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IXYS Corporation IXFE36N100 MOSFET N-CH 1000V 33A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFE36N100	Tube			10	1 - 10 $33.288 100 $33.288 1000 $33.288 10000 $33.288	Buy Now
Mouser Electronics	IXFE36N100					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXFN36N100 MOSFET N-CH 1KV 36A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN36N100	Tube			300	1 - 10 - 100 - 1000 $54.17763 10000 $54.17763	Buy Now
Newark	IXFN36N100	Bulk			300	1 - 10 - 100 - 1000 $74.12 10000 $74.12	Buy Now
RS	IXFN36N100	Bulk		8 Weeks	10	1 - 10 $83.79 100 $83.79 1000 $83.79 10000 $83.79	Get Quote
IXYS Corporation IXFN36N100 MOSFET Modules 1KV 36A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFN36N100					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Bristol Electronics	IXFN36N100		4			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	IXFN36N100	Tube			300	1 - 10 - 100 - 1000 $54.19 10000 $54.19	Buy Now
TME	IXFN36N100		20		1	1 $90.1 10 $71.5 100 $71.5 1000 $71.5 10000 $71.5	Buy Now
Lighting Components & Design Inc 36N-1000
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	36N-1000		68			1 $31.34 10 $14.91 100 $7.13 1000 $7.13 10000 $7.13	Buy Now
Master Electronics	36N-1000		68			1 $31.34 10 $14.91 100 $7.13 1000 $7.13 10000 $7.13	Buy Now

36N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 36N100 VDSS ID25 RDS on = 1000 V = 36 A = 0.24 W D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	36N100 100kHz 125OC	PDF
ixfn 36 n 50 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 36N100 VDSS ID25 RDS on = 1000 V = 36 A = 0.24 W D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C	Original	36N100 100kHz 125OC ixfn 36 n 50	PDF
BT 1496 Abstract: wy 409 Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 36N100 S Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC= 25°C, Chip capability	Original	36N100 Figure10. BT 1496 wy 409	PDF
36N100 Abstract: 34n100 ixfn36n100 IXFE34N100 IXFE36N100 NS455 Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.24 Ω 0.28 Ω IXFE 36N100 1000 V 33 A IXFE 34N100 1000 V 30 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	36N100 34N100 227TM IXFN36N100 IXFE36N100: IXFE34N100: 728B1 IXFE34N100 IXFE36N100 NS455	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 36N100 VDSS ID25 RDS on = 1000V = 36A Ω = 0.24Ω D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings V DSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	36N100 OT-227 E153432 IXFN36N100 728B1 123B1 728B1 065B1	PDF
IXFN36N100 Abstract: 36N100 125OC ixfn 36n100 IXYS 36N100 Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 36N100 VDSS ID25 RDS on = 1000V = 36A Ω = 0.24Ω D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings V DSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	36N100 OT-227 E153432 IXFN36N100 728B1 123B1 728B1 065B1 IXFN36N100 36N100 125OC ixfn 36n100 IXYS 36N100	PDF
36N100 Abstract: IXFE36N100 IXFE34N100 Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.24 Ω 0.28 Ω IXFE 36N100 1000 V 33 A IXFE 34N100 1000 V 30 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 227TM (IXFE) S VDSS VDGR TJ = 25°C to 150°C	Original	36N100 34N100 34N100 IXFN36N100 IXFE36N100: IXFE36N100 IXFE34N100	PDF
36N100 Abstract: IXFN36N100 IXFE34N100 IXFE36N100 34N100 Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.24 Ω 0.28 Ω IXFE 36N100 1000 V 33 A IXFE 34N100 1000 V 30 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	36N100 34N100 227TM IXFN36N100 IXFE36N100: IXFE34N100: 728B1 123B1 728B1 065B1 IXFE34N100 IXFE36N100	PDF
125OC Abstract: 98520C Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 36N100 VDSS ID25 RDS on = 1000V = 36A Ω = 0.24Ω D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	36N100 OT-227 E153432 125OC 125OC 98520C	PDF
065B1 Abstract: ixfn36n100 fast diode SOT-227 "SOT-227 B" dimensions tc 144 e 125OC Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 36N100 VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	36N100 OT-227 E153432 IXFN36N100 728B1 123B1 728B1 065B1 ixfn36n100 fast diode SOT-227 "SOT-227 B" dimensions tc 144 e 125OC	PDF
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158	PDF
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF

Untitled Abstract: No abstract text available Text: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 36N100 1000V 36A 0.24Q V,DSS ^D25 R,DS on N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test Conditions v DSS Td = 25°C to 150°C	OCR Scan	36N100	PDF
IXYS CS 30-12 Abstract: 36N100 Text: IXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 36N100 1000 V 36 A 0.24 Q VDSS I D25 R DS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions v DSS	OCR Scan	36N100 to150 OT-227 IXYS CS 30-12 36N100	PDF
52N30 Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50 Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70	OCR Scan	76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50	PDF
C1218 Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10 Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268	OCR Scan	67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10	PDF
DSE 130 -06A Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01	OCR Scan	AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50	PDF

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36N100 Search Results

36N100 Price and Stock

IXYS Corporation IXFE36N100

Littelfuse Inc IXFN36N100

IXYS Corporation IXFN36N100

Lighting Components & Design Inc 36N-1000

36N100 Datasheets Context Search

Untitled

ixfn 36 n 50

BT 1496

36N100

Untitled

IXFN36N100

36N100

36N100

125OC

065B1

C1162

sd 20n60

7n60b

7N60B equivalent

Untitled

IXYS CS 30-12

52N30

C1218

DSE 130 -06A