PIC18F4680
Abstract: HANDBOOK bosch servo module SM 25/50 bosch servo module SM 25/50 bosch servo module SM 10/20 tm 2585 PIC18F2585 PIC18F2680 PIC18F4585 PIC16F877 example code on internal oscillator cmos logic 4000 series
Text: PIC18F2585/2680/4585/4680 Data Sheet 28/40/44-Pin Enhanced Flash Microcontrollers with ECAN Technology, 10-Bit A/D and nanoWatt Technology 2004 Microchip Technology Inc. Preliminary DS39625B Note the following details of the code protection feature on Microchip devices:
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PIC18F2585/2680/4585/4680
28/40/44-Pin
10-Bit
DS39625B
pr-558-5932
D-85737
NL-5152
DS39625B-page
PIC18F4680
HANDBOOK bosch servo module SM 25/50
bosch servo module SM 25/50
bosch servo module SM 10/20
tm 2585
PIC18F2585
PIC18F2680
PIC18F4585
PIC16F877 example code on internal oscillator
cmos logic 4000 series
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PIC18F2585
Abstract: PIC18F2680 PIC18F4585 PIC18F4680 PIC18F2X8X DS39625
Text: PIC18F2585/2680/4585/4680 Data Sheet 28/40/44-Pin Enhanced Flash Microcontrollers with ECAN Technology, 10-Bit A/D and nanoWatt Technology 2007 Microchip Technology Inc. Preliminary DS39625C Note the following details of the code protection feature on Microchip devices:
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PIC18F2585/2680/4585/4680
28/40/44-Pin
10-Bit
DS39625C
DS39625C-page
PIC18F2585
PIC18F2680
PIC18F4585
PIC18F4680
PIC18F2X8X
DS39625
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PIC18F2585
Abstract: PIC18F2680 PIC18F4585 PIC18F4680 DS39625C CCP1 module PGC 3100
Text: PIC18F2585/2680/4585/4680 Data Sheet 28/40/44-Pin Enhanced Flash Microcontrollers with ECAN Technology, 10-Bit A/D and nanoWatt Technology 2007 Microchip Technology Inc. Preliminary DS39625C Note the following details of the code protection feature on Microchip devices:
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PIC18F2585/2680/4585/4680
28/40/44-Pin
10-Bit
DS39625C
p28-8665-7889
-16oh
PIC18F2585
PIC18F2680
PIC18F4585
PIC18F4680
DS39625C
CCP1 module
PGC 3100
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E78H
Abstract: PIC18FX680 PIC18F2585 PIC18F2680 PIC18F4585 PIC18F4680 lcd inverter 14pin 3 digit 7 segment display 18pin
Text: PIC18F2585/2680/4585/4680 Data Sheet 28/40/44-Pin Enhanced Flash Microcontrollers with ECAN Technology, 10-Bit A/D and nanoWatt Technology 2004 Microchip Technology Inc. Preliminary DS39625B Note the following details of the code protection feature on Microchip devices:
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PIC18F2585/2680/4585/4680
28/40/44-Pin
10-Bit
DS39625B
pr-558-5932
D-85737
NL-5152
DS39625B-page
E78H
PIC18FX680
PIC18F2585
PIC18F2680
PIC18F4585
PIC18F4680
lcd inverter 14pin
3 digit 7 segment display 18pin
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SAFEA2G5
Abstract: murata SAW
Text: SAW FILTER FOR WiMAX 2.5G Murata part number : SAFEA2G56FA0F00 Package Dimensions Specification Specification Item -30 to 85°C Nominal Center Frequency(fc) 25±2°C typ. 2560MHz 1.35±0.05 1.05±0.05 Insertion Loss (2500 to 2620MHz) Dot Marking(φ0.3) X L
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SAFEA2G56FA0F00
2560MHz
2620MHz)
SAFEA2G5
murata SAW
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murata SAW
Abstract: C 2640
Text: SAW FILTER FOR WiMAX 2.5G Murata part number : SAFEA2G56FA0F00 Package Dimensions Specification Specification Item -30 to 85°C Nominal Center Frequency(fc) 25±2°C typ. 2560MHz 1.35±0.05 1.05±0.05 Insertion Loss (2500 to 2620MHz) Dot Marking(0.3)
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SAFEA2G56FA0F00
2560MHz
2620MHz)
murata SAW
C 2640
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LM7805
Abstract: No abstract text available
Text: PTFA261301E Thermally-Enhanced High Power RF LDMOS FET 130 W, 2.62 – 2.68 GHz PTFA261301E Package 30260 Description The PTFA261301E is a thermally-enhanced 130-watt, internally-matched GOLDMOS FET intended for ultra-linear applications. It is characterized
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PTFA261301E
PTFA261301E
130-watt,
CDMA2000
LM7805
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ALT230
Abstract: No abstract text available
Text: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA and CDMA2000 operation
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PTFA261301E
PTFA261301F
130-watt,
CDMA2000
ALT230
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elna 50v
Abstract: No abstract text available
Text: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G
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PTFA261301E
PTFA261301F
130-watt,
CDMA2000,
H-30260-2
H-31260-2
elna 50v
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Untitled
Abstract: No abstract text available
Text: PTFA261301E Thermally-Enhanced High Power RF LDMOS FET 130 W, 2.62 – 2.68 GHz PTFA261301E Package 30260 Description The PTFA261301E is a thermally-enhanced 130-watt, internally-matched GOLDMOS FET intended for ultra-linear applications. It is characterized
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PTFA261301E
PTFA261301E
130-watt,
CDMA2000
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BCP56
Abstract: LM7805 PTFA261301E PTFA261301F IM325 130-watt PD449 2680 marking
Text: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G
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PTFA261301E
PTFA261301F
PTFA261301E
PTFA261301F
130-watt,
CDMA2000,
H-30260-2
H-31260-2
BCP56
LM7805
IM325
130-watt
PD449
2680 marking
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k 2679
Abstract: PTFA260451E BCP56 LM7805 INFINEON PHILIPS
Text: PTFA260451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62 – 2.68 GHz Description The PTFA260451E is a thermally-enhanced 45-watt, internallymatched GOLDMOS FET intended for CDMA2000, Super3G 3GPP TSG RAN , and WiMAX applications from 2.62 to 2.68 GHz. Thermallyenhanced packaging provide the coolest operation available. Full
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PTFA260451E
PTFA260451E
45-watt,
CDMA2000,
CDMA2000
k 2679
BCP56
LM7805
INFINEON PHILIPS
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Untitled
Abstract: No abstract text available
Text: PTFA260451E PTFA260451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2.62 – 2.68 GHz Description The PTFA260451E and PTFA260451F are thermally-enhanced 45-watt, internally matched GOLDMOS FETs intended for CDMA2000 applications from 2.62 to 2.68 GHz. Thermally-enhanced
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PTFA260451E
PTFA260451F
45-watt,
CDMA2000
PTFA260451F*
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Untitled
Abstract: No abstract text available
Text: PTFA260451E PTFA260451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2.62 – 2.68 GHz Description The PTFA260451E and PTFA260451F are thermally-enhanced 45-watt, internally matched GOLDMOS FETs intended for CDMA2000, Super3G 3GPP TSG RAN , and WiMAX applications
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PTFA260451E
PTFA260451F
45-watt,
CDMA2000,
H-30265-2
PTFA260451F*
H-31265-2
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l35 CAPacitor
Abstract: 1800 ldmos marking l33 BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor ATC Semiconductor Devices
Text: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features
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PTFA261702E
PTFA261702E
170-watt
l35 CAPacitor
1800 ldmos
marking l33
BCP56
LM7805
RO4350
L42 marking transistor
ATC Semiconductor Devices
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PTF240101S
Abstract: LM7805
Text: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA 2000 applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF240101S
PTF240101S
10-watt,
LM7805
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Untitled
Abstract: No abstract text available
Text: R.47 X2 CLASS IEC 60384-14 - MKP Series metallized polyPROPYLENE film capacitor SELF-HEALING PROPERTIES Taped Loose Fig.1 Fig.2 Typical applications: interference suppression and «across-the-line» applications. Suitable for use in situations where failure of the capacitor would not lead to danger of
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R475N
R475W
500mm
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E97797
Abstract: R475I IEC 60384-14 1414 MKP x2 pF8200 R475W
Text: R.47 X2 CLASS IEC 60384-14 - MKP Series Loose metallized polyPROPYLENE film capacitor SELF-HEALING PROPERTIES Taped Fig.1 Fig.2 Typical applications: interference suppression and «across-the-line» applications. Suitable for use in situations where failure of the capacitor would not lead to danger of
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R475R
R475W
E97797
R475I
IEC 60384-14 1414 MKP x2
pF8200
R475W
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pF8200
Abstract: IEC 60384-14 1414 MKP x2 E97797 E85238 R474R
Text: R.47 X2 CLASS IEC 60384-14 - MKP Series Loose METALLIZED POLYPROPYLENE FILM CAPACITOR SELF-HEALING PROPERTIES Taped Fig.1 Fig.2 Typical applications: interference suppression and «across-the-line» applications. Suitable for use in situations where failure of the capacitor would not lead to danger of
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E97797
E85238
500mm
pF8200
IEC 60384-14 1414 MKP x2
E97797
E85238
R474R
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R474
Abstract: R474I capacitor MKP X1 440VAC x mkp capacitor 440Vac R475N R474N iec 60384-14 E97797 R475W R475F
Text: R.47 X2 CLASS IEC 60384-14 - MKP Series metallized polyPROPYLENE film capacitor SELF-HEALING PROPERTIES Taped Loose Fig.1 Fig.2 Typical applications: interference suppression and «across-the-line» applications. Suitable for use in situations where failure of the capacitor would not lead to danger of
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500mm
R474
R474I
capacitor MKP X1 440VAC
x mkp capacitor 440Vac
R475N
R474N
iec 60384-14
E97797
R475W
R475F
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PDF
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Application Notes on LM7805
Abstract: lm7805 lm7805 p PCC104BCTND PCC104bct-nd ATC 4r7 capacitor 100b LM7805 05 PTF240101S BCP56 ceramic capacitor 47 pf
Text: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF240101S
PTF240101S
10-watt,
CDMA2000
Application Notes on LM7805
lm7805
lm7805 p
PCC104BCTND
PCC104bct-nd
ATC 4r7 capacitor 100b
LM7805 05
BCP56
ceramic capacitor 47 pf
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LM7805
Abstract: PCC104BCTND PCC104bct-nd H-32259-2 rf transistor 2.5GHz 240101S
Text: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF240101S
PTF240101S
10-watt,
CDMA2000
H-32259-2
LM7805
PCC104BCTND
PCC104bct-nd
H-32259-2
rf transistor 2.5GHz
240101S
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Untitled
Abstract: No abstract text available
Text: LED HIGH POWER M03 Product Series LED HIGH POWER M03 CoB Product Series Data Sheet Created Date: 09 / 18 / 2013 Revision: 5.0, 12 / 10 / 2013 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008 LED HIGH POWER M03 Product Series 1. Description
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BNC-OD-C131/A4
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Untitled
Abstract: No abstract text available
Text: LED HIGH POWER M03 Product Series LED HIGH POWER M03 CoB Product Series Data Sheet Created Date: 09 / 18 / 2013 Revision: 7.0, 04 / 01 / 2014 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008 LED HIGH POWER M03 Product Series 1. Description
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BNC-OD-C131/A4
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