TDA1308
Abstract: TDA1308T TDA1545A IEC134 dip 4814 MBC-18 TDA1308 application notes
Text: Philips Semiconductors Product specification Class AB stereo headphone driver TDA1308 FEATURES GENERAL DESCRIPTION • Wide temperature range The TDA1308 is an integrated class AB stereo headphone driver contained in an SO8 or a DIP8 plastic package. The device is fabricated in a 1 mm CMOS process and has
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TDA1308
TDA1308
SCD34
TDA1308T
TDA1545A
IEC134
dip 4814
MBC-18
TDA1308 application notes
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CEM9953A
Abstract: No abstract text available
Text: CEM9953A Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -30V, -3.5A, RDS ON = 80mΩ @VGS = -10V. RDS(ON) = 130mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
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CEM9953A
CEM9953A
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TPP25011
Abstract: ST microelectronics diodes 129
Text: TPP25011 Application Specific Discretes A.S.D. OVERVOLTAGE and OVERCURRENT PROTECTION for TELECOM LINE FEATURES • ■ ■ ■ UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 250 V PROGRAMMABLE CURRENT LIMITATION FROM 40 mA TO 500 mA SURGE CURRENT CAPABILITY
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TPP25011
TPP25011
ST microelectronics diodes 129
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TPP25011
Abstract: No abstract text available
Text: TPP25011 Application Specific Discretes A.S.D. OVERVOLTAGE and OVERCURRENT PROTECTION for TELECOM LINE FEATURES • ■ ■ ■ UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 250 V PROGRAMMABLE CURRENT LIMITATION FROM 40 mA TO 500 mA SURGE CURRENT CAPABILITY
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TPP25011
TPP25011
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TPP25011
Abstract: 220V 30A Relay
Text: TPP25011 Application Specific Discretes A.S.D. OVERVOLTAGE and OVERCURRENT PROTECTION for TELECOM LINE FEATURES • ■ ■ ■ UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 250 V PROGRAMMABLE CURRENT LIMITATION FROM 40 mA TO 500 mA SURGE CURRENT CAPABILITY
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TPP25011
TPP25011
220V 30A Relay
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marking code sgs
Abstract: TPP25011 MARKING SO8
Text: TPP25011 Application Specific Discretes A.S.D. OVERVOLTAGE and OVERCURRENT PROTECTION for TELECOM LINE FEATURES UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 250 V PROGRAMMABLE CURRENT LIMITATION FROM 40 mA TO 500 mA SURGE CURRENT CAPABILITY
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TPP25011
marking code sgs
TPP25011
MARKING SO8
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MOSFET 4604
Abstract: 4604 mosfet
Text: LF PA K 56 BUK9Y15-100E N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9Y15-100E
LFPAK56
MOSFET 4604
4604 mosfet
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK9Y107-80E N-channel 80 V, 107 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9Y107-80E
LFPAK56
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TDA1310A
Abstract: TDA1310AT BP317
Text: Philips Semiconductors Preliminary specification Stereo Continuous Calibration DAC CC-DAC TDA1310A FEATURES GENERAL DESCRIPTION • Space saving package DIL8 or SO8 The TDA1310A is a device of a new generation of Digital-to-Analog Converters (DACs) which embodies the
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TDA1310A
TDA1310A
16-bit
SCD31
513061/1500/02/pp16
TDA1310AT
BP317
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I740
Abstract: IRU1150 IRU1150CM IRU1150CP IRU1150CS
Text: IRU1150 4A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR PRELIMINARY DATASHEET DESCRIPTION FEATURES The IRU1150 is a 4A regulator with extremely low dropout voltage using a proprietary bipolar process that achieves comparable equivalent on-resistance to that of
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IRU1150
IRU1150
O-263
I740
IRU1150CM
IRU1150CP
IRU1150CS
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Untitled
Abstract: No abstract text available
Text: FDS2672 N-Channel UltraFET Trench MOSFET tm 200V, 3.9A, 70mΩ Features General Description ̈ Max rDS on = 70mΩ at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize
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150V n-channel MOSFET
Abstract: FDS2672
Text: FDS2672 N-Channel UltraFET Trench MOSFET tm 200V, 3.9A, 70mΩ Features General Description Max rDS on = 70mΩ at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize
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FDS2672
150V n-channel MOSFET
FDS2672
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Untitled
Abstract: No abstract text available
Text: LM185/LM285/LM385 Adjustable Micropower Voltage References General Description The LM185/LM285/LM385 are micropower 3-terminal adjustable band-gap voltage reference diodes. Operating from 1.24 to 5.3V and over a 10µA to 20mA current range, they feature exceptionally low dynamic impedance and good temperature stability. On-chip trimming is used to provide tight
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LM185/LM285/LM385
LM185
LM185BYH/883
LM185BYH/Q
LM185BH/Q
9091401MXA
LM185B
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Untitled
Abstract: No abstract text available
Text: FDS2672_F085 N-Channel UltraFET Trench MOSFET tm 200V, 3.9A, 70mΩ Features General Description ̈ Max rDS on = 70mΩ at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize
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Amplifier thermocouple op177
Abstract: OP177 OP177FP OP177FS OP177GP OP177GS OP41 REF01 OP-177G OP177G
Text: a Ultraprecision Operational Amplifier OP177 PIN CONNECTIONS Epoxy Mini-DIP P Suffix 8-Pin SO (S-Suffix) FEATURES Ultralow Offset Voltage: TA = 25؇C: 25 V Max Outstanding Offset Voltage Drift: 0.1 V/؇C Max Excellent Open-Loop Gain and Gain Linearity:
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OP177
OP07/OP77)
OP177
C00289-0-2/02
Amplifier thermocouple op177
OP177FP
OP177FS
OP177GP
OP177GS
OP41
REF01
OP-177G
OP177G
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PCA1534P
Abstract: PCA1534 martin
Text: INTEGRATED CIRCUITS DATA SHEET PCA153X series 32 kHz clock circuit Product specification Supersedes data of October 1988 File under Integrated Circuits, IC16 Philips Semiconductors January 1994 Philips Semiconductors Product specification 32 kHz clock circuit
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PCA153X
PCA1532P
PCA1534P
PCA1532T
PCA1534T
PCA1532U/10
PCA1534U/10
SCD26
PCA1534
martin
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TDA1308 application notes
Abstract: A 2531 0601 tda1308 IEC134 TDA1308T TDA1545A 35VRL
Text: INTEGRATED CIRCUITS DATA SHEET TDA1308 Class AB stereo headphone driver Product specification File under Integrated Circuits, IC01 Philips Semiconductors August 1994 Philips Semiconductors Product specification Class AB stereo headphone driver TDA1308 FEATURES
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TDA1308
TDA1308
SCD34
TDA1308 application notes
A 2531 0601
IEC134
TDA1308T
TDA1545A
35VRL
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BP317
Abstract: MS-012AA TDA8011T
Text: INTEGRATED CIRCUITS DATA SHEET TDA8011T IF amplifier for satellite TV receivers Product specification File under Integrated Circuits, IC02 Philips Semiconductors February 1995 Philips Semiconductors Product specification IF amplifier for satellite TV receivers
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TDA8011T
TDA8011T
SCD36
533061/1500/01/pp12
BP317
MS-012AA
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pin diode gamma detector
Abstract: Tuning Varactors UHF schottky diode GaAs p-i-n diodes RF limiter PIN diode impatt diode IMPATT 10 GHz gunn diode 6 GHz PIN diode Microwave zero bias detector diodes
Text: TABLE OF CONTENTS SURFACE MOUNT PRODUCTS PIN DIODES IN SMQ SQUARE SURFACE MOUNT DIVERSITY SWITCHES DC-2 GHz HIGH POWER (4 PACKAGES . 6
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OT-23
OT-23
OT-143
MA4T6365XX
pin diode gamma detector
Tuning Varactors
UHF schottky diode
GaAs p-i-n diodes
RF limiter PIN diode
impatt diode
IMPATT
10 GHz gunn diode
6 GHz PIN diode
Microwave zero bias detector diodes
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FDS6912A
Abstract: No abstract text available
Text: FAIRCHILD June 1998 S E M I C D N D U C T O R tm FDS6912A Dual N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level M O S F E T s are produced using Fairchild Semiconductor's advanced PowerTrench process that has been
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FDS6912A
FDS6912A
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PNP transistor 269
Abstract: LM393 LM2903T lm293t LM393ANN LM393 motorola
Text: M M O T O R O LA Low Offset Voltage Dual Comparators The LM393 series are dual independent precision voltage comparators capable of single or split supply operation. These devices are designed to permit a common mode range-to-ground level with single supply operation.
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LM393,
LM393A,
LM293,
LM2903,
LM2903V
LM393
PNP transistor 269
LM2903T
lm293t
LM393ANN
LM393 motorola
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Untitled
Abstract: No abstract text available
Text: ALPHA SEMICONDUCTOR AS2955 Excellence in Analog Power Products 350mA Low Drop Out Voltage Regulator Advanced Information - Production 2Q ‘97 FEATURES APPLICATI • • • • • • • • • • • Battery • CordU Output Accuracy 5V, 350mA Output
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AS2955
350mA
400mV.
160mA
AS2955
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IC TB 1237 AN
Abstract: No abstract text available
Text: f Z 7 7# ^ S C S -T H O M S O N [Œ O T @ *S S EF73321 PCM LINE TRANSCEIVER . • . ■ NMOS TECHNOLOGY OPERATES FROM + 5 V SUPPLY DIGITAL TECHNO LO G Y THROUGHOUT EXTRACTS DISTANT CLO CK TRANSM ITTED BY A PCM TRUNK ■ CAN HANDLE PEAK TO PEAK JITTER AM PLI
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EF73321
DIP-20
DIP-24
DIP-28
MULTIWATT-15
7T2T23?
FLEXIWATT-15
IC TB 1237 AN
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EF73321C
Abstract: HDB3 EF73321 HL 941 EF73321P EF7333 PLCC20 PLCC-28 PLCC44
Text: f Z ^ 7 7 # S C S -T H O M S O N [Œ O T @ *S S EF73321 PCM LINE TRANSCEIVER . • . ■ NMOS TECHNOLOGY OPERATES FROM + 5 V SUPPLY DIGITAL TECHNO LO G Y THROUGHOUT EXTRACTS DISTANT CLO CK TRANSM ITTED BY A PCM TRUNK ■ CAN HANDLE PEAK TO PEAK JITTER AM PLI
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EF73321
EF73321
DIP16
DIP-24
DIP-28
MULTIWATT-15
7TST23?
19lo26
FLEXIWATT-15
EF73321C
HDB3
HL 941
EF73321P
EF7333
PLCC20
PLCC-28
PLCC44
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