Untitled
Abstract: No abstract text available
Text: PGG203-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power50m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.3.0 V(Oper.) Nom.(V) Oper. Voltage80 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew
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PGG203-83
Power50m
Voltage80
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Untitled
Abstract: No abstract text available
Text: 5082-0435 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power100m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12G Efficiency Min.3.5 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT
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Power100m
Voltage90
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Untitled
Abstract: No abstract text available
Text: PGG205-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew
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PGG205-83
Power200m
Voltage90
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Untitled
Abstract: No abstract text available
Text: RT8121 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power1.0 Frequency Min. (Hz)12G Frequency Max. (Hz) Efficiency Min.18 V(Oper.) Nom.(V) Oper. Voltage40 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePin Mounting StyleS
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RT8121
Voltage40
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Untitled
Abstract: No abstract text available
Text: RT8701-2 Diodes Pulse-Mode IMPATT Diode P o Min.(W) Output Power7.0 Frequency Min. (Hz)6.0G Frequency Max. (Hz)8.0G Efficiency Min.14 V(Oper.) Nom.(V) Oper. Voltage55 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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RT8701-2
Voltage55
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RT8601-2
Abstract: No abstract text available
Text: RT8601-2 Diodes Pulse-Mode IMPATT Diode P o Min.(W) Output Power7.0 Frequency Min. (Hz)5.0G Frequency Max. (Hz)7.0G Efficiency Min.14 V(Oper.) Nom.(V) Oper. Voltage60 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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RT8601-2
Voltage60
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Untitled
Abstract: No abstract text available
Text: ND8J80W1T Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power.15 Frequency Min. (Hz)70G Frequency Max. (Hz)87G Efficiency Min.4.5 V(Oper.) Nom.(V) Oper. Voltage16 I(Oper.) Typ.(A) Oper. Current160m Semiconductor MaterialSilicon Package StyleScrew
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ND8J80W1T
Voltage16
Current160m
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Untitled
Abstract: No abstract text available
Text: VAO32EN22 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)6.0G Frequency Max. (Hz)8.0G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage110 I(Oper.) Typ.(A) Oper. Current33m Semiconductor MaterialSilicon Package StylePill-C
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VAO32EN22
Power200m
Voltage110
Current33m
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Untitled
Abstract: No abstract text available
Text: VSX9251S1 Diodes Pulse-Mode IMPATT Diode P o Min.(W) Output Power17 Frequency Min. (Hz)8G Frequency Max. (Hz)10G Efficiency Min.19 V(Oper.) Nom.(V) Oper. Voltage60 I(Oper.) Typ.(A) Oper. Current1.5 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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VSX9251S1
Power17
Voltage60
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impatt diode
Abstract: impatt diode operation impatt diode datasheet impatt impatt diode W band ELVA-1 IC-02K IC-02U IC-015W IM-10PK
Text: IMPATT Diodes and Test Fixtures Golden contact 0.4 0.15 IMPATT Ruby box Copper Heat Sink with gold covering A • 25-155 GHz frequency range • Pulse and CW version • 20W pulse, 200 mW CW operation • Delivery from stock • Low cost A=5.6 mm, B=3.0 mm for Ka – Band
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110VAC,
220VAC,
impatt diode
impatt diode operation
impatt diode datasheet
impatt
impatt diode W band
ELVA-1
IC-02K
IC-02U
IC-015W
IM-10PK
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Untitled
Abstract: No abstract text available
Text: MS856B Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)15G Frequency Max. (Hz)18G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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MS856B
Power200m
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Untitled
Abstract: No abstract text available
Text: RT8101-2 Diodes Pulse-Mode IMPATT Diode P o Min.(W) Output Power7.0 Frequency Min. (Hz)10G Frequency Max. (Hz)12G Efficiency Min.14 V(Oper.) Nom.(V) Oper. Voltage45 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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RT8101-2
Voltage45
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Untitled
Abstract: No abstract text available
Text: VAO12CN21 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power50m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.3.0 V(Oper.) Nom.(V) Oper. Voltage70 I(Oper.) Typ.(A) Oper. Current25m Semiconductor MaterialSilicon Package StylePill-C
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VAO12CN21
Power50m
Voltage70
Current25m
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Untitled
Abstract: No abstract text available
Text: PGG205-82 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew
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PGG205-82
Power200m
Voltage90
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Untitled
Abstract: No abstract text available
Text: VAO12EN21 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage80 I(Oper.) Typ.(A) Oper. Current45m Semiconductor MaterialSilicon Package StylePill-C
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VAO12EN21
Power200m
Voltage80
Current45m
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Untitled
Abstract: No abstract text available
Text: GaAs IMPATT DIODES TM MI5001 – MI5022 Features Specified High Output Power High DC to Microwave Efficiency For Pulsed and CW Applications Applications Oscillators Avionic Systems Electronic Warfare Systems Smart Antennas Description Microsemi’s GaAs IMPATT diodes are fabricated utilizing
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MI5001
MI5022
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Untitled
Abstract: No abstract text available
Text: 4613303 HUGHES, 95D MICROWAVE PRDTS 00486 D T -* 7 -// SECTION MILLIMETER-WAVE DIODES IMPATT Diodes and Test Fixtures TS DE | 4L13303 □□□04flb 4 3 Hughes 4710xH series IMPATT diodes are silicon double '• - drift diodes mounted in hermetically sealed packages and :
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4L13303
04flb
4710xH
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impatt diode
Abstract: apc-7 connector impatt impatt diode operation radar impatt CW doppler radar Silicon drift diode hp 0611 diode GG 14
Text: H E W L E T T PACKARD COMPONENTS DIODES HIGH POWER, HIGH EFFICIENCY SILICON DOUBLE DRIFT IMPATT DIODES FOR CW POWER SOURCES 10-14 GHZ Features AND STEP RECOVERY HIGH POWER O U TP U T Typically: 2.5W from 10 to 14 GHz HIGH EFFICIENCY LOW NOISE HIGH A M B IEN T O PERATIO N
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MIL-S-19500
impatt diode
apc-7 connector
impatt
impatt diode operation
radar impatt
CW doppler radar
Silicon drift diode
hp 0611
diode GG 14
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impatt diode
Abstract: impatt diode operation IMPATT GaAs impatt diode
Text: M/A-COM SEMICONDUCTOR M/A-COM SEMICONDUCTOR PRODUCTS OPERATION GaAs IMPATT DIODE SELECTION GUIDE PRODUCTS OPERATION Frequency Range GHz Case Style ODS # 0.5 CW IMPATTS PULSED IMPATT DIODES Minimum CW Output Power in Watts Min. Peak Pulse Power In Watts 1.0
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ODS-275
ODS-111
ODS-92
ODS-940
impatt diode
impatt diode operation
IMPATT
GaAs impatt diode
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IMPATT
Abstract: No abstract text available
Text: IMPATT Diodes SELECTION GUIDE MODEL NUMBER PAGE MODEL NUMBER MA46019 MA46020 MA46021 MA46022 MA46023 MA46024 MA46025 MA46026 MA46027 MA46028 MA46029 MA46030 MA46031 MA46032 MA46033 . 10-5 ! 0-5 . 10-9
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MA46019
MA46020
MA46021
MA46022
MA46023
MA46024
MA46025
MA46026
MA46027
MA46028
IMPATT
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Diode LT 9250
Abstract: LT 9250 0/Diode LT 9250
Text: LITTON IND/LITTON SOLI» SbE D • SSMMSDG OODDSOG Ö31 ■ L I T T 7 - Ö / - Ö GALLIUM ARSENIDE CW IMPATT DIODES 9250 Series • • • • 5-21 GHz High C W Output Power High Efficiency— Typically 1 8 -2 0 % Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF
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-3-48UNC-2A
Diode LT 9250
LT 9250
0/Diode LT 9250
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AH720
Abstract: w4 DIODE impatt AH751 impatt diode
Text: AH720.AH741/AH750.AH771 G aAs IMPATT P O W E R G E N E R A T I O N D I O D E S FEATURES O perating fre que ncy range : 10, 14, 16G H z C ase style: W 4 E m itting p o w e r : 2 to 5W atts A P PL IC A TI O N S T h e IM P A T T d io d e s are s u ita b le fo r u s e as
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AH720.
AH741/AH750.
AH771
AH741
/AH750.
AH720
w4 DIODE
impatt
AH751
impatt diode
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MA460
Abstract: APC7 connector impatt diode a4602 A4604 IMPATT impatt diode operation
Text: jyfocôYi MA46021-MA46049 Series CW Gallium Arsenide IMPATT Diodes 0.5-4 Watts C,X, and Ku-Band Features • DIRECT CONVERSION FOR DC TO RF WITH >15% EFFICIENCY LOW-HIGH-LOW ■ DIRECT CONVERSION FOR DC TO RF WITH > 10% EFFICIENCY (FLAT PROFILE) ■ LOW AM AND FM NOISE
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MA46021-MA46049
MA46030,
MA460
APC7 connector
impatt diode
a4602
A4604
IMPATT
impatt diode operation
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impatt diode
Abstract: impatt diode operation AN961 5082-0710 IMPATT
Text: 5082-0710 X-BAND 5082-0716 Ku-BAIMD SILICON DOUBLE DRIFT IMPATT DIODES FOR PULSED POWER SOURCES H E W L E T T ^ PACKARD COMPONENTS Features HIGH PEAK POWER Typically Greater Than 14W Peak at 10 GHz, and 11W Peak at 16 GHz HIGH AVERAGE POWER 25% Duty Cycle at Peak Power Rating
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PDF
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MIL-S-19500
impatt diode
impatt diode operation
AN961
5082-0710
IMPATT
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