Untitled
Abstract: No abstract text available
Text: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D1360Q IBM11D2360Q IBM11E1360Q IBM11E2360Q 1M/2M x 36 DRAM Module Features • Single 5V, ± 0.5V Power Supply • All inputs & outputs are fully TTL & CMOS compatible • Low active current dissipation
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Original
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IBM11D2360ED2M
QC10/10,
IBM11E2360ED2M
IBM11D1360Q
IBM11D2360Q
IBM11E1360Q
IBM11E2360Q
72-Pin
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PDF
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1829pf
Abstract: No abstract text available
Text: IBM11D1360Q1M 10/10, 5.0V, Sn/PbMMDS25DSU-001023221. x 36 QC10/10, 5.0V, Sn/PbMMDS25DSU-001023221. IBM11E1360Q1M x 36 QC10/10, IBM11E2360Q2M 5.0V, Au MMDS25DSU-001023221. x 36 QC10/10, 5.0V, Au MMDS25DSU-001023221. IBM11D2360Q2M x 36 QC IBM11D1360Q IBM11D2360Q
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Original
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Sn/PbMMDS25DSU-001023221.
IBM11E1360Q1M
QC10/10,
MMDS25DSU-001023221.
IBM11D1360Q1M
IBM11E2360Q2M
1829pf
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11D1360Q IBM11E1360Q IBM11D2360Q IBM11E2360Q 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 : W c ; RAS Access Time 60ns 70ns I tcAC i CAS Access Time 15ns 20ns 30ns 35ns j Iaa !Access Time From Address
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OCR Scan
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IBM11D1360Q
IBM11E1360Q
IBM11D2360Q
IBM11E2360Q
72-Pin
110ns
130ns
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PDF
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 D 1 3 6 0 Q IB M 1 1 E 1 3 6 0 Q IB M 1 1 D 2 3 6 0 Q IB M 1 1 E 2 3 6 0 Q 1M/2M x 36 DRAM Module Features All inputs & outputs are fully TTL & CMOS compatible Low active current dissipation Fast Page Mode access cycle Refresh Modes: RAS-Only, CBR, and Hidden
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OCR Scan
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72-Pin
110nsd
IBM11D2360Q
IBM11E2360Q
IBM11D1360Q
IBM11E1360Q
26H2703
26H2704)
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PDF
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