IGCT thyristor ABB
Abstract: No abstract text available
Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 2200 18.8 1.65 0.6 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4503 mΩ Ω V Doc. No. 5SYA1230-01 Sep. 01 • Direct fiber optic controll and status • Fast response tdon < 3 µs, tdoff < 6 µs
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26L4503
5SYA1230-01
26L4503
CH-5600
IGCT thyristor ABB
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IGCT thyristor ABB
Abstract: igct abb gct thyristor HFBR-1528 HFBR-2528 IGCT thyristor current max
Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 2200 18.8 1.65 0.6 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4503 mΩ Ω V Doc. No. 5SYA1230-01 Feb. 02 • Direct fiber optic controll and status • Fast response tdon < 3 µs, tdoff < 6 µs
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26L4503
5SYA1230-01
i1230-01
CH-5600
IGCT thyristor ABB
igct abb
gct thyristor
HFBR-1528
HFBR-2528
IGCT thyristor current max
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CS213
Abstract: 26L4503
Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 2200 18.8 1.65 0.6 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4503 Doc. No. 5SYA 1230-01 Aug. 2000 • Direct fiber optic controll and status • Fast response ∆tdon < 3 µs, tdoff < 6 µs
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26L4503
CH-5600
CS213
26L4503
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diode sy 170
Abstract: 26L4503 5SHX 14H4502 KN11 35L45 35l450
Text: I N T E G R A T E D G A T E - C O M M U T A T E D _ T H Y R I S T O R S - Patented free-floating silicon techno logy. - Patented low-inductance housing technology. - Optional snubberless operation. - Exceptionally low on-state losses.
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