npn phototransistor
Abstract: Silicon NPN Phototransistor TEKT5400S 8239 TSKS5400S
Text: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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TEKT5400S
TSKS5400S
2002/95/EC
2002/96/EC
TEKT5400S
18-Jul-08
npn phototransistor
Silicon NPN Phototransistor
8239
TSKS5400S
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PDF
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TEMT7000X01
Abstract: J-STD-020D VSMB1940X01 vsmb
Text: TEMT7000X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • High photo sensitivity • High radiant sensitivity
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TEMT7000X01
AEC-Q101
VSMB1940X01
J-STD-020
TEMT7000X01
18-Jul-08
J-STD-020D
VSMB1940X01
vsmb
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PDF
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TEMT7100X01
Abstract: J-STD-020D VSMB1940X01
Text: TEMT7100X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • • • • • • • • • • • 20043-1 DESCRIPTION • TEMT7100X01 is a silicon NPN epitaxial planar phototransistor with daylight blocking filter in a miniature,
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Original
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TEMT7100X01
TEMT7100X01
AEC-Q101
VSMB1940X01
J-STD-020
18-Jul-08
J-STD-020D
VSMB1940X01
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PDF
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Untitled
Abstract: No abstract text available
Text: TEMT7000X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • High photo sensitivity • High radiant sensitivity
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Original
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TEMT7000X01
AEC-Q101
VSMB1940X01
J-STD-020
TEMT7000X01
18-Jul-08
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PDF
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VSMB1940X01
Abstract: No abstract text available
Text: TEMT7100X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • • • • • • • • 20043-1 • • • DESCRIPTION TEMT7100X01 is a silicon NPN epitaxial planar phototransistor with daylight blocking filter in a miniature, black 0805 package for surface mounting. Filter bandwidth
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Original
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TEMT7100X01
TEMT7100X01
AEC-Q101
VSMB1940X01
J-STD-020
18-Jul-08
VSMB1940X01
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PDF
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NPN TEMT7000X01
Abstract: phototransistor 500-600 nm TEMT7000X01 J-STD-020D VSMB1940X01 radiation sensors
Text: TEMT7000X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package, RoHS Compliant, Released for Lead Pb -free Solder Process, AEC Q101 Released FEATURES • Package type: surface mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
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Original
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TEMT7000X01
VSMB1940X01
J-STD-020
TEMT7000X01
18-Jul-08
NPN TEMT7000X01
phototransistor 500-600 nm
J-STD-020D
VSMB1940X01
radiation sensors
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PDF
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VSMB1940X01
Abstract: J-STD-020D 20594 Q-101
Text: TEMT7100X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package, RoHS Compliant, Released for Lead Pb -free Solder Process, AEC Q101 Released FEATURES • Package type: surface mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
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Original
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TEMT7100X01
VSMB1940X01
J-STD-020
2002/95/EC
2002/96/EC
TEMT7100X01
18-Jul-08
VSMB1940X01
J-STD-020D
20594
Q-101
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PDF
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270 Phototransistor
Abstract: TEKT5400S TSKS5400S
Text: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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Original
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TEKT5400S
TSKS5400S
2002/95/EC
2002/96/EC
TEKT5400S
11-Mar-11
270 Phototransistor
TSKS5400S
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PDF
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PC852XNNSZ0F
Abstract: pc3hu7xyip PC357NJ0000F
Text: OPTO • Photocoupler PHOTOCOUPLER LINEUP Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series General purpose, High collector-emitter voltage Low input current AC input response Darlington phototransistor High sensitivity,
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PC357NJ0000F
PC451J00000F
PC364NJ0000F
PC355NJ0000F
PC452J00000F
PC367NJ0000F
PC354NJ0000F
PC365NJ0000F
PC925LENSZ0F
PC928J00000Fâ
PC852XNNSZ0F
pc3hu7xyip
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PDF
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Untitled
Abstract: No abstract text available
Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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Original
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TEKT5400S
TSKS5400S
2002/95/EC
2002/96/EC
TEKT5400S
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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Original
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TEKT5400S
TSKS5400S
2002/95/EC
2002/96/EC
TEKT5400S
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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Original
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TEKT5400S
TSKS5400S
2002/95/EC
2002/96/EC
TEKT5400S
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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Original
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TEKT5400S
TSKS5400S
2002/95/EC
2002/96/EC
TEKT5400S
2002/95/EC.
2011/65/EU.
JS709A
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PDF
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Phototransistors
Abstract: No abstract text available
Text: S enso rs Infrared Light Emitting Diodes SIR • SIM — 264 Photointerrupters (RPI • SIU) - 270 Phototransistors Output (Molded Type) Phototransistors (RPM • RPT) - 266 270 Phototransistors Output (Type with case)
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OCR Scan
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SIR-33ST
Phototransistors
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PDF
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Untitled
Abstract: No abstract text available
Text: SL5500 SL5501 SL5511 , ÛUALITY TECHNOLOGIES CORP 57E D • 74bbô51 0GD4bûT 270 «fiTY OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn phototransistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.
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OCR Scan
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SL5500
SL5501
SL5511
OT212.
MSA048-2
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PDF
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C1775
Abstract: DIODE CH71 c1771 C1770 H11DX C2079 C1772 C1774 C2090 H11D1
Text: GENL INST.Rt OPTOELEK "flfl DE | BÛTDlEfi □□□SÛT3 E | ~ t GENERAL INSTRUMENT PHOTOTRANSISTOR OPTOCOUPLERS P A C K A G E D IM E N S IO N S HI1D1/1Z HI1D2/2Z H11D3/3Z D E S C R IP T IO N r" j 6.86 .270 o WWW 8.89 (.350) 6.35 (.250) t 7.62 (.300) REF
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OCR Scan
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T-m-80
3jhi55)
C2090
C2079
h11d1/1z
h11d3/3z
H11DX
C1770
C1772
C1774
C1775
DIODE CH71
c1771
C1770
C2079
C1772
C1774
C2090
H11D1
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PDF
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C1685 transistor
Abstract: transistor c1684 Cl684 MCT-2201 MCT2200 C1685 C1681 TRANSISTOR C1685 C1285 H127
Text: GENL INSTR-i OPTOELEK flfl GÉNÉRAL INSTRUMENT DE | 3ÔT015Ô DOOETbT T | ~ VDE APPROVED p h o to tra n sisto r op toco u p le rs DVE PACKAGE DIMENSIONS [& eg] DESCRIPTION Æi r* { 6.86 .270 6.35 (.250) 0.36 (.014) I 0.20 (.008) O WWW T 8.89 (.350) 7.62
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OCR Scan
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C2090
C2079
MCT2200/0Z
MCT2201/1Z
MCT2202/2Z
MCT2200,
MCT2201
MCT2202
i012fl
C1684
C1685 transistor
transistor c1684
Cl684
MCT-2201
MCT2200
C1685
C1681
TRANSISTOR C1685
C1285
H127
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PDF
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C1318 transistor
Abstract: C1335 transistor transistor C1318 C1317 transistor c1335 c1318 c1316 c1317 C1330 C1251
Text: GENL INSTRi OP T OE L E K Û6 GENERAL BflTGiafl . 7 . rib rib & ! 6.86 .270 15° M A X 6.35 (.250) 0.36 (.014) —«4 H— I _ 7.62 (.300) REF 8.38 (.330) 2.54{.100)TYP*j 0.20 (.008) I 8.89 (.350) ,- 1.78 (.070) REF / 1.78 (.070) TYP 3.84 (.155) t
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OCR Scan
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MCT275
C2090
C2079
MCT275
C1318
c1251
0D02TÃ
T-Hh83
C1320
C1318 transistor
C1335 transistor
transistor C1318
C1317 transistor
c1335
c1318
c1316
c1317
C1330
C1251
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PDF
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C1959
Abstract: ic 2731 transistor c1959
Text: 88D 02933 DUALITY TECHNOLOGIES CORP flû DT-ty/-gj> I I 7MbbflSl □ □ □ E c133 □ |jl 1.6 mA DUAL MGL2730 HCPL-2730J 0.5 mA DUAL MCL2731 (HCPL-2731) PACKAGE D IM E N S IO N S & f t i Æ) ifl 6.861-270) 6.35 (.250) 0.36 (.014) \ 0.20 (.008) lo IP t ÿ
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OCR Scan
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MGL2730
HCPL-2730J
MCL2731
HCPL-2731)
MCL/HCPL-2730/31
700nm
74bbflSl
C1959
C1600
C1995
C1959
ic 2731
transistor c1959
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PDF
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MCT2E equivalent
Abstract: c826 NPN c823 c815 CS15 TRANSISTOR c826 npn D9B diode C818 transistor c815 C2079
Text: ~ûfl GENL INSTR t OPTOELEK DE 1 30=10150 □ □05'ibl l» T ~ PT"HI'B3 « G E N E R A I! iWRlSMEISTR MCT2E DESCRIPTION PACKAGE DIMENSIONS db f t f t I 6.86 .270 ^ 6.35 (.250) 0.36 (.014) I 0.20 (.008) 7.62 (.300) REF 8.38 (.330) 2Æ4(.100)TYP-*j 15° MAX
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OCR Scan
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C2090
C2079
MCT2E equivalent
c826
NPN c823
c815
CS15 TRANSISTOR
c826 npn
D9B diode
C818
transistor c815
C2079
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PDF
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high sensitivity reflective phototransistor
Abstract: phototransistor visible light ON2270 ONN2270 reflective photo sensor
Text: Panasonic Reflective Photosensors Photo Reflectors ON2270 Reflective Photosensor U nit : mm • Outline Mark for indicating anode side C0.5 O N N 2 270 is a sm all, th in re fle ctiv e p h o to se n so r c o n sistin g o f a high efficiency G aA s infrared light em itting diode w hich is integrated
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OCR Scan
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ON2270
ONN2270
TTI11
high sensitivity reflective phototransistor
phototransistor visible light
ON2270
reflective photo sensor
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PDF
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SN72710L
Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
Text: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4
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OCR Scan
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LH0002C
LH0002CN
NH0005C
DAC08CZ
NH0014C
DH0034
78M12HC
MMH0026CG
79M12AHC
75460BP
SN72710L
MC1013P
MC680P
796HC
mc1235l
MC838P
MC814G
MC1670L
723HC
741hm
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PDF
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cli305 optical switch
Abstract: No abstract text available
Text: CLI305 CLI375 CLI325 CLI355 Optical Switches GENERAL DESCRIPTION — The CLI305 — CLI375 se ries are exceptionally rugged optical switches with Valox housings and an epoxy backfill. The infrared emitting diode and the phototransistor/darlington phototransistor
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OCR Scan
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CLI305
CLI375
CLI325
CLI355
CLI305
CLI375
CLI325
CLI55B.
cli305 optical switch
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PDF
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Untitled
Abstract: No abstract text available
Text: S ensors Infrared Ught Emitting Diodes SIR * SIM — 264 Phototransistors (RPM • RPT) - 266 PIN Photodiodes (RPM) -267 Photo tCs (RPM) - 267 Photosensitive ICs (RPM) -268
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OCR Scan
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SIR-33ST
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PDF
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