H11DX
Abstract: H11D1 4N38 H11D2 H11D3 H11D4
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
H11D1
4N38
H11D2
H11D3
H11D4
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25E 106
Abstract: H11D1M
Text: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high
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4N38M,
H11D1M,
H11D2M,
H11D3M,
MOC8204M
H11DXM
MOC8204M
MOC8204M,
25E 106
H11D1M
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h11dx
Abstract: No abstract text available
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11DX
H11D1
H11D2
H11D3
H11D4
H11D1,
H11D2,
H11D3,
H11D4,
E90700
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H11D1M
Abstract: 4N38M H11D1SM H11D2M H11D3M MOC8204M H11D1SR2VM
Text: H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers tm Features General Description • High voltage: The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high
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H11D1M,
H11D2M,
H11D3M,
4N38M,
MOC8204M
H11DXM,
4N38M
MOC8204M
MOC8204M,
H11D1M
H11D1SM
H11D2M
H11D3M
H11D1SR2VM
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H11DX
Abstract: 4N38 H11D1 H11D2 H11D3 H11D4 DSA00106336
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
4N38
H11D1
H11D2
H11D3
H11D4
DSA00106336
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H11DX
Abstract: H11D4.300 H11D12 4N38
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11DX
H11D1
H11D2
H11D3
H11D4
H11D1,
H11D2,
H11D3,
H11D4,
E90700
H11D4.300
H11D12
4N38
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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Original
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PDF
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
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4N38
Abstract: H11D1 H11D2 H11D3 H11D4 H11DX
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
4N38
H11D1
H11D2
H11D3
H11D4
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H11D1M
Abstract: MOC8204M 4N38M H11D1 H11D2M H11D3M
Text: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high
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4N38M,
H11D1M,
H11D2M,
H11D3M,
MOC8204M
H11DXM
MOC8204M
MOC8204M,
H11D1M
4N38M
H11D1
H11D2M
H11D3M
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H11DX
Abstract: H11D1 H11D2
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
H11D1
H11D2
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MOC8204M
Abstract: all datasheet phototransistor 4N38M OPTOCOUPLERs MARKING CODE H11D1 H11D1M H11D2M H11D3M
Text: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high
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4N38M,
H11D1M,
H11D2M,
H11D3M,
MOC8204M
H11DXM
MOC8204M
MOC8204M,
all datasheet phototransistor
4N38M
OPTOCOUPLERs MARKING CODE
H11D1
H11D1M
H11D2M
H11D3M
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soc1044
Abstract: SOC1044M H11Ax H11SBDXM_108R2 h11sbdxm H11LXM h11lxm5555r2 MOC3022 H11SADXM h11cx
Text: Date Created: 4/21/2004 Date Issued: 4/30/2004 PCN # 20033602-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.
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0033602-A
MOCD213R2VM
MOCD217R1M
MOCD217R2VM
MOCD223R1M
MOCD223R2VM
OF4822300W
SL5500300W
SL5500S
SL5501
soc1044
SOC1044M
H11Ax
H11SBDXM_108R2
h11sbdxm
H11LXM
h11lxm5555r2
MOC3022
H11SADXM
h11cx
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V4N36
Abstract: ic MCT2e
Text: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 PHOTOTRANSISTORS High Voltage, High CTR, High Sensitivity Jedec Types Phototransistor General Purpose High Collector-Emitter Voltage
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H11Dx:
CS200,
CS201,
CS202
100mA
CNY17-3
CNY17-4
CNY17-5
SFH600-0
SFH600-1
V4N36
ic MCT2e
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C1775
Abstract: h11dx C2079 C1770 C1771 H11D1 H11D2 H11D3 C1773 RBE1
Text: [su HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11D1 H11D2 H11D3 PACKAGE DIMENSIONS DESCRIPTION The H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled
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H11D1
H11D2
H11D3
H11DX
H11D1-D2,
H11D3,
H11D1,
H11D2,
H11D3â
E90700
C1775
C2079
C1770
C1771
H11D3
C1773
RBE1
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11d2
Abstract: C1770 h11dx C1775 transistor C1775
Text: HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS II H11D1 H11D2 H11D3 PACKAGE DIMENSIONS rib rib rib d e s c r ip t io n The H11DX is a phototransistor-type optically coupled isolator. An infrared em itting diode m anufactured from specially grow n gallium arsenide is selectively coupled
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H11D1
H11D2
H11D3
H11DX
H11D1-D2,
H11D3,
H11D1,
H11D2,
H11D3--
E90700
11d2
C1770
C1775
transistor C1775
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Untitled
Abstract: No abstract text available
Text: HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS The H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled
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H11D1/1Z
H11D2/2Z
H11D3/3Z
H11DX
H11D1-D2,
H11D3,
H11D1,
H11D2,
H11D3--
C1774
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Untitled
Abstract: No abstract text available
Text: [•H I HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11D1 H11D2 H11D3 DESCRIPTION PACKAGE DIMENSIONS dò cib & o tp $ Qp 7.62 MAX ~ 0.41 _ i t The H11DX is a phototransistor-type optically coupled isolator. An infrared em itting diode m anufactured from
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H11D1
H11D2
H11D3
H11DX
H11D1-D2,
H11D3,
H11D1,
H11D2,
H11D3â
C1686
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c1775
Abstract: C1770 H11D1 H11D2 H11D3 H11DX
Text: HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPT0ELECTHO8ICS H11D1 H11D2 H11D3 DESCRIPTION PACKAGE DIMENSIONS 6.33 REF T h e H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled
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H11D1
H11D2
H11D3
STI603-02
C2G79
H11DX
H11D1-D2,
H11D1,
H11D2,
c1775
C1770
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H11DX
Abstract: 740L6010 H11Ax 740L6001 Optocouplers QTC 740L6000 H11GX H11A1Z QTC 740L6000 mct6 optocoupler
Text: mm QUALITY UL PACKAGE CODES • l TECHNOLOGIES UL APPROVED OPTOCOUPLERS UL LISTING - YELLOW CARD A UL yellow card may either specify the optocoupler manufacturer’s own device part number or a package code. Optocouplers are listed as a package code consisting of a single
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E501B1
8916R19&
E50151
CNX35
MID400,
H11GX,
MCT52XX,
740L6000,
740L6001,
740L6010,
H11DX
740L6010
H11Ax
740L6001
Optocouplers QTC
740L6000
H11GX
H11A1Z
QTC 740L6000
mct6 optocoupler
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opt 300
Abstract: h11dx Optocouplers QTC qtc optocoupler h11ax Qtc mct6 qtc cny17-1 OPT300 MCT22XX fpqu2
Text: æO UL PACKAGE CODES 0PTOELECTmmCS UL APPROVED OPTOCOUPLERS UL LISTIN O •YELLOW CARD G EN ERAL A UL yellow card may either specify the optocoupler manufacturer's own device part number or a package code. Optocouplers are listed as a package code consisting of a single
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E50151
3407U001
MID400,
H11GX,
MCT52XX,
740L6000,
740L6001,
740L6010,
CNY17-X,
CNY17F-X,
opt 300
h11dx
Optocouplers QTC
qtc optocoupler
h11ax
Qtc mct6
qtc cny17-1
OPT300
MCT22XX
fpqu2
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Untitled
Abstract: No abstract text available
Text: JUALÌTY TE CHNOLOG IES CORP QUALITY TECHNOLOGIES 74L>L>aSl Q0G34SS b E7E D HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS & c§3 dft t 6.86 15° MAX 6.35 0.36 I T S ngnr 8,89 8.38 0.20 7.62
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Q0G34SS
H11D1/1Z
H11D2/2Z
H11D3/3Z
H11DX
H11D1-D2,
H11D3,
MCT9001
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C1775
Abstract: DIODE CH71 c1771 C1770 H11DX C2079 C1772 C1774 C2090 H11D1
Text: GENL INST.Rt OPTOELEK "flfl DE | BÛTDlEfi □□□SÛT3 E | ~ t GENERAL INSTRUMENT PHOTOTRANSISTOR OPTOCOUPLERS P A C K A G E D IM E N S IO N S HI1D1/1Z HI1D2/2Z H11D3/3Z D E S C R IP T IO N r" j 6.86 .270 o WWW 8.89 (.350) 6.35 (.250) t 7.62 (.300) REF
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T-m-80
3jhi55)
C2090
C2079
h11d1/1z
h11d3/3z
H11DX
C1770
C1772
C1774
C1775
DIODE CH71
c1771
C1770
C2079
C1772
C1774
C2090
H11D1
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