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    Rochester Electronics LLC H11D3

    OPTOISO 5.3KV TRANS W/BASE 6-DIP
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    DigiKey H11D3 Tube 3,079 1,665
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    Vishay Semiconductors H11D3

    OPTOISO 5.3KV TRANS W/BASE 6-DIP
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    DigiKey H11D3 Tube 1,918 1
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    Onlinecomponents.com H11D3 989
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    onsemi H11D3SR2M

    OPTOISO 4.17KV TRANS W/BASE 6SMD
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    Quest Components H11D3SR2M 1,600
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    Flip Electronics H11D3SR2M 3,980
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    Isocom Components H11D3XSMT-R

    OPTOISO 5.3KV 1CH TRANS W/BASE
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    onsemi H11D3M

    OPTOISO 4.17KV TRANS W/BASE 6DIP
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    DigiKey H11D3M Tube 813 1
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    Avnet Americas H11D3M Bulk 15 Weeks 3,000
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    Mouser Electronics H11D3M 317
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    TME H11D3M 769 1
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    Avnet Silica H11D3M 1,000 16 Weeks 1,000
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    New Advantage Corporation H11D3M 1,674 1
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    H11D3 Datasheets (56)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    H11D3 Fairchild Semiconductor High Voltage Phototransistor Optocoupler Original PDF
    H11D3 Fairchild Semiconductor 6-pin DIP high voltage transistor Optocoupler Original PDF
    H11D3 Fairchild Semiconductor Optoisolators - Transistor, Photovoltaic Output, Isolators, OPTOISO 5.3KV TRANS W/BASE 6SMD Original PDF
    H11D3 Infineon Technologies Optocoupler, 6 Pin, Sngl, 20% CTR, High Reverse Voltage Original PDF
    H11D3 Infineon Technologies OptoCoupler, Phototransistor, 5.3 KV, TRIOS Optocoupler Original PDF
    H11D3 Isocom Components 6V, 60mA high voltage optically coupled isolated phototransistor output Original PDF
    H11D3 Siemens PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVCER VOLTAGE OPTOCOUPLER Original PDF
    H11D3 Vishay Semiconductors Optoisolators - Transistor, Photovoltaic Output, Isolators, OPTOISO 5.3KV TRANS W/BASE 6DIP Original PDF
    H11D3 Vishay Siliconix Optocouplers Original PDF
    H11D3 Fairchild Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Photo Transistor Output, 5.3kV, 30V Min. BV CEO Scan PDF
    H11D3 Fairchild Semiconductor Optoelectronics Data Book 1980 Scan PDF
    H11D3 Fairchild Semiconductor Optoelectronics Data Book 1979 Scan PDF
    H11D3 General Electric Semiconductor Data Handbook 1977 Scan PDF
    H11D3 General Instrument High Voltage VDE Approved Phototransistor Optocouplers Scan PDF
    H11D3 Isocom Components Optoelectronics Data Book 1996 Scan PDF
    H11D3 Motorola Switchmode Datasheet Scan PDF
    H11D3 Motorola European Master Selection Guide 1986 Scan PDF
    H11D3 Motorola Optoelectronics Device Data 1988 Scan PDF
    H11D3 Unknown Interface IC/Device Data Book (Japanese) Scan PDF
    H11D3 QT Optoelectronics High Voltage Phototransistor Optocouplers Scan PDF

    H11D3 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    H11DX

    Abstract: H11D1 4N38 H11D2 H11D3 H11D4
    Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage


    Original     		H11D1 H11D2 H11D3 H11D4 H11DX H11D1, H11D2, H11D3, H11D4, E90700 H11D1 4N38 H11D2 H11D3 H11D4 PDF

    smd s101

    Abstract: s101 6-pin RM1M VC200
    Text: SIEMENS H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVcer VOLTAGE OPTOCOUPLER FEATURES * * * • * * * * * * * * CTR at lp=10 mA, BVceR=10 V: >20% Good CTR Linearity with Forward Current Low CTR Degradation Very High Coliector-Emitter Breakdown


    OCR Scan     		H11D1/H11D2/H11D3 H11D1/H11D2, E52744 H11D1/2/3 smd s101 s101 6-pin RM1M VC200 PDF

    H11D1

    Abstract: H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X
    Text: H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 Dimensions in mm 6 1 2 5


    Original     		H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 DB91077m-AAS/A1 H11D1 H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X PDF

    25E 106

    Abstract: H11D1M
    Text: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high


    Original     		4N38M, H11D1M, H11D2M, H11D3M, MOC8204M H11DXM MOC8204M MOC8204M, 25E 106 H11D1M PDF

    H11D3

    Abstract: RBE1
    Text: H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVCER VOLTAGE OPTOCOUPLER FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCER=300 V


    Original     		H11D1/H11D2/H11D3 H11D1/H11D2, H11D3, E52744 H11D1/2/3 H11D1/2/3 H11D3 RBE1 PDF

    H11D1-X007

    Abstract: H11D1 H11D2 H11D3 H11D4
    Text: H11D1/ H11D2/ H11D3/ H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current Low CTR Degradation


    Original     		H11D1/ H11D2/ H11D3/ H11D4 H11D1/H11D2, H11D3/H11D4, 2002/95/EC 2002/96/EC UL1577, E52744 H11D1-X007 H11D1 H11D2 H11D3 H11D4 PDF

    H11D2

    Abstract: H11D1-X007
    Text: H11D1/ H11D2/ H11D3/ H11D4 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current


    Original     		H11D1/ H11D2/ H11D3/ H11D4 H11D1/H11D2, H11D3/H11D4, i179004 E52744 VDE0884) IEC60950 H11D2 H11D1-X007 PDF

    siemens d 2101

    Abstract: RB1M
    Text: H11D1/H11D2/H11D3 SIEMENS PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVcer VOLTAGE OPTOCOUPLER FEATURES Package Dimensions in Inches mm • CTR at lp*10 mA, BVCER=10 V: ¿20% * Good CTR Llnsarlty with Forward Currant * Low CTR Degradation • Very High Collector-Em ltter Breakdown


    OCR Scan     		H11D1/H11D2/H11D3 H11D1/H11D2, -H11D3, cH11D1/2/3 siemens d 2101 RB1M PDF

    transistor SMD 11d

    Abstract: 11D transistor Diode smd 11D J
    Text: SIEMENS H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS* HIGH BVcer VOLTAGE OPTOCOUPLER FEATURES Packaqe Dimensions in Inches mm . • CTR at lF=10 mA, BVCER=10 V: >20% • Good CTR Linearity with Forward Current • Low CTR Degradation ♦ " I?1 fSlVl


    OCR Scan     		H11D1/H11D2/H11D3 H11D1/2/3 transistor SMD 11d 11D transistor Diode smd 11D J PDF

    VDE0303

    Abstract: No abstract text available
    Text: Infineon H11D1/H11D2/H11D3/H11D4 FEATURES CTR at / F=10 mA, BVCER=10 V: >20% Good CTR Linearity with Forward Current Low CTR Degradation Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCer =300 V - H11D3/H11D4, BVc e r=200 V Isolation Test Voltage: 5300 VRMS


    OCR Scan     		H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 5mA10J 1-888-lnfineon 11D1/2/3/4 VDE0303 PDF

    C3883

    Abstract: GE H11D2 verin VDE0833 H11D1 GE
    Text: MOTOROLA B SEMICONDUCTOR TECHNICAL DATA H11D1 H11D2 H11D3 H11D4 6-Pin DIP Optoisolators Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e , s ilico n , p h o to tra n s is to r d e te cto rs in a sta n d a rd 6-pin DIP package. T hey are d esig n ed fo r


    OCR Scan     		H11D1 H11D3 E54915 C3883 GE H11D2 verin VDE0833 H11D1 GE PDF

    Untitled

    Abstract: No abstract text available
    Text: ISOCOfl COMPONENTS LTD 4886510 ISOCOH INC ?5C D • 4flflfc,51D Q00D172 5 2 7 75C 0 0 1 7 2 D H11D1 H11D2 H11D3 H11D4 ■ iso ¿ //- &B High Voltage Optically Coupled Isolators PACKAGE DIMENSIONS IN INCHES MM -I H 066 t t6.2000» rsc (6 10) • o o c^ L J l_l L J


    OCR Scan     		Q00D172 H11D1 H11D2 H11D3 H11D4 PDF

    Untitled

    Abstract: No abstract text available
    Text: H11D1/H11D2/H11D3/H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection, High BVCER Voltage FEATURES • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % • Good CTR linearly with forward current • Low CTR degradation A 1 6 B C


    Original     		H11D1/H11D2/H11D3/H11D4 i179004 H11D1/H11D2, H11D3/H11D4, 2002/95/EC 2002/96/EC H11D1/H11D2/H11D3/H11D4 18-Jul-08 PDF

    H11D3

    Abstract: DSA0011162
    Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage


    Original     		H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3/4 17-August-01 H11D3 DSA0011162 PDF

    H11D1

    Abstract: H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X
    Text: H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm 'X' SPECIFICATIONAPPROVALS z VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 2.54 7.0


    Original     		H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 H11D2 H11D1 H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X PDF

    11d2

    Abstract: C1770 h11dx C1775 transistor C1775
    Text: HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS II H11D1 H11D2 H11D3 PACKAGE DIMENSIONS rib rib rib d e s c r ip t io n The H11DX is a phototransistor-type optically coupled isolator. An infrared em itting diode m anufactured from specially grow n gallium arsenide is selectively coupled


    OCR Scan     		H11D1 H11D2 H11D3 H11DX H11D1-D2, H11D3, H11D1, H11D2, H11D3-- E90700 11d2 C1770 C1775 transistor C1775 PDF

    h11dx

    Abstract: No abstract text available
    Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage


    Original     		H11DX H11D1 H11D2 H11D3 H11D4 H11D1, H11D2, H11D3, H11D4, E90700 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS The H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled


    OCR Scan     		H11D1/1Z H11D2/2Z H11D3/3Z H11DX H11D1-D2, H11D3, H11D1, H11D2, H11D3-- C1774 PDF

    Untitled

    Abstract: No abstract text available
    Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVcer Voltage Optocoupler FEATURES Dimensions in inches mm • CTR at / F=1 O m A, BVCER=10 V: >20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Em itter Breakdown Voltage


    OCR Scan     		H11D1/H11D2/H11D3/H11D4 D3/H11 PDF

    H11D1

    Abstract: H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X
    Text: H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 Dimensions in mm 6 1 2 5


    Original     		H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 DB91077m-AAS/A2 H11D1 H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X PDF

    H11D1

    Abstract: No abstract text available
    Text: 1 of 4 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 H11D1, H11D2, H11D3, H11D4 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics


    Original     		H11D1, H11D2, H11D3, H11D4 H11D1-H11D4 H11D1-D3 H11D4 100ohm H11D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: JUALÌTY TE CHNOLOG IES CORP QUALITY TECHNOLOGIES 74L>L>aSl Q0G34SS b E7E D HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS & c§3 dft t 6.86 15° MAX 6.35 0.36 I T S ngnr 8,89 8.38 0.20 7.62


    OCR Scan     		Q0G34SS H11D1/1Z H11D2/2Z H11D3/3Z H11DX H11D1-D2, H11D3, MCT9001 PDF

    H11D3

    Abstract: No abstract text available
    Text: g y, , H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage


    Original     		H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3 H11D1/2/3/4 H11D3 PDF

    H11D1M

    Abstract: 4N38M H11D1SM H11D2M H11D3M MOC8204M H11D1SR2VM
    Text: H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers tm Features General Description • High voltage: The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high


    Original     		H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M H11DXM, 4N38M MOC8204M MOC8204M, H11D1M H11D1SM H11D2M H11D3M H11D1SR2VM PDF