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    27C010 WSI Search Results

    27C010 WSI Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    27C010-120DI Rochester Electronics LLC 27C010 - 1024K (128K x 8) CMOS EPROM Visit Rochester Electronics LLC Buy
    AM27C010-55JC Rochester Electronics LLC AM27C010 - CMOS EPROM 1 Megabit (128K x 8) Visit Rochester Electronics LLC Buy
    AM27C010-70DI Rochester Electronics LLC AM27C010 - CMOS EPROM 1 Megabit (128K x 8) Visit Rochester Electronics LLC Buy
    AM27C010-70PI-G Rochester Electronics LLC AM27C010 - CMOS EPROM 1 Megabit (128K x 8) Visit Rochester Electronics LLC Buy
    AM27C010-200DM/B Rochester Electronics LLC AM27C010 - CMOS EPROM 1 Megabit (128K x 8) Visit Rochester Electronics LLC Buy

    27C010 WSI Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: WS27C010L Military 128K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • DESC SMD No. 5962-89614 • Compatible with JEDEC 27010 and — 90 ns Access Time 27C010 EPROMs • Fast Programming • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA


    Original     		WS27C010L 27C010 WS27C010L MIL-STD-883C PDF

    27C010L

    Abstract: 27C010L-12 ws27c010l-15dmb 27C010 WS27C010L WS27C010L-12CMB 27C010L-20 27010 eprom eprom 27010 27C010 wsi
    Text: WS27C010L Military 128K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • DESC SMD No. 5962-89614 • Compatible with JEDEC 27010 and — 90 ns Access Time 27C010 EPROMs • Fast Programming • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA


    Original     		WS27C010L 27C010 WS27C010L MIL-STD-883C 27C010L 27C010L-12 ws27c010l-15dmb WS27C010L-12CMB 27C010L-20 27010 eprom eprom 27010 27C010 wsi PDF

    27C256 General Semiconductor

    Abstract: NM27C512N 27C010 27C020 27C040 27C080 27C256 C1995 NM27C512
    Text: NM27C512 524 288-Bit 64K x 8 High Performance CMOS EPROM General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM) It is manufactured using National’s proprietary 0 8 micron CMOS AMGTM EPROM technology for an excellent combination of speed and economy while providing excellent reliability


    Original     		NM27C512 288-Bit NM27C512 20-3A 27C256 General Semiconductor NM27C512N 27C010 27C020 27C040 27C080 27C256 C1995 PDF

    FM27C040

    Abstract: 27C010 FM27C040QXXX
    Text: FM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide


    Original     		FM27C040 304-Bit FM27C040 304-bit 150ns 32-pin 27C010 FM27C040QXXX PDF

    27C010

    Abstract: FM27C040 FM27C040QXXX FM27C040VXXX J32AQ VA32A
    Text: FM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide


    Original     		FM27C040 304-Bit FM27C040 304-bit 150ns 32-pin 27C010 FM27C040QXXX FM27C040VXXX J32AQ VA32A PDF

    27C010

    Abstract: 27C040 27C256 FM27C512 FM27C512Q
    Text: FM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM General Description The FM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit. The FM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG EPROM technology for an excellent combination of speed and economy while


    Original     		FM27C512 288-Bit FM27C512 wait-st1793-856858 27C010 27C040 27C256 FM27C512Q PDF

    b058

    Abstract: NM27C512 National Controls ne 545 27C010 27C020 27C040 27C080 27C256
    Text: NM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM General Description The NM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit. The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG EPROM technology for an excellent combination of speed and economy while


    Original     		NM27C512 288-Bit NM27C512 b058 National Controls ne 545 27C010 27C020 27C040 27C080 27C256 PDF

    27C080

    Abstract: NM27C040 27C010 27C020
    Text: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide


    Original     		NM27C040 304-Bit NM27C040 304-bit 150ns 32-pin 27C080 27C010 27C020 PDF

    512K x 8 High Performance CMOS EPROM

    Abstract: 27C010 27C020 27C080 NM27C040
    Text: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide


    Original     		NM27C040 304-Bit NM27C040 304-bit 150ns 32-pin 512K x 8 High Performance CMOS EPROM 27C010 27C020 27C080 PDF

    27C010

    Abstract: 27C040 27C256 FM27C512
    Text: FM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM General Description The FM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit. The FM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG EPROM technology for an excellent combination of speed and economy while


    Original     		FM27C512 288-Bit FM27C512 operat44 27C010 27C040 27C256 PDF

    LEAPER-3

    Abstract: 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver
    Text: COMPANY PROFILE 1 Leap Electronic was established in 1980 located in Taipei Taiwan. With great experienced employees, Leap has dedicated on test equipment and provided a whole and perfect environment of development. Additional, the Company has been qualified by major IC manufacturer such as ATMEL, AMD, MICROCHIP, WINBOND,etc.


    Original     		PIC16C52/54/54A PIC16C55/56/57/57A/58A PIC12C508/509 PIC16C61 PIC16C620/621/622 PIC16C71/710 PIC16C62/63/64/65 PICC16C72/73/74/74A PIC16C83/84 PIC17C42/42A/43/44 LEAPER-3 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver PDF

    27C512 National Semiconductor

    Abstract: 27C010 27C040 27C080 27C256 27C512 C1996 NM27C020 NM27C020Q
    Text: June 1995 NM27C020 2 097 152-Bit 256K x 8 UV Erasable CMOS EPROM General Description The NM27C020 is a high performance 2 097 152-bit EPROM It is organized as 256 K-words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs The ‘‘Don’t Care’’ feature during read operations enables memory expansions up


    Original     		NM27C020 152-Bit NM27C020 27C512 National Semiconductor 27C010 27C040 27C080 27C256 27C512 C1996 NM27C020Q PDF

    27C010L

    Abstract: WS27C010L 27C010 wsi WS27C010L-15DMB
    Text: WS27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESC SMD No. 5962-89614 • High Performance CMOS — 120 ns Access Time • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — 32 Pin CERDIP Package


    OCR Scan     		WS27C010L 128Kx 27C010 WS27C010L MIL-STD-883C 27C010L 27C010 wsi WS27C010L-15DMB PDF

    27C010L

    Abstract: 27010 eprom 27C010L-15 27C010L-20
    Text: WS27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESC SMD No. 5962-89614 • High Performance CMOS — 90 ns Access Time • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA


    OCR Scan     		WS27C010L 128Kx 27C010 S27C010L MIL-STD-883C 27C010L 27010 eprom 27C010L-15 27C010L-20 PDF

    smd JF

    Abstract: cllcc 542w
    Text: WS27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESC SMD No. 5962-89614 • High Performance CMOS — 90 ns Access Time • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA


    OCR Scan     		WS27C010L 128Kx 27C010 WS27C010L MIL-STD-883C smd JF cllcc 542w PDF

    Untitled

    Abstract: No abstract text available
    Text: WS27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESCSMD No. 5962-89614 • High Performance CMOS — 90 ns A ccess Tim e • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — Latch-U p Im m unity to 200 mA


    OCR Scan     		WS27C010L 128Kx 27C010 -883C WS27C01 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY F = A IR CH II_ D SEMICONDUCTOR TM N3 >1 O O o FM27C040 4,194,304-Bit 512K x 8 High Speed CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable Read Only Memory. It Is organized as 512K words


    OCR Scan     		FM27C040 304-Bit 304-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: F = A IR C H IU D ì M I C O N D U C T O R TM NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized


    OCR Scan     		NM27C040 304-Bit 304-bit 100ns PDF

    Untitled

    Abstract: No abstract text available
    Text: J u ly 1998 SEMICONDUCTOR TM FM27C040 4,194,304-Bit 512K x 8 High Speed CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable Readonly Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs


    OCR Scan     		FM27C040 304-Bit FM27C040 304-bit 32-pinim PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TM NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide


    OCR Scan     		NM27C040 304-Bit NM27C040 304-bit 150ns PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TM NM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM The NM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit. General Description The NM27C512 is a high performance 512K UV Erasable Electri­


    OCR Scan     		NM27C512 288-Bit NM27C512 PDF

    27C010

    Abstract: 27C020 27C080 A12C NM27C040
    Text: January 1994 NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility


    OCR Scan     		NM27C040 304-Bit NM27C040 304-bit off299-7000 Cep-01451, 27C010 27C020 27C080 A12C PDF

    D-1632

    Abstract: 27C010 wsi
    Text: WS27C010L LOW POWER 1 MEG 128K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS — * DESC SMD No. 5962-89614 je d e C Standard Pin Configuration 90 ns Access Time • • Standby Current <100 |JA — 32 Pin CERDIP Package 32 Pin Leaded Chip Carrier (CLDCC)


    OCR Scan     		WS27C010L WS27C010L WS27C010L-90D WS27C010L-90J WS27C010L-10D/5 WS27C010L-10J/5 WS27C010L-10L/5 WS27C010L-12D WS27C010L-12J WS27C010L-12L D-1632 27C010 wsi PDF

    smd A18I

    Abstract: 27C256L 613AG 27c512l WS27C010L
    Text: WAFER SCALE § INTEGRATION 3=1E D m ‘î S B ' l b ^ O OOOQb47 Ô ötilAF _ WS27C010L WAFERSCALE INTEGRATION, INC. '" p . 128K X 8 C M O S EPR O M K EY FEATURES High Performance CMOS • Simplified Upgrade Path — 100 ns Access Time


    OCR Scan     		OOOQb47 WS27C010L 27C010 WS27C010L 576-bit MIL-STD-883C smd A18I 27C256L 613AG 27c512l PDF