Untitled
Abstract: No abstract text available
Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function
|
Original
|
PDF
|
78K0R/KE3
16-bit
PD78F1142
PD78F1143
PD78F1144
PD78F1145
PD78F1146
78K0R/KE3
U17854EJ6V0UD00
U17854EJ6V0UD
|
am29f400bb
Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements
|
Original
|
PDF
|
Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
am29f400bb v
am29f400 known good
AM29F400B7
20185
AM29F400BT
|
CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
|
Original
|
PDF
|
Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
|
GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
|
Original
|
PDF
|
S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
|
A29L800
Abstract: A29L800V
Text: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.
|
Original
|
PDF
|
A29L800
KbyteX15
KwordX15
48TFBGA)
A29L800V
|
PEB2255
Abstract: irs5 PXB4219E PXB4220 PXB4220E PXB4221 PXB4221E PXB4219 TINI microcontroller cards
Text: P re li mi na ry D ata S he et , DS 1, J ul y 20 01 IW E 8 In te r wo r k i n g E le m en t f or 8 E 1/ T1 L i ne s P XB 4 2 19 E /P X B 4 22 0 E/ P X B 42 21 E V er s i o n 3. 4 Da ta c o m N e v e r s t o p t h i n k i n g . Edition 2001-07 Published by Infineon Technologies AG,
|
Original
|
PDF
|
D-81541
PEB2255
irs5
PXB4219E
PXB4220
PXB4220E
PXB4221
PXB4221E
PXB4219
TINI microcontroller cards
|
80C186
Abstract: 80C188 R8810LV
Text: RDC R8810LV RISC DSP Controller R8810LV 16-Bit RISC Microcontroller User’s Manual RDC RISC DSP Controller RDC Semiconductor Co., Ltd http:\\www.rdc.com.tw Tel. 886-3-666-2866 Fax 886-3-563-1498 Rev:1.4 RDC Semiconductor Co. Subject to change without notice
|
Original
|
PDF
|
R8810LV
16-Bit
80C186
80C188
R8810LV
|
Untitled
Abstract: No abstract text available
Text: FM22L16 4-Mbit 256 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 16 ❐ Configurable as 512 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes
|
Original
|
PDF
|
FM22L16
151-year
25-ns
55-ns
110-ns
|
UM0560
Abstract: STM8S105x6 STM8L STM8 bootloader STM8S105XX STM8S
Text: UM0560 User manual STM8L/S bootloader 1 Introduction This user manual contains the bootloader specifications for STM8L/S devices which contain a bootloader embedded in the system memory of the device the ROM . Through this firmware, the device memory can be erased and programmed using one of the standard
|
Original
|
PDF
|
UM0560
UM0560
STM8S105x6
STM8L
STM8 bootloader
STM8S105XX
STM8S
|
80C186
Abstract: 80C188 R8810 rdc R8810
Text: RDC R8810 RISC DSP Controller R8810 16-Bit RISC Microcontroller User’s Manual RDC RISC DSP Controller RDC Semiconductor Co., Ltd http:\\www.rdc.com.tw Tel. 886-3-666-2866 Fax 886-3-563-1498 Rev:1.7 RDC Semiconductor Co. Subject to change without notice
|
Original
|
PDF
|
R8810
16-Bit
80C186
80C188
R8810
rdc R8810
|
circuit card assy input filter for miller 200 Dx
Abstract: 64 point radix 2 FFT LM318 list DSP101 74AS20 TTL radix-4 DIT FFT C code TLC32040C TMS320 TMS320C31 TMS320C32
Text: TMS320C3x GeneralĆPurpose Applications User’s Guide 1998 Digital Signal Processing Solutions Printed in U.S.A., January 1998 SDS SPRU194 TMS320C3x General-Purpose Applications User’s Guide Literature Number: SPRU194 January 1998 Printed on Recycled Paper
|
Original
|
PDF
|
TMS320C3x
SPRU194
TMS320C3x
circuit card assy input filter for miller 200 Dx
64 point radix 2 FFT
LM318 list
DSP101
74AS20 TTL
radix-4 DIT FFT C code
TLC32040C
TMS320
TMS320C31
TMS320C32
|
am29LV8000
Abstract: L800DB90VC S29AL008D L800DT S29al008
Text: Am29LV800D Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29AL008D supersedes Am29LV800D and is the factory-recommended migration path for this device. Please refer to the S29AL008D data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
|
Original
|
PDF
|
Am29LV800D
S29AL008D
am29LV8000
L800DB90VC
L800DT
S29al008
|
SST49LF020A
Abstract: No abstract text available
Text: 2 Mbit LPC Flash SST49LF020A SST49LF020A2Mb LPC Flash Data Sheet FEATURES: • LPC Interface Flash – SST49LF020A: 256K x8 2 Mbit • Conforms to Intel LPC Interface Specification 1.0 • Flexible Erase Capability – Uniform 4 KByte Sectors – Uniform 16 KByte overlay blocks
|
Original
|
PDF
|
SST49LF020A
SST49LF020A2Mb
SST49LF020A:
S71206-08-000
SST49LF020A
|
ES29LV400EB-70TGI
Abstract: ES29LV400EB-70TG ES29LV400E BB 555 ES29LV400EB
Text: EE SS II Excel Semiconductor inc. ES29LV400E 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
|
Original
|
PDF
|
ES29LV400E
512Kx
8/256K
125oC
16Kbyte
32Kbyte
64Kbyte
ES29LV400ET
ES29LV400EB
48-pin
ES29LV400EB-70TGI
ES29LV400EB-70TG
ES29LV400E
BB 555
|
|
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are
|
Original
|
PDF
|
DS05-20888-2E
MBM29LV800TE70/90/MBM29LV800BE70/90
MBM29LV800TE/BE
48-pin
MBM29LV800TE/BE
|
FPT-48P-M19
Abstract: FPT-48P-M20 mbm28f800 MBM28F800TA 77ff
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
|
Original
|
PDF
|
DS05-20841-4E
8/512K
9F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
48-pin
44-pin
FPT-48P-M19
FPT-48P-M20
mbm28f800
MBM28F800TA
77ff
|
NCC equivalent
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
|
OCR Scan
|
PDF
|
TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
44-Pin
48-Pin
8-Blf/262144
NCC equivalent
|
ba qu
Abstract: TC58F401
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION
|
OCR Scan
|
PDF
|
TC58F400F
TC58F401F
BITS/262
TC58F400/401
TC58F4
TC58F400)
00000h
01FFFh
02000h
ba qu
TC58F401
|
amd 29F400AB
Abstract: 29F400AT 29F400AB
Text: PR E L IM IN A R Y Am29F400AT/Am29F400AB 4 Megabit 524,288 x S-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory AdVMi“ o Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements
|
OCR Scan
|
PDF
|
Am29F400AT/Am29F400AB
S-Bit/262
16-Bit)
44-pin
48-pin
Am29F400AT/Am
29F400AB
Am29F400T/Am29F400B
18612B.
amd 29F400AB
29F400AT
29F400AB
|
am29f400bb
Abstract: No abstract text available
Text: 'RH .v'IKMF AM Dii Am29F400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit dMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 vott-only operation for read, erase, and program operations — Minimizes system level requirements
|
OCR Scan
|
PDF
|
Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
|
Untitled
Abstract: No abstract text available
Text: Preliminary information Features • O r g a n iz a t io n : 5 1 2 K x 8 o r 2 5 6 K x 16 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 3 S m A m a x im u m re a d c u rre n t - 60 m A m a x im u m p ro g r a m c u rre n t - O n e 16K; tw o 8K; o n e 32K; a n d seven 64K b y te sectors
|
OCR Scan
|
PDF
|
S29F4O0T-55TC
S29F4Q
-150T3
S29F400T-
9F400B
-150SI
S29F400T
-150SI
AS29F400B-5
S29F400T-5
|
Untitled
Abstract: No abstract text available
Text: Hiyli P e r f o r m a n c i 1 •■ AS29F400 A S I 2 K x 8 / 2 S6 K X I 6 SV C M O S F l a s h F F P R O M S I 2 K x 8 / 2 5 6 K x l 6 CMOS Flush FFPROM Prelim inary inform ation Features • Organization: 512KX8 or 256KX16 • Sector architecture • L o w p o w e r c o n s u m p tio n
|
OCR Scan
|
PDF
|
AS29F400
512KX8
256KX16
ip9F400T-1SOTC
AS29F400T-ISOU
AS29F400B-55SC
AS29F400B*
AS29F400B-70SI
AS29F400B-90SC
AS29F400B-90SI
|
Untitled
Abstract: No abstract text available
Text: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES
|
OCR Scan
|
PDF
|
Am29DL162C/Am29DL163C
16-Bit)
29DL162C/Am
29DL163C
|
a19t
Abstract: ba1s 000IH
Text: TOSHIBA TENTATIVE TC58FYT160/B160FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FYT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable
|
OCR Scan
|
PDF
|
TC58FYT160/B
160FT-12
16-MBIT
TC58FYT160/B160
48-pin
a19t
ba1s
000IH
|