H40P
Abstract: NN12 P35-5135-000-200
Text: P35-5135-000-200 HEMT MMIC 0.5W POWER AMPLIFIER, 28GHz Features • • • Gain; 16dB typical @ 28GHz P-1dB; 27dBm typical @ 28GHz 5dB Typical Noise Figure Description The P35-5135-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers
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P35-5135-000-200
28GHz
27dBm
P35-5135-000-200
28GHz
463/SM/02574/000
H40P
NN12
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C 3531
Abstract: No abstract text available
Text: Advance Product Information November 2, 2001 Ka Band Low Noise Amplifier TGA1307-EPU Key Features and Performance • • • • • • 0.25um pHEMT Technology 23-29 GHz Frequency Range 3.1 dB Nominal Noise Figure 28GHz 17 dB Nominal Gain OTOI > 22dBm 5V, 50 mA Self-Bias
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TGA1307-EPU
28GHz
22dBm
EG1307
0007-inch
C 3531
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Sharp amplifier SM 30
Abstract: 84-1LMI NN12 P35-5104-000-200 P35-5114-000-200 bond wire gold
Text: Marconi Optical Components P35-5114-000-200 HEMT MMIC Low Noise Amplifier, 2 - 32GHz Features • Typical 2.2dB Noise Figure @24GHz to 28GHz · 2.36 x 0.94mm Die Size Description The P35-5114-00-200 is a 20-32GHz Gallium Arsenide low noise amplifier. This product is intended for use in fixed-point
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P35-5114-000-200
32GHz
24GHz
28GHz
P35-5114-00-200
20-32GHz
100pF
462/SM/02610/200
Sharp amplifier SM 30
84-1LMI
NN12
P35-5104-000-200
P35-5114-000-200
bond wire gold
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H40P
Abstract: NN12 P35-5136-000-200 MARCONI power
Text: P35-5136-000-200 HEMT MMIC POWER AMPLIFIER, 28GHz Features • • • Gain; 15dB typical @ 28GHz P-1dB; 29dBm typical @ 28GHz 0.20 µm pHEMT technology Description The P35-5136-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers
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P35-5136-000-200
28GHz
29dBm
P35-5136-000-200
28GHz
463/SM/02574/000
H40P
NN12
MARCONI power
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sm 0038
Abstract: sm 0038 data sheet sm 0038 datasheet 84-1LMI NN12
Text: P35-5113-000-200 HEMT MMIC LNA 20 - 32GHz Features • • • Typical 2.1dB Noise Figure @24GHz &28GHz Self Biased Design 2.36 x 0.94mm Die Size Description The P35-5113-000-200 is a 20-32GHz Gallium Arsenide Self-Biased low noise amplifier. This product is intended
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P35-5113-000-200
32GHz
24GHz
28GHz
P35-5113-000-200
20-32GHz
20-32GHz
462/SM/02606/200
sm 0038
sm 0038 data sheet
sm 0038 datasheet
84-1LMI
NN12
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H40P
Abstract: NN12 P35-5126-000-200 25-30GHz
Text: Data sheet HEMT MMIC Driver Amplifier, 25-30GHz Features • Over 22dBm Output Power @ 28GHz • 10dB Gain from 25 to 30GHz The P35-5126-000-200 is a high performance 25-30GHz Gallium Arsenide driver amplifier. This product is intended for use in fixed-point microwave systems and satellite
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25-30GHz
22dBm
28GHz
30GHz
P35-5126-000-200
P35-5126-000-200
462/SM/02348/200
H40P
NN12
25-30GHz
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TGA9070
Abstract: TGA9070-EPU
Text: Advance Product Information TGA9070-EPU 23 GHz to 29 GHz High-Power Amplifier Key Features and Performance Primary Applications • • • • • • LMDS • Point-to-Point Radio 0.25um pHEMT technology 23 GHz to 29 GHz frequency range Nominal Pout of 1 watt 28GHz
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TGA9070-EPU
28GHz)
TGA9070
TGA9070-EPU
400mA
P1d20
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TGA9070
Abstract: No abstract text available
Text: Advance Product Information 23 - 29 GHz High Power Amplifier TGA1088-EPU Key Features and Performance • • • • • • • • 0.25um pHEMT Technology 23 GHz - 29 GHz Frequency Range Nominal 1 Watt 28GHz @ P1dB Nominal Gain of 23 dB OTOI 38 dBm typical (Linear Mode)
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TGA1088-EPU
28GHz)
115mm
047mm
TGA188-EPU
100pF
TGA1088
TGA9070
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mmic n1
Abstract: No abstract text available
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the
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FMM5701X
24GHz
24GHz
18-28GHz
FMM5701X
18-28GHz
mmic n1
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901 704 16 08 55
Abstract: amplifier mmic 576 DC TO 18GHZ RF AMPLIFIER MMIC transistor zo 607 ZO 607 MA A004R AMMP-6425 DB21
Text: AMMP-6425 18-28 GHz 1W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6425 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 18GHz and 28GHz. At 25GHz, it provides 31dBm
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AMMP-6425
AMMP-6425
18GHz
28GHz.
25GHz,
31dBm
AV02-0034EN
901 704 16 08 55
amplifier mmic 576
DC TO 18GHZ RF AMPLIFIER MMIC
transistor zo 607
ZO 607 MA
A004R
DB21
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ka 7575
Abstract: No abstract text available
Text: Advance Product Information May 16, 2000 Ka Band Low Noise Amplifier TGA1307-EPU Key Features and Performance • • • • • • 0.25um pHEMT Technology 23-29 GHz Frequency Range 3.1 dB Nominal Noise Figure 28GHz 17 dB Nominal Gain OTOI > 22dBm 5V, 50 mA Self-Bias
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TGA1307-EPU
28GHz
22dBm
EG1307
0007-inch
ka 7575
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Untitled
Abstract: No abstract text available
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the
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FMM5701X
24GHz
24GHz
18-28GHz
FMM5701X
18-28GHz
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Untitled
Abstract: No abstract text available
Text: AMMP-6425 18-28 GHz 1W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6425 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 18GHz and 28GHz. At 25GHz, it provides 31dBm
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AMMP-6425
AMMP-6425
18GHz
28GHz.
25GHz,
31dBm
AV02-0034EN
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968E
Abstract: No abstract text available
Text: AMMP-6425 18-28 GHz 1W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6425 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 18GHz and 28GHz. At 25GHz, it provides 31dBm
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AMMP-6425
AMMP-6425
18GHz
28GHz.
25GHz,
31dBm
AV02-0034EN
968E
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FMM5701X
Abstract: 18-28GHz
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the
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FMM5701X
24GHz
24GHz
18-28GHz
FMM5701X
18-28GHz
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: Product Datasheet September 26, 2002 27 - 32 GHz 1W Power Amplifier TGA1172-SCC Key Features • • • • • • 0.25 um pHEMT Technology 16 dB Nominal Gain 29 dBm Nominal P1dB 36dBm OTOI typical at 28GHz Nominal Input/Output RL < -10 dB Bias 6 - 7V @ 630 mA
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TGA1172-SCC
36dBm
28GHz
TGA1172-SCC
TGA1172
0007-inch
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84-1LMI
Abstract: NN12 P35-5114-000-200
Text: Data sheet HEMT MMIC LNA 20 - 32GHz Features • Typical 2.2dB Noise Figure @24GHz to 28GHz • 2.36 x 0.94mm Die Size The P35-5114-00-200 is a 20-32GHz Gallium Arsenide low noise amplifier. This product is intended for use in fixedpoint and point to point microwave systems.
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32GHz
24GHz
28GHz
P35-5114-00-200
20-32GHz
P35-5114-000-200
462/SM/02610/200
84-1LMI
NN12
P35-5114-000-200
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901 704 16 08 55
Abstract: AMMP-6425 A004R
Text: AMMP-6425 18-28 GHz, 1W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6425 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 18GHz and 28GHz. At 25GHz, it provides 31dBm
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AMMP-6425
AMMP-6425
18GHz
28GHz.
25GHz,
31dBm
AV02-0034EN
901 704 16 08 55
A004R
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MOC 362
Abstract: H40P NN12 P35-5126-000-200 moc 3200 marconi
Text: Marconi Optical Components P35-5126-000-200 HEMT MMIC Driver Amplifier, 25 - 30GHz Features • Over 22dBm Output Power @ 28GHz · 10dB Gain from 25 to 30GHz · Small 2 x 1mm Die Size Description The P35-5126-000-200 is a high performance 25-30GHz Gallium Arsenide driver amplifier. This product is intended for
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P35-5126-000-200
30GHz
22dBm
28GHz
P35-5126-000-200
25-30GHz
100pF
MOC 362
H40P
NN12
moc 3200
marconi
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Untitled
Abstract: No abstract text available
Text: Advance Product Information Ka Band Low Noise Amplifier Key Features and Performance 0.25um pHEMT Technology 23-29 GHz Frequency Range 3.1 dB Nominal Noise Figure 28GHz 15 dB Nominal Gain OTOI > 22dBm 5V, 50 mA Self-Bias Chip Dimensions 2.54 mm x 1.15 mm TGA1307-EPU
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28GHz
22dBm
TGA1307-EPU
TGA1307-EPU
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Untitled
Abstract: No abstract text available
Text: Product Datasheet 23 - 29 GHz High Power Am plifier TGA9070-SCC Key Features and Performance 0.25um pHEMT Technology 23 GHz - 29 GHz Frequency Range Nominal 1 Watt 28GHz @ P1dB Nominal Gain of 23 dB Bias 7V @ 400 mA Chip Dimensions 4.1 mm x 3.0mm Primary Applications
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TGA9070-SCC
28GHz)
TGA9070-SCC
0007-inch
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Untitled
Abstract: No abstract text available
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1,5dB MAX. @ f=20GHz NF=1.8dB (MAX.) @ f=24GHz NF=2.3dB (MAX.) @ f=28GHz • High Associated Gain: Gas=15.0dB (MIN.) @ f=20GHz Gas=12.0dB (MIN.) @ f=24GHz Gas=9.0dB (MIN.) @f=28GHz
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FMM5701X
24GHz
20GHz
24GHz
28GHz
18-28GHz
FMM5701X
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tico 732
Abstract: 13749 8739 4737
Text: TriQuint f# Advance Product Information SEMICONDUCTOR 23-29 GHz High Power Amplifier Key Features and Performance 0.25um pHEMT Technology TGA9070-EPU Primary Applications • LMDS Nominal Pout of 1 W att 28GHz • Point-to-Point Radio Nominal Gain of 24 dB
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28GHz)
TGA9070-EPU
TGA9070
1246E
1092C
TGA9070-EPU
tico 732
13749
8739
4737
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14141
Abstract: CD005 1160E
Text: TriQuint <+ Advance Product Information SEMiÇONDUC TOR 23 - 29 GHz High Power Amplifier TGA9070-EPU Key Features and Performance 0.25um pHEMT Technology 23 GHz - 29 GHz Frequency Range Nominal 1 W att 28GHz @ P1dB Nominal Gain of 23 dB Bias 7V @ 400 mA
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TGA9070-EPU
28GHz)
TGA9070-EPU
0007-inch
14141
CD005
1160E
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