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    28F0181 Price and Stock

    Laird, A DuPont Business 28F0181-1SR-10

    FERRITE BEAD 115 OHM 3318 1LN
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    DigiKey 28F0181-1SR-10 Cut Tape 119,530 1
    • 1 $0.66
    • 10 $0.465
    • 100 $0.3165
    • 1000 $0.20147
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    28F0181-1SR-10 Reel 117,500 2,500
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    28F0181-1SR-10 Digi-Reel 117,030 1
    • 1 $0.66
    • 10 $0.465
    • 100 $0.3165
    • 1000 $0.20147
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    Newark 28F0181-1SR-10 Cut Tape 5,110 10
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    • 100 $0.363
    • 1000 $0.316
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    Bristol Electronics 28F0181-1SR-10 4,346
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    28F0181-1SR-10 2,696 7
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    • 1000 $0.15
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    28F0181-1SR-10 1,292
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    Quest Components 28F0181-1SR-10 2,156
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    28F0181-1SR-10 245
    • 1 $0.634
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    • 100 $0.3804
    • 1000 $0.317
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    28F0181-1SR-10 108
    • 1 $0.3804
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    • 100 $0.2536
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    Interstate Connecting Components 28F0181-1SR-10 32,062
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    Chip Stock 28F0181-1SR-10 2,500
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    Sager 28F0181-1SR-10 352,500 5,000
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    Laird Performance Material 28F0181-1SR-10

    Ferrite Bead, 3318, 115 Ohm, 10 A, 1 Milliohm - Tape and Reel (Alt: 28F0181-1SR-10)
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    Avnet Americas 28F0181-1SR-10 Reel 14 Weeks 2,500
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    Mouser Electronics 28F0181-1SR-10 50,507
    • 1 $0.59
    • 10 $0.352
    • 100 $0.29
    • 1000 $0.204
    • 10000 $0.193
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    RS 28F0181-1SR-10 Bulk 5,000
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    TTI 28F0181-1SR-10 Reel 92,500 2,500
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    Avnet Abacus 28F0181-1SR-10 Reel 60,000 12 Weeks 2,500
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    Avnet Asia 28F0181-1SR-10 7 Weeks 5,000
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    N/A 28F01811SR10

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    Bristol Electronics 28F01811SR10 298
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    28F0181 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    28F0181-1SR-10 Laird Technologies Ferrite Beads and Chips, Filters, FERRITE 10A 115 OHMS SMD Original PDF

    28F0181 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    28F0181-1SR-10

    Abstract: No abstract text available
    Text: 28F0181-1SR-10 Ω Ω 140 Pb 120 0amp 1amp 2amp 3amp 4amp 5amp Ω 100 80 60 40 20 1 10 100 1000 140 Ω 120 100 80 Z 60 40 20 R XL 1 10 Z 100 R 1000 XL 10000 Steward


    Original     		PDF 28F0181-1SR-10 28F0181-1SR-10

    Untitled

    Abstract: No abstract text available
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928 RF3928280W DS120508

    Untitled

    Abstract: No abstract text available
    Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology   RF OUT VD Pin 2 GND BASE Supports Multiple Pulse


    Original     		PDF RFHA1020 DS120508

    Untitled

    Abstract: No abstract text available
    Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928B DS120503

    Untitled

    Abstract: No abstract text available
    Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928B RF3928B DS120503

    Untitled

    Abstract: No abstract text available
    Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RFHA1025 RFHA1025 96GHz 215GHz DS120613

    SEMICONDUCTOR J598

    Abstract: No abstract text available
    Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse


    Original     		PDF RFHA1023 RFHA1023 DS120508 SEMICONDUCTOR J598

    GaN hemt

    Abstract: power transistor gan s-band air surveillance system diagram using radar
    Text: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928280 RF3928 RF3928 DS110720 GaN hemt power transistor gan s-band air surveillance system diagram using radar

    RFHA1023

    Abstract: SEMICONDUCTOR J598
    Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation


    Original     		PDF RFHA1023 RFHA1023 DS110630 SEMICONDUCTOR J598

    ATC100B620

    Abstract: L22 amplifier Gan hemt transistor RFMD
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928280W RF3928 RF3928 DS120119 ATC100B620 L22 amplifier Gan hemt transistor RFMD

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium


    Original     		PDF RFHA1027 RFHA1027 DS131216

    Untitled

    Abstract: No abstract text available
    Text: RF3928 RF3928 280W GaN Wide-Band Pulsed Power Amplifier 2.8GHz to 3.4GHz The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band pulsed radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced high


    Original     		PDF RF3928 RF3928 DS130820

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium


    Original     		PDF RFHA1027 RFHA1027 DS131220

    Untitled

    Abstract: No abstract text available
    Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RFHA1025 RFHA1025 96GHz 215GHz DS120928

    rfha1020

    Abstract: No abstract text available
    Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features       Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Optimized Evaluation Board Layout for 50Operation


    Original     		PDF RFHA1020 RFHA1020 DS110719

    atc100a150

    Abstract: power transistor gan s-band
    Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928B RF3928B DS120503 atc100a150 power transistor gan s-band

    thermocouple gaas

    Abstract: No abstract text available
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology    RF IN


    Original     		PDF RF3928280W RF3928 RF3928 DS110317 thermocouple gaas

    Untitled

    Abstract: No abstract text available
    Text: Ferrite EMI SMT Bead Assemblies • 10 amps continuous operating current capability • Broadband 28F & low frequency (35F) parts available • Lead free & RoHS compliant • Very low DCR SMT Bead Assemblies provide EMI filtering in circuits carrying up to 10 amps continuous current. Products are


    Original     		PDF 28F0121-0SR-10 28F0121-1SR-10 28F0181-1SR-10 35F0121-0SR-10 35F0121-1SR-10

    28f0181

    Abstract: 28F0181-1SR-10 CART181
    Text: PHYSICAL DIMENSIONS: 28F0181-1SR-10 ELECTRICAL CHARACTERISTICS: A 4 .5 7 [ . 1 8 0 ] ± 0 .0 8 [ . 0 0 3 ] B 2 .5 4 [ . 1 0 0 ] ± 0 .0 8 [ . 0 0 3 ] Bi 3 .0 5 [ . 1 2 0 ] ± MAX N o m in a l C 8.51 [.3 3 5 ] ± 0 .2 3 [ . 0 0 9 ] M in im u m - 87 Ci 9 .5 3 [ . 3 7 5 ]


    OCR Scan     		PDF 28F0181-1SR-10 25MHz 100MHz E4991A 6092A 28F0181 -1SR-10 28F0181â 28f0181 28F0181-1SR-10 CART181

    Untitled

    Abstract: No abstract text available
    Text: PHYSICAL DIMENSIONS: 28F0181-1SR-10 ELECTRICAL CHARACTERISTICS: A 4 .5 7 [.1 8 0 ] ± 0 .0 8 [.0 0 3 ] B 2 .5 4 [.1 0 0 ] ± 0 .0 8 [.0 0 3 ] Bi 3 . 0 5 [ . 1 2 0 ] ± MAX Nominal 0 .2 3 [.0 0 9 ] Minim um - 87 MAX Maximum — 144 C 8.51 ± [.3 3 5 ] + Ci 9 . 5 3 [ . 3 7 5 ]


    OCR Scan     		PDF 28F0181-1SR-10 25MHz 100MHz CART181--13. 1SR-10 28F0181 --1SR--10--2 E4991A 6092A H0181

    ysic

    Abstract: No abstract text available
    Text: PH YSIC AL DIMENSIONS: 28F0181-1SR-10 ELECTRICAL CHARACTERISTICS: A 4.57 [.180] ± 0.08 [.003] B 2.54 [.100] ± 0.08 [.003] Bi 3.05 [.120] ± MAX Nominal C 8.51 [.335] ± 0.23 [.009] Minim um - 87 Ci 9.53 [.375] + MAX M axim um - 144 ± 0.51 @ DCR 25MHz 100MHz


    OCR Scan     		PDF 28F0181-1SR-10 25MHz 100MHz CART181-- E4991A 6092A 28F0181--1SR H0181 ysic

    Untitled

    Abstract: No abstract text available
    Text: PH YSIC AL DIMENSIONS: 28F0181-1SR-10 ELECTRICAL CHARACTERISTICS: A 4.57 [.180] ± 0.08 [.003] B 2.54 [.100] ± 0.08 [.003] Bi 3.05 [.120] ± MAX Nominal 0.23 [.009] Minim um - 87 MAX Maximum — 144 ± C 8.51 [.335] + Ci 9.53 [.375] [.0 6 0 ] DOR Rated C u rrent


    OCR Scan     		PDF 28F0181-1SR-10 25MHz 100MHz CART181-- E4991A H0181

    28T0157

    Abstract: Chip Ferrite Beads For GHz Range Noise Suppressor CM501 b0735 HI1206T161 HR2220V801 HI1206N101 A-0393 transformer eaton el 198 CM3032V301
    Text: 1 ' TECHNICALREFERENCELIBRARY D0N0TREM0VE . rf Ir- i1 L.1 • § « s r— j k\ ISrjï I!k\J1rB1i 1u'9t Mi, * ?<rmk m y & .~ r 'j. 1 fj -f —J _ / ^ “ l* -yM Ferrite Solutions for Printed C ircuit Boards Cables and Connectors Ninth Edition ISO 9001 and QS 9000 Certified


    OCR Scan     		PDF