28F0181 Search Results

28f0181

Abstract: 28F0181-1SR-10 CART181
Contextual Info: PHYSICAL DIMENSIONS: 28F0181-1SR-10 ELECTRICAL CHARACTERISTICS: A 4 .5 7 [ . 1 8 0 ] ± 0 .0 8 [ . 0 0 3 ] B 2 .5 4 [ . 1 0 0 ] ± 0 .0 8 [ . 0 0 3 ] Bi 3 .0 5 [ . 1 2 0 ] ± MAX N o m in a l C 8.51 [.3 3 5 ] ± 0 .2 3 [ . 0 0 9 ] M in im u m - 87 Ci 9 .5 3 [ . 3 7 5 ]

Contextual Info: PHYSICAL DIMENSIONS: 28F0181-1SR-10 ELECTRICAL CHARACTERISTICS: A 4 .5 7 [.1 8 0 ] ± 0 .0 8 [.0 0 3 ] B 2 .5 4 [.1 0 0 ] ± 0 .0 8 [.0 0 3 ] Bi 3 . 0 5 [ . 1 2 0 ] ± MAX Nominal 0 .2 3 [.0 0 9 ] Minim um - 87 MAX Maximum — 144 C 8.51 ± [.3 3 5 ] + Ci 9 . 5 3 [ . 3 7 5 ]

ysic

Contextual Info: PH YSIC AL DIMENSIONS: 28F0181-1SR-10 ELECTRICAL CHARACTERISTICS: A 4.57 [.180] ± 0.08 [.003] B 2.54 [.100] ± 0.08 [.003] Bi 3.05 [.120] ± MAX Nominal C 8.51 [.335] ± 0.23 [.009] Minim um - 87 Ci 9.53 [.375] + MAX M axim um - 144 ± 0.51 @ DCR 25MHz 100MHz

Contextual Info: PH YSIC AL DIMENSIONS: 28F0181-1SR-10 ELECTRICAL CHARACTERISTICS: A 4.57 [.180] ± 0.08 [.003] B 2.54 [.100] ± 0.08 [.003] Bi 3.05 [.120] ± MAX Nominal 0.23 [.009] Minim um - 87 MAX Maximum — 144 ± C 8.51 [.335] + Ci 9.53 [.375] [.0 6 0 ] DOR Rated C u rrent

28F0181-1SR-10

Contextual Info: 28F0181-1SR-10 Ω Ω 140 Pb 120 0amp 1amp 2amp 3amp 4amp 5amp Ω 100 80 60 40 20 1 10 100 1000 140 Ω 120 100 80 Z 60 40 20 R XL 1 10 Z 100 R 1000 XL 10000 Steward

Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology   RF OUT VD Pin 2 GND BASE Supports Multiple Pulse

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

SEMICONDUCTOR J598

Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse

GaN hemt

Abstract: power transistor gan s-band air surveillance system diagram using radar
Contextual Info: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

RFHA1023

Abstract: SEMICONDUCTOR J598
Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation

ATC100B620

Abstract: L22 amplifier Gan hemt transistor RFMD
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RF3928 RF3928 280W GaN Wide-Band Pulsed Power Amplifier 2.8GHz to 3.4GHz The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band pulsed radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced high

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium

Contextual Info: RFHA1020 RFHA1020 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

rfha1020

Contextual Info: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features       Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Optimized Evaluation Board Layout for 50Operation

atc100a150

Abstract: power transistor gan s-band
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

thermocouple gaas

Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology    RF IN

28T0157

Abstract: Chip Ferrite Beads For GHz Range Noise Suppressor CM501 b0735 HI1206T161 HR2220V801 HI1206N101 A-0393 transformer eaton el 198 CM3032V301
Contextual Info: 1 ' TECHNICALREFERENCELIBRARY D0N0TREM0VE . rf Ir- i1 L.1 • § « s r— j k\ ISrjï I!k\J1rB1i 1u'9t Mi, * ?<rmk m y & .~ r 'j. 1 fj -f —J _ / ^ “ l* -yM Ferrite Solutions for Printed C ircuit Boards Cables and Connectors Ninth Edition ISO 9001 and QS 9000 Certified

Contextual Info: Ferrite EMI SMT Bead Assemblies • 10 amps continuous operating current capability • Broadband 28F & low frequency (35F) parts available • Lead free & RoHS compliant • Very low DCR SMT Bead Assemblies provide EMI filtering in circuits carrying up to 10 amps continuous current. Products are