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    28F10 Search Results

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    28F10 Price and Stock

    CIT Relay & Switch CT1102PS2.8F100

    SWITCH TACTILE SPST-NO 0.05A 50V
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    DigiKey CT1102PS2.8F100 Bulk 1,998 1
    • 1 $0.23
    • 10 $0.226
    • 100 $0.1938
    • 1000 $0.16422
    • 10000 $0.13703
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    CIT Relay & Switch CT1102S2.8F100

    SWITCH TACTILE SPST-NO 0.05A 50V
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    DigiKey CT1102S2.8F100 Bulk 1,970 1
    • 1 $0.26
    • 10 $0.214
    • 100 $0.1736
    • 1000 $0.14982
    • 10000 $0.11855
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    CIT Relay & Switch CS1102S2.8F100J

    SWITCH TACTILE SPST-NO 0.05A 50V
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    DigiKey CS1102S2.8F100J Digi-Reel 1,390 1
    • 1 $0.43
    • 10 $0.415
    • 100 $0.3391
    • 1000 $0.30764
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    CS1102S2.8F100J Cut Tape 1,390 1
    • 1 $0.43
    • 10 $0.415
    • 100 $0.3391
    • 1000 $0.30764
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    CS1102S2.8F100J Reel 700 700
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    • 1000 $0.26557
    • 10000 $0.21309
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    CIT Relay & Switch CS1102S2.8F100

    SWITCH TACTILE SPST-NO 0.05A 50V
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    DigiKey CS1102S2.8F100 Cut Tape 1,370 1
    • 1 $0.31
    • 10 $0.3
    • 100 $0.2578
    • 1000 $0.23504
    • 10000 $0.23504
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    CS1102S2.8F100 Digi-Reel 1,370 1
    • 1 $0.31
    • 10 $0.3
    • 100 $0.2578
    • 1000 $0.23504
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    CS1102S2.8F100 Reel 700 700
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    • 10000 $0.15928
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    CTS Corporation 450T328F104A1C1

    POT 100K OHM 1/2W CARBON LINEAR
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    DigiKey 450T328F104A1C1 Bulk 1,102 1
    • 1 $5.75
    • 10 $4.614
    • 100 $3.6954
    • 1000 $2.94857
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    Mouser Electronics 450T328F104A1C1 1,370
    • 1 $7.53
    • 10 $7.26
    • 100 $5.38
    • 1000 $3.9
    • 10000 $3.9
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    TME 450T328F104A1C1 322 11
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    • 100 $4.0032
    • 1000 $3.5277
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    Avnet Abacus 450T328F104A1C1 10 Weeks 1,000
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    IBS Electronics 450T328F104A1C1 322 251
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    Find more 28F10 price and stock on Findchips.com

    28F10 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    28F101 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    28F102 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    28F10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 28F102 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 45/55/70/90 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase –Active: 30 mA max CMOS/TTL levels –Standby: 1 mA max (TTL levels)


    Original     		PDF CAT28F102 40-pin 44-pin 28F102 500/Reel 125oC CAT28F102NI-90T 5038-0A

    winbond 25080

    Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
    Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010


    Original     		PDF 2732B 27C100 27HB010 27C256 27HC64 27C128 27C040 7128A winbond 25080 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB

    28f1000

    Abstract: M-Systems pcmcia pcm210 fdd power connector tffs PCM-211 EMM386 pcmcia ethernet TRUEFFS EPROM M-Systems
    Text: PCM-3110C/3112 PCM-220D1 User Manual P/N: 2006311001 Copyright Notice This document is copyrighted, 1997. All rights are reserved. The original manufacturer reserves the right to make improvements to the products described in this manual at any time without notice.


    Original     		PDF PCM-3110C/3112 PCM-220D1) 1/95/NT, CARDMASTER-104 28f1000 M-Systems pcmcia pcm210 fdd power connector tffs PCM-211 EMM386 pcmcia ethernet TRUEFFS EPROM M-Systems

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    M5m27c201j

    Abstract: 28F101 w49v002fap W49F002UP-B intel 28F256 gang capacitor am29f020 Fujitsu MBM27C1000 gang capacitor pin details M5M27C101J
    Text: PRODUCT DATA SHEET AD63 479-901 and AD51 (479-810) Package Converters for E(E)PROMs and FLASH etc (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" Miscellaneous AD63 32 32 01 P .6 Clamshell Product Code Pins on skt Pins on Base


    Original     		PDF Am27C010- Am27C010-J Am29F010B-J Am29LV010B-J Am27C020-J Am29F002B-J Am29F002T-J Am27C040-J Am27H010 M5m27c201j 28F101 w49v002fap W49F002UP-B intel 28F256 gang capacitor am29f020 Fujitsu MBM27C1000 gang capacitor pin details M5M27C101J

    28f1000

    Abstract: 1 MEGA OHM RESISTOR MX28F1000P
    Text: INDEX 28F1000P 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8-bit organization • Fast access time: 70ns Vcc:5V±5%; CL:35pF 90/120ns(Vcc:5V±10%; CL:100pF) • Low power consumption – 50mA maximum active current – 100uA maximum standby current


    Original     		PDF MX28F1000P 90/120ns 100pF) 100uA 16-KB 100mA Dec/26/1996 JAN/19/1999 PM0340 28f1000 1 MEGA OHM RESISTOR MX28F1000P

    flash jedec dip 32-pin

    Abstract: MSM28F101
    Text: O K I semiconductor MSM2 8 F101 1 M BIT 128K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION T he M S M 28F101 is a high speed 128K x 8-bit Flash erasable and electrically reprogram m able m em ory, ideally suited for system s requiring on-board code updates. Flash erasable m eans an


    OCR Scan     		PDF MSM28F101 MSM28F101 32-Pin l/0al/041/05 flash jedec dip 32-pin

    28F101

    Abstract: No abstract text available
    Text: n = 7 ^7#» S G S -T H O M S O N M 28F101 I M f l S lg ( 5 | g lllI M ( 0 ) lì ilH ( 5 g 1 Megabit (128K x 8, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 70ns ■ LOW POWER CONSUMPTION - Standby Current: 100|oA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE


    OCR Scan     		PDF 28F101 PDIP32 PLCC32 TSOP32 M28F101 28F101

    Untitled

    Abstract: No abstract text available
    Text: r= 7 M 28F101B M 28V101B S G S -T H O M S O N CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY ADVANCE DATA • FAST ACCESS TIMES - 60ns fo r M 28F101B version - 150ns for M 28V101 B version ■ LOW POWER CONSUMPTION - Standby Current: 100jiA Max ■ 10,000 PROGRAM/ERASE CYCLES


    OCR Scan     		PDF 28F101B 28V101B 150ns 28V101 100jiA M28V101B 28F101B, M28F101B,

    m5M28F102

    Abstract: COMMAND40 UNICOM Electric 28F102P
    Text: MITSUBISHI LSIs M5#tô8F102P,FP,J,VP,RV- 10,- 12,- 15 V*vi 048576- BIT 65536- WORD BY 16-BIT CM0S FLASH MEMORY -DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M itsubishi M 5M 28F102P, FP, J, VP, RV are high-speed 1 0 4 8 5 7 6 -b it CMOS Flash Memories. They are suitable for


    OCR Scan     		PDF 8F102P 16-BIT 28F102P, 40pin 44pin m5M28F102 COMMAND40 UNICOM Electric 28F102P

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M 5M 28F 102A F P , J , V P , R V * - 85,-10 1048576-BIT 65536-WORD BY 16-BIT CMOS FLASH MEMORY DESCRIPTION The MITSUBISHI M 5M 28F102A is high-speed 1048576-bit CMOS Flash Memory. This is suitable for the applications with m icro­ processor or m icro-controller w here on-board reprogram m ing is


    OCR Scan     		PDF 1048576-BIT 65536-WORD 16-BIT) 28F102A 1048576-bit 40pin 44pin M5M28F102AFP

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON M 28F101A M 28V101A CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY PR O D U C T C O N C E PT MEMORY CHIP ERASE SUPPLY VOLTAGE in READ OPERATION - 5V ± 10% for 28F101A version - 3.3V ± 0.3V for M28V101A version 12V PROGRAMMING VOLTAGE PROGRAM/ERASE CYCLES


    OCR Scan     		PDF 28F101A 28V101A M28F101A M28V101A 150ns M28F101A,

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI MICROCOMPUTERS 3886 Group 4\P so'"®9 S IN G L E -C H IP 8 -B IT C M O S M IC R O C O M P U T E R F LA S H M E M O R Y V E R S IO N DESCRIPTION • Power dissipation The 3886 group is the 8-bit m icrocom puter based on the 740 fa m ­ In high-speed m ode . 40 mW


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 28F102 L icen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 55/70/90/100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)


    OCR Scan     		PDF CAT28F102 -40-pin -44-pin 28F102A 125oC CAT28F102NI-90TE7

    XcxxX

    Abstract: m5m28F101J 28F101 M5M28F101
    Text: 28F101 J,VP, RV-15I MITSUBISHI LSIs , 'P 0 - 1048576-BIT 131072-WORD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M itsubishi M 5 M 28F 10 1 J , VP, R V - 151 are high -spe ed 1 0 4 8 5 7 6 -b it CMOS Flash Memories. They are suitable fo r


    OCR Scan     		PDF M5M28F101 RV-15I 1048576-BIT 131072-WORD 28F101 32pin M5M28F101J, XcxxX m5m28F101J

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    M28F101

    Abstract: PDIP32 PLCC32
    Text: SGS-THOMSON ^ 7 # 28F101 M g ^ ( 5 i[L i( g T M 5 M ( g S CMOS 1 Megabit (128K x 8) FLASH MEMORY ADVANCE DATA • FAST ACCESS TIM E: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE


    OCR Scan     		PDF M28F101 100ns PDIP32 PLCC32 PTS032 M28F101 PDIP32 PLCC32

    28F1000

    Abstract: 28F1000PC 28f1000p MX28F1000 MXIC MX
    Text: m PKELIIflilOliiARV 28F1000 A MACDOWX. 1M-BIT *l 28K x 8 CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8-bit organization • Fast access time: 90/120/150 ns • Low power consumption - 50mA maximum active current


    OCR Scan     		PDF MX28F1000 100mA 10OOQC-12 10OOQC-15 28F1000T 28F1000TC 28F1000R 28F1000 28F1000PC 28f1000p MX28F1000 MXIC MX

    PP5V

    Abstract: M5M28F101AFP 708-8034
    Text: K MITSUBISHI LSIs _ ' M 5 M 2 8 F 1 0 1 _ A F P , J , V P , R V - 8 5 , - 1 0 , - 1 2 1048576-BIT 131072-WQRD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION The MITSUBISHI 28F101A is hlgh-speei 1048576-bit CMOS Flash Memories. This is suitable for the api lications with micro­


    OCR Scan     		PDF 1048576-BIT 131072-WQRD M5M28F101A 1048576-bit 32pin --A14 MD5-MEM-05-6/95-500 PP5V M5M28F101AFP 708-8034

    CP3220

    Abstract: No abstract text available
    Text: 28F101 Series 1M 128K x 8-bit Flash Memory • DESCRIPTION The Hitachi 28F101 is a 1-M egabit CM OS Flash M em ory organized as 131,072 x 8-bit. The 28F101 is c a p a b le o f in -s y s te m e le c tric a l c h ip e ra s u re and reprogramming. The 28F101 programs and erases data with a 12 V


    OCR Scan     		PDF HN28F101 HN28F101: CP3220

    28F101

    Abstract: 013d01 M28F101
    Text: / = T SCS-THOMSON ^ 7 # ll ra®[l[L[iOT®R!lD i 28F101 1 Mb (128K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING • ■ ■ ■ ■ ■ ■ ■ ■ - 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10|iS typical


    OCR Scan     		PDF M28F101 PDIP32 PLCC32 M28F101 ar28F101 PDIP32 PLCC32 28F101 013d01

    intel 486 dx 33mhz

    Abstract: 85C22V10 INTEL 486 Dx processor 01BFFFFFH SX33 486 DX2 component 486 SX
    Text: TECHNICAL PAPER Interfacing the 28F016XS to the Intel486 Microprocessor Family KEN MCKEE TECHNICAL MARKETING ENGINEER PHILIP BRACE APPLICATIONS ENGINEER December 1995 tP> [F3 ® y ST r [ P K E W Q E W Order Number: 297504-003 I 5'25 INTERFACING THE 28F016XS TO THE Intel486™


    OCR Scan     		PDF 28F016XS Intel486TM 28F016XS/INTEL486TM Intel486 intel 486 dx 33mhz 85C22V10 INTEL 486 Dx processor 01BFFFFFH SX33 486 DX2 component 486 SX

    Untitled

    Abstract: No abstract text available
    Text: 5 28F102 Ï. 1 Mbit 64Kb x16, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 1O^is typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION - Stand-by Current: 5 ^A typical 10,000 ERASE/PROGRAM CYCLES


    OCR Scan     		PDF M28F102 0020h 0050h PLCC44 M28F102