TM27C512
Abstract: No abstract text available
Text: _ M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100jiA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V
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M27C512
100jiA
FDIP28W
PDIP28
M27C512
TM27C512
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PDF
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Untitled
Abstract: No abstract text available
Text: M $ EPROMs ic r o c h ip EPROM Selection Guide CMOS EPROMs TEMP RANGE STANDBY CURRENT J,K,L,P,SO,TS C,l 2mA/100nA J,K,L.P,SO C,l 2mA/100nA +5V J,K,L,P,SO,TS,VS C,I,E 2mA/100jiA 90-200 +5V J,K,L,P,SO,TS,VS C,I,E 2mA/100|iA 70-150 +5V J,K,L,P,SO,TS,VS C,I,E
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2mA/100nA
2mA/100jiA
2mA/100
2mA/30
1mA/100
2mA/100tiA
27C64
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Untitled
Abstract: No abstract text available
Text: r= 7 M 28F101B M 28V101B S G S -T H O M S O N CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY ADVANCE DATA • FAST ACCESS TIMES - 60ns fo r M 28F101B version - 150ns for M 28V101 B version ■ LOW POWER CONSUMPTION - Standby Current: 100jiA Max ■ 10,000 PROGRAM/ERASE CYCLES
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28F101B
28V101B
150ns
28V101
100jiA
M28V101B
28F101B,
M28F101B,
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Untitled
Abstract: No abstract text available
Text: P4C1256L LOW POWER 32K x 8 STATIC CMOS RAM à - FEATURES • Vcc Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100jiA/100|iA ■ Access Times —55/70 (Commercial or Industrial)
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P4C1256L
70mA/85mA
100jiA/100
144-bit
32Kx8.
1256L
1256L
-55PC
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PDF
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Untitled
Abstract: No abstract text available
Text: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLYVOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: - Active Current 70m A at 10MHz - Stand by Cu rrent 100jiA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 1OO^s/byte (typical)
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M27C4002
256Kb
10MHz
100jiA
0020h
0044h
IP40W
PDIP40
M27C4002
FDIP40W
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PDF
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M28F102
Abstract: PLCC44 A1006
Text: /T 7 S G S -T H O M S O N M28F102 ^7m» ! ÆD gfâ(S!ËiLl5(@Î.rl}3(Q)lfSDÊi 1 Megabit (64K x 16, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 90ns - LOW POWER CONSUMPTION - Standby Current: 100jiA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE
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M28F102
100jiA
PLCC44
TSOP40
M28F102
TSOP40
7t12I1237
A1006
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PDF
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Untitled
Abstract: No abstract text available
Text: y M U N ITR G D E UCC5622 PRELIMINARY 27 - Line SCSI Terminator With Split Disconnect DESCRIPTION FEATURES Complies with SCSI, SCSI-2, SCSI-3 and FAST-20 Ultra Standards 2.5pF.Channel Capacitance During Disconnect 100jiA Supply Current in Disconnect Mode
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UCC5622
FAST-20
100jiA
UCC5622
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PDF
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KM61257AL
Abstract: No abstract text available
Text: KM61257A/KM61257AL CMOS SRAM 2 5 6 K x 1 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 25,35,45ns max. • Low Power Dissipation Standby (TTL) : 3 mA (max.) (CMOS): 2mA (max.) : 100jiA (max.) L-Version Operating : 100 mA (max.) • Single 5 V ± 1 0 % Power Supply
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KM61257A/KM61257AL
100jiA
KM61257AP/ALP:
24-pin
KM61257AJ/ALJ:
KM61257A/AL
144-bit
KM61257AL
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PDF
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Untitled
Abstract: No abstract text available
Text: MXIC M X 28F002T/B 2 M - B I T J 2 5 6 K x 8 C M O S FLA SH M E M O R Y FEATURES 262,144x8 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100jiAmaximum standby current Programming and erasing voltage 12V ± 5%
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MX28F002T/B
144x8
70/90/120ns
100jiAmaximum
16K-Byte
96K-Byte
128K-Byte
100mA
QGQ117ti
MX2SF002T/B
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PDF
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Untitled
Abstract: No abstract text available
Text: BURR - BROWN XTR112 XTR114 4-20mA CURRENT TRANSMITTERS with Sensor Excitation and Linearization FEATURES APPLICATIONS • LOW UNADJUSTED ERROR INDUSTRIAL PROCESS CONTROL • PRECISION CURRENT SOURCES XTR112: Two 250|iA XTR114: Two 100jiA FACTORY AUTOMATION
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XTR112
XTR114
4-20mA
XTR112:
XTR114:
100jiA
Pt1000
30nAp-p
110dB
SO-14
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PDF
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Untitled
Abstract: No abstract text available
Text: /T T *JW, S C S -T H O M S O N Hn»[llLll gra E!IO®i M27C4001 4 Megabit (512Kx 8 UV EPROM and OTP EPROM • FAST ACCESS TIME: 55ns ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA at 5MHz - Standby Current 100jiA ■ PROGRAMMING VOLTAGE: 12.75V
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M27C4001
512Kx
100jiA
48sec.
M27C4001
TSOP32
D7flfl72
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PDF
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Untitled
Abstract: No abstract text available
Text: P tF S IL C llB K ^ Í P lV MXIC M X28F2000P 2M-BITÍ256K x 8 CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 90/120 ns • Low power consumption - 50mA maximum active current - 100jiA maximum standby current • Programming and erasing voltage 12V ± 5%
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MX28F2000P
100jiA
16-KB
100mA
MX28F2000PTC-90C4
MX28F2000PTC-12C4
MX28F2000PRC-90C4
MX28F2000PRC-12C4
MX28F2000PPC-90C4
150ns
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PDF
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82HS641
Abstract: 82HS641B/BJA 82HS641B GDFP2-F28 82HS641A 256 x 4 TTL PROM Memory with 3-state outputs
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 64K-bit TTL bipolar PROM 8192 x 8 82HS641A/B FEATURES • Random logic • Address access time: 82HS641A = 55ns max 82HS641B = 45ns max • Code conversion • Input loading: -100jiA max
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64K-bit
82HS641A/B
82HS641A
82HS641B
-100jiA
82HS641
500ns
7110aEb
82HS641B/BJA
82HS641B
GDFP2-F28
82HS641A
256 x 4 TTL PROM Memory with 3-state outputs
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PDF
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AF5A
Abstract: No abstract text available
Text: M X23 C 40 0 0 4 M«rT[S1 8 K x 8 C M O S M A S K R O M FEATURES • • • • • • Operating current: 40m A • Standby current: 100jiA • Package type: - 32 pin plastic DIP - 32 pin plastic SOP 512K x 8 organization Single +5V power supply Fast access time: 100/120/150/200ns max)
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100/120/150/200ns
100jiA
100/120/150/200n
i000QC-12
MX23C4000T
MX23C4000PC-15
MX23C4000MC-15
MX23C4000QC-15
MX23C4000TC-15
32Pln
AF5A
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PDF
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Untitled
Abstract: No abstract text available
Text: A p p l ic a t io n N o t e and D ev elo pm en t S y stem A V A I L A B L E AN65 • LAPKIT DEMO i m LapKit X88C75 SLIC E2 Microperipheral Port Expander and E2 Memory FEATURES — Low Power • 60mA Active • 100jiA Standby • PDIP, PLCC, and TQFP Packaging Available
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X88C75
100jiA
0G04TD1
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PDF
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VQ1000
Abstract: vq1000n6
Text: VQ1000 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Inform ation BV dss / Order Num ber / Package b v dgs ^DS ON (max) ^D(ON) (min) 14-Pin P-DIP 14-Pin C-DIP* 60V 5.5Q 0.5A VQ1000N6 VQ1000N7 * 14 pin side brazed ceram ic DIP Advanced DMOS Technology
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VQ1000
14-Pin
VQ1000N6
VQ1000N7
VQ1000
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PDF
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Untitled
Abstract: No abstract text available
Text: 64-Channel Serial To Parallel Converter With High Voltage Push-Pull Outputs Ordering Information Package Options Device Recommended Operating Vpp Max 80-Lead Quad Cerpak Gullwing 80-Lead Quad Plastic Gullwing 80-Lead 35mm TAB Tape Die HV34 180V HV3418DG HV3418PG
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64-Channel
80-Lead
HV3418DG
HV3418PG
HV3418T
HV3418X
12MHz
V01JT41
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PDF
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IC CD 3102
Abstract: 2SC4451 cd 3102
Text: Ordering num ber : EN3102 No.3102 r _ 2 S C 4 4 5 1 NPN Triple Diffused Planar Silicon Transistor High-Voltage Switching Applications F eatures • High breakdown voltage • Small c0b • Wide ASO • High reliability Adoption of II VP process
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EN3102
2SC4451
IC CD 3102
cd 3102
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PDF
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TC54512AP-15
Abstract: No abstract text available
Text: TOSHIBA TC54512AP-15.-20 TC54512AF-15.-20 SILICON STACKED GATE CMOS 65,536 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY Description The TC54512AP/AF is a 65,536 word x 8 bit CMOS one tim e programm able read only m em ory m olded in a 28-pin plastic
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OCR Scan
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TC54512AP-15
TC54512AF-15
TC54512AP/AF
28-pin
100jiA.
TC57512AD
TC54512AP/
TC54512AP/AF.
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PDF
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b13s7
Abstract: No abstract text available
Text: ISOCOfl COMPONENTS LTD 45E » • HfiflbSlQ 0Q0D23S fi « I S O T -4 1 -7 3 lf = 20mA < •r V b v ceo 2V Ij.= 1mA m O O VF o Ui Characteristics CD TRANSISTO R FAM ILY VCE|SAT| lp =100uA v CE= io v Test L -0 VCE SAT> lF = 20mA Ip= 20mA Ip= 20mA lc =40pA lc =125 iA 1c =175nA VCE=10V
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OCR Scan
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0Q0D23S
175nA
100uA
813S3
B13S5
B13S7
ISTS823A
ISTS824A
ISTS832S
ISTS832SD
b13s7
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS ICs for Communications RF/IF Double PLL Frequency Synthesizer PM B2347 Version 1.1 Preliminary Specification 27 p a g e s in cl. th is p a g e 05.99 Edition 08.98 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, BalanstraBe 73,
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B2347
900MHz,
200kHz,
P-TSSOP-20
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PDF
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74LVT16273ADGG
Abstract: 74LVT16273ADL LVT16273A LVT16273
Text: Philips Semiconductors Low Voltage Products Preliminary specification 3.3V ABT 16-bit D-type flip-flop FEATURES _ 74LVT16273A • No bus current loading when output is tied to 5V bus • 16-bit D-type edge triggered flip-flops • Output capability: +64mA/-32mA '
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16-bit
74LVT16273A
64mA/-32mA
500mA
74LVT16
10MHz
500ns
7110a2t,
075flflD
74LVT16273ADGG
74LVT16273ADL
LVT16273A
LVT16273
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PDF
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8002 1011 amplifier
Abstract: Power AMPLIFIER 6012 AM6012F OBG analog Philips OR Mullard CRT FOR OSCILLOSCOPES AM6012 AM6012D HTL LOGIC
Text: Product specification Philip« Semiconductors Linear Products 12-Bit multiplying D/A converter AM6012 PIN CONFIGURATION DESCRIPTION The AM6012 12-bit multiplying Digital-to-Analog converter provides high-speed and 0.025% differential nonlinearity over its full
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OCR Scan
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12-Bit
AM6012
AM6012
peak-to-200
NE529
383ns
705ns
8002 1011 amplifier
Power AMPLIFIER 6012
AM6012F
OBG analog
Philips OR Mullard CRT FOR OSCILLOSCOPES
AM6012D
HTL LOGIC
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PDF
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2N4260
Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
Text: s[^pT e x a s Discrete Semiconductors In s tru m e n ts Polarity High Current NPN Amplifiers Device Type Case Maximum ratings BV BV BV CBO CEO EBO ICM mA V V V hFE1 hFE2 1C fT 1C mA min. min. max. MHz max. mA 250 250 300 1000 1000 1000 20 25 25 — 1000 1000
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BFT39
BFT29
BFT40
BFT30
BFT41
BFT31
BFY50
BFT53
BFY51
BFT54
2N4260
2N3829
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PDF
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