IR Receiver Module
Abstract: TSOP4038
Text: TSOP4038 Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals • Shielding against EMI 1 • Supply voltage: 2.7 V to 5.5 V
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TSOP4038
2002/95/EC
2002/96/EC
TSOP4038
18-Jul-08
IR Receiver Module
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TSOP4038
Abstract: ir receiver extended range ir receiver module TSAL6200
Text: TSOP4038 Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals e3 • Shielding against EMI • Supply voltage: 2.7 V to 5.5 V
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TSOP4038
2002/95/EC
2002/96/EC
TSOP4038
18-Jul-08
ir receiver extended range
ir receiver module
TSAL6200
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Untitled
Abstract: No abstract text available
Text: QUALIFICATION REPORT M28F410/420, M28F411/421 T6-U10: 4 Mbit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power
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M28F410/420,
M28F411/421
T6-U10:
TSOP40
M28F410/420
5/12V)
512Kx8
256Kx16
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Untitled
Abstract: No abstract text available
Text: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5 FLASH MEMORY in TSOP40 INTRODUCTION The M28F102 is a 1 Megabit FLASH MEMORY organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5 process which has been especially
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M28F102
TSOP40
120ns
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STMicroelectronics marking code date
Abstract: CHN G4 chn 509 marking code stmicroelectronics Date Code Marking STMicroelectronics CHN 450 SUMITOMO G700 ablebond 8290 Part Marking STMicroelectronics ST MICROELECTRONICS DATE CODE MARKING
Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN MPG-EEP/04/578 M50FW, M50LPW, M50FLW Firmware Hub and Low Pin Count Product Families, TSOP40 Environmental Friendly Package and Assembly Location Change WHAT IS THE CHANGE? The present PCN replaces and upgrades PCN MPG/EE/0086 / CPCN MPG/EEP/04/450.
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MPG-EEP/04/578
M50FW,
M50LPW,
M50FLW
TSOP40
MPG/EE/0086
MPG/EEP/04/450.
STMicroelectronics marking code date
CHN G4
chn 509
marking code stmicroelectronics
Date Code Marking STMicroelectronics
CHN 450
SUMITOMO G700
ablebond 8290
Part Marking STMicroelectronics
ST MICROELECTRONICS DATE CODE MARKING
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M28F102
Abstract: PLCC44 QRFL9810 PLCC44 package
Text: QRFL9810 QUALIFICATION REPORT M28F102 T5-U20: 1 Mbit x16 Dual Supply Flash Memory INTRODUCTION The M28F102 is a 1 Mbit Dual Supply (5V/12V) Flash memory organized as 64 KByte of 16 bits each. It is offered in TSOP40 and PLCC44 packages. The M28F102 is manufactured with the STMicroelectronics advanced CMOS 0.8 micron T5-U20 (-20%
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QRFL9810
M28F102
T5-U20:
V/12V)
TSOP40
PLCC44
T5-U20
QRFL9810
PLCC44 package
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JESD22-A112-A
Abstract: HR-10 af55 c100nf M29W040 M39432 QREE9801 AF4F-M29V040
Text: QREE9801 QUALIFICATION REPORT M39432 T6: FLASH+ Multiple Memory in TSOP40 The purpose of this document is to present the summary of the reliability tests performed to qualify the M39432 device. This multiple-memory device combines a Flash memory and an EEPROM on a single die,
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QREE9801
M39432
TSOP40
M39432
JESD22-A112-A
HR-10
af55
c100nf
M29W040
QREE9801
AF4F-M29V040
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m29f102
Abstract: M29F200 PLCC44 QRFL9806
Text: QRFL9806 QUALIFICATION REPORT M29F102 and M29F105 T6-U20: 1 Mbit x16 Single Supply Flash Memory INTRODUCTION The M29F102 and M29F105 are a 1 Mbit Single Supply (5V) Flash memories organized as 64 KWord of 16 bits each. The M29F102 is offered in PLCC44 and TSOP40 packages; the M29F105 is offered in
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QRFL9806
M29F102
M29F105
T6-U20:
PLCC44
TSOP40
M29F200
QRFL9806
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TSOP40
Abstract: M29W004 M29W400 QR120
Text: QUALIFICATION REPORT M29W004 T6-U20: 4Mb 512K x 8 SINGLE SUPPLY FLASH MEMORY in TSOP40 INTRODUCTION The M29W004 is a 4Mb Low Voltage Single Supply (2.7-3.6V) Flash memory organized as 512K bytes of 8 bits each. It is offered in TSOP40 package. It can be programmed and erased in-system or in standard
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M29W004
T6-U20:
TSOP40
TSOP40
T6-U20
100ns
M29W400
QR120
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1N914
Abstract: M28F411
Text: M28F411 M28F421 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks
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M28F411
M28F421
TSOP40
20/25mA
M28F411
M28F42tent
1N914
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Untitled
Abstract: No abstract text available
Text: QUALIFICATION REPORT M28F410/420, M28F411/421 4 Megabit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power
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M28F410/420,
M28F411/421
TSOP40
M28F410/420
5/12V)
512Kx8
256Kx16
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M28V411
Abstract: M28V421
Text: M28V411 M28V421 LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks
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M28V411
M28V421
TSOP40
120ns
M28V41patent
M28V411
M28V421
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CDIP32
Abstract: M28F411 M28W431 QRFL9802
Text: QRFL9802 QUALIFICATION REPORT M28W431 T6-U20: 4 Mb x8 Flash Memory in TSOP40, Catania M5 Diffusion Line INTRODUCTION The M28W431 is a 4 Mb Low Voltage Dual Supply (3/12V) Boot Block Flash memory organised as 512K bytes of 8 bits each. It is manufactured with the ST Microelectronics advanced CMOS 0.6 micron T6-U20
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QRFL9802
M28W431
T6-U20:
TSOP40,
3/12V)
T6-U20
TSOP40
10x20
CDIP32
M28F411
QRFL9802
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QR107
Abstract: TSOP40 Flash M28F101 M28F102 PLCC44
Text: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5-U20 FLASH MEMORY in TSOP40 and PLCC44 INTRODUCTION The M28F102 is a 1 Megabit FLASH Memory organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which has been expecially
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M28F102
T5-U20
TSOP40
PLCC44
T5-U20
100ns
TSOP40
PLCC44
QR107
TSOP40 Flash
M28F101
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30n40
Abstract: No abstract text available
Text: M 28W 411 M 28W 421 VERY LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY / T 7 S C S -T H O M S O N ^ 7 # » HD(g (ôai TO©iD(gl PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo
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TSOP40
150ns
30n40
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Untitled
Abstract: No abstract text available
Text: n r z *¿7 i. M28F411 M28F421 S C S -T H O M S O N R 0 ö » ilL I g fM O ( g i CMOS 4 Megabit (x 8, 7 Blocks FLASH MEMORY ADVANCE DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo cation) with hardware write and erase pro
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M28F411
M28F421
TSOP40
20/25mATypical
M28F411,
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Untitled
Abstract: No abstract text available
Text: 57. SGS-THOMSON M28F841 •LI 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PR ELIM IN A R Y DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 5 V ± 0.5V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE
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M28F841
TSOP40
100ns
TSOP40
A0-A19
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Untitled
Abstract: No abstract text available
Text: 5 7 . S G S -T H O M S O N M28F841 llll g [s 5 (Q I[L I T O © lJÌ!lD (g Ì 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY PREUMI NARY DATA • SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 5V± 0.5V SUPPLY VOLTAGE
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M28F841
TSOP40
100ns
8F841
Q0b6713
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XX20H
Abstract: I01498 A19D A13D
Text: SGS-THOMSON M28V841 LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PR ELIM IN A R Y DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S 0 4 4 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE
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M28V841
TSOP40
100ns
XX20H
I01498
A19D
A13D
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f421
Abstract: v421 6080ns
Text: Gì. M28F411, F421 M28V411, V421 SGS-1H0MS0N IU CMOS 4 Megabit 512K x 8, 7 Block Erase _ FLASH MEMORY ABBREVIATED DATA SMALL SIZE TSOP40 PLASTIC PACKAGE - Normal and Reverse Pinout MEMORY ERASE in BLOCKS - One 16K Boot Block (top or bottom location)
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M28F411,
M28V411,
TSOP40
r------------1196
f421
v421
6080ns
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M28F211
Abstract: M28F221
Text: M28F211 M28F221 SGS-THOMSON M g [Î3 iH iO T ® K !]r 2 Megabit (x 8, Block Erase FLASH MEMORY P R E L IM IN A R Y D A TA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo cation) with hardware write and erase pro
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M28F211
M28F221
TSOP40
20/25mATypical
M28F221
71B1B37
M28F211,
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Untitled
Abstract: No abstract text available
Text: 5 7 . M28F211 M28F221 SGS-IHOMSON EilD @^ [ÌlLiCT^ K!lD(gi 2 Megabit (x 8, Block Erase FLASH MEMORY PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo cation) with hardware write and erase pro
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M28F211
M28F221
TSOP40
M28F238
M28F211,
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Untitled
Abstract: No abstract text available
Text: M28F411 M28F421 SGS-THOMSON ìl i 4 Megabit x 8, Block Erase FLASH MEMORY PRELIM INARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo cation) with hardware write and erase pro tection
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OCR Scan
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PDF
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M28F411
M28F421
TSOP40
20/25mA
M28F421
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M28V841 l ll lM J i lL li M W I i e i LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE
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M28V841
TSOP40
100ns
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