M29F105B
Abstract: A12-A15
Text: M29F105B 1 Mbit 64Kb x16, Block Erase Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word – Status Register bits
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M29F105B
0020h
0087h
TSOP40
M29F105B
A12-A15
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M29F105B
Abstract: 0087H
Text: M29F105B 1 Mbit 64Kb x16, Block Erase Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word
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M29F105B
0020h
0087h
M29F105B
A0-A15
DQ8-DQ15
TSOP40
AI02116
0087H
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M29F102B
Abstract: m29f102b-70 M29F105B AD0-AD15 AN1056 M29F040 M29F102 MC68330 ST10R163 A1731
Text: AN1056 APPLICATION NOTE Software Drivers for M29F102B and M29F105B Flash Memories CONTENTS Introduction The M29F102B Programming Model Using the C libraries C Library Functions Adapting the Software for the Target System Limitations of the code Connection to Common
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AN1056
M29F102B
M29F105B
M29F102B
M29F102
m29f102b-70
AD0-AD15
AN1056
M29F040
MC68330
ST10R163
A1731
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m29f102
Abstract: M29F200 PLCC44 QRFL9806
Text: QRFL9806 QUALIFICATION REPORT M29F102 and M29F105 T6-U20: 1 Mbit x16 Single Supply Flash Memory INTRODUCTION The M29F102 and M29F105 are a 1 Mbit Single Supply (5V) Flash memories organized as 64 KWord of 16 bits each. The M29F102 is offered in PLCC44 and TSOP40 packages; the M29F105 is offered in
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QRFL9806
M29F102
M29F105
T6-U20:
PLCC44
TSOP40
M29F200
QRFL9806
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M29F105B
Abstract: AI02117
Text: M29F105B 1 Mb x16, Block Erase SINGLE SUPPLY FLASH MEMORY PRELIMINARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word
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M29F105B
0020h
0087h
TSOP40
M29F105B
AI02117
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M29F105B
Abstract: No abstract text available
Text: M29F105B 1 Mb x16, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word – Status Register bits
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M29F105B
0020h
0087h
TSOP40
A0-A15
100ns
120ns
DQ8-DQ15
M29F105B
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FDIP24W
Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS
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M2716
450ns,
FDIP24W
M2732A
M2764A
FDIP28W
M27C64A
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
M27C256B
M27C64A
M29F040
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ram 2015
Abstract: M93C56 M27256 M2764A M27C64A QRR9804 M29F105 Part Marking STMicroelectronics flash memory M87C257 m29f002
Text: QRR9804 QUALITY & RELIABILITY REPORT January 1998 to December 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR9804
ram 2015
M93C56
M27256
M2764A
M27C64A
QRR9804
M29F105
Part Marking STMicroelectronics flash memory
M87C257
m29f002
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Device-List
Abstract: NEC D2716D novatek nt68f63 nt68f63 NEC D2732D D2716D 16V8H-25 ATMEL 220 24C16 D2732D 16V8H-15
Text: LabTool-48 Version 4.67 <ALL> Device List Page 1 of 20 ACTRANS AC29LV400B *44PS AC29LV400B *48TS AC29LV400T *44PS AC29LV400T *48TS ALi M6759 M6759 *44 M6759 *44Q M8720 Alliance AS29F040 AS29LV800T *48TS AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera
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LabTool-48
AC29LV400B
AC29LV400T
M6759
M8720
AS29F040
Device-List
NEC D2716D
novatek nt68f63
nt68f63
NEC D2732D
D2716D
16V8H-25
ATMEL 220 24C16
D2732D
16V8H-15
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NEC D2732D
Abstract: nt68f63 novatek nt68f63 d2716d NEC D2716D atc 93lc46 D2732D CIRCUIT NEC D2716D TMS87C510 16V8H-25
Text: Dataman-48 Version 4.30 <ALL> Device List ALi M6759 www.dataman.com M6759 *44 M6759 *44Q M8720 AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera EP1210 EP220 EP312 EP330 EP900 EP910-T EPC1064 EPC1213 EPC1441 as 1213 EPM3064A *44 EPM5192 @84 EPM7032AEas7032 *44
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Dataman-48
M6759
M8720
AS29LV800B
AS29LV800T
EP1210
EP220
NEC D2732D
nt68f63
novatek nt68f63
d2716d
NEC D2716D
atc 93lc46
D2732D
CIRCUIT NEC D2716D
TMS87C510
16V8H-25
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atc 93lc46
Abstract: 25LV512 39SF020A 25LV010 49LF040 25LF020A 95p08 89lpc932 nt68f63g 39vf020
Text: LabTool-48XP Version 5.60 <ALL> Device List Page 1 of 23 ACTRANS AC29LV400B *44PS AC39VF080 *40TS AC29LV400B *48TS AC39VF088 *48TS AC29LV400T *44PS AC39VF800 *48TS AC29LV400T *48TS ALi M6759 M6759 *44 M6759 *44Q M8720 Alliance AS29F040 AS29LV800T *48TS AS29LV400B *48TS
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LabTool-48XP
AC29LV400B
AC39VF080
AC39VF088
AC29LV400T
AC39VF800
M6759
atc 93lc46
25LV512
39SF020A
25LV010
49LF040
25LF020A
95p08
89lpc932
nt68f63g
39vf020
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M29F STMicroelectronics
Abstract: M29F002 M29F040 M29F100 M29F102B M29F105B M29F200 M29F400 M29W040 M29W400
Text: Flash Memories Discover ST Now A WORLD LEADER IN NON-VOLATILE MEMORIES STMicroelectronics is a world leader in Non-Volatile Memories, manufacturing a broad range which includes OTP one time programmable and UV (ultra violet erase) EPROMs, Flash Memories,
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FLFLASH/0998
286-CJ103
M29F STMicroelectronics
M29F002
M29F040
M29F100
M29F102B
M29F105B
M29F200
M29F400
M29W040
M29W400
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QRR0001
Abstract: ST16 m29f002 065um ST M27C256B PART MARKING FM27c1024 QRR000
Text: QRR0001 QUALITY & RELIABILITY REPORT April 1999 March 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR0001
QRR0001
ST16
m29f002
065um
ST M27C256B PART MARKING
FM27c1024
QRR000
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M96S66
Abstract: tsop 3846 ST M27C256B PART MARKING M27128 M2764A QRR9903
Text: QRR9903 QUALITY & RELIABILITY REPORT October 1998 September 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR9903
M96S66
tsop 3846
ST M27C256B PART MARKING
M27128
M2764A
QRR9903
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25X25
Abstract: Marking STMicroelectronics m27c256 QRR9904 ST16 M27C256 M27C320
Text: QRR9904 QUALITY & RELIABILITY REPORT January 1999 December 1999 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR9904
25X25
Marking STMicroelectronics m27c256
QRR9904
ST16
M27C256
M27C320
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M25C
Abstract: Marking STMicroelectronics m27c256 QRR0001 QRR0002 ST16 M29W160 M275 M27C512 marking QRR000 ST M27C256B PART MARKING
Text: QRR0002 QUALITY & RELIABILITY REPORT July 1999 June 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR0002
M25C
Marking STMicroelectronics m27c256
QRR0001
QRR0002
ST16
M29W160
M275
M27C512 marking
QRR000
ST M27C256B PART MARKING
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A25L020AO-F
Abstract: rtd2122l n25q128a13 cFeon EN25T80 EN25T80 wt61p8 A25L5120-F WT6702F pm25w020 GD25Q40
Text: Page 1 of 69 Dataman-48XP/48UXP Version 8.10 <ALL> Device List ACTRANS AC25LV010 *8SO AC29LV400B *44PS AC29LV400T *44PS AC39LV010 *32PLCC AC39LV020 *32PLCC AC39LV040 *32PLCC AC39LV080 *40TS AC39LV512 *32PLCC AC39LV800 *48TS SDP-UNIV-16SO SDP-UNIV-44PS SDP-UNIV-44PS
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Dataman-48XP/48UXP
AC25LV010
AC29LV400B
AC29LV400T
AC39LV010
32PLCC
AC39LV020
AC39LV040
A25L020AO-F
rtd2122l
n25q128a13
cFeon EN25T80
EN25T80
wt61p8
A25L5120-F
WT6702F
pm25w020
GD25Q40
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ST M27C256B PART MARKING
Abstract: M29W080 QRR0003 stmicroelectronics datecode m27C256 Marking STMicroelectronics m27c256 m29w160 reliability report M29W160 QRR000 QRR0001 ST16
Text: QRR0003 QUALITY & RELIABILITY REPORT October 1999 September 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR0003
ST M27C256B PART MARKING
M29W080
QRR0003
stmicroelectronics datecode m27C256
Marking STMicroelectronics m27c256
m29w160 reliability report
M29W160
QRR000
QRR0001
ST16
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M29F105B HIÊ ô [l[LI(gTÎ^ R!lD(êi 1 Mb (x16, Block Erase) SINGLE SUPPLY FLASH MEMORY PRELIMINARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10^is typical PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29F105B
TSOP40
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Untitled
Abstract: No abstract text available
Text: M29F105B 1 Mbit 512Kb x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 10|os typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Word-by-Word
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M29F105B
512Kb
0020h
0087h
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Untitled
Abstract: No abstract text available
Text: 5 7 . SGS-THOMSON M29F105B 1 Mbit x16, Block Erase Single Supply Flash Memory PRELIM IN ARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10^is typical PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Word-by-Word
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M29F105B
0020h
0087h
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AI02252
Abstract: No abstract text available
Text: Ì Z 7 SCS-THOMSON M29F105B 1 Mbit x16, Block Erase Single Supply Flash Memory PRELIMINARY DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 10|is typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29F105B
0020h
0087h
TSOP40
AI02252
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M29F105B
Abstract: No abstract text available
Text: SCS-THOMSON M29F105B R}OD ®i[LI êïï®®liiDD(gS 1 Mbit (x16, Block Erase Single Supply Flash M em ory P R E L IM IN A R Y DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10^is typical
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M29F105B
0020h
0087h
M29F105B
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102119
Abstract: No abstract text available
Text: SGS-THOMSON [MD M[iL[iOTMO(§S M29F105B 1 Mb (x16, Block Erase SINGLE SUPPLY FLASH MEMORY PRELIM INARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10jis typical PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29F105B
10jis
0020h
0087h
14Specifications
102119
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