CTL5239-056-021
Abstract: No abstract text available
Text: 501-380 Qualification Test Report 28Feb06 Rev A Dual Beam Shunt 1. INTRODUCTION 1.1. Purpose | Testing was performed on the Tyco Electronics Dual Beam Shunt to determine its conformance to the requirements of Product Specification 108-1674 Rev. O. 1.2. Scope
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28Feb06
11Feb97
30Oct97.
CTL5239-056-021.
CTL5239-056-021
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PDF
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Untitled
Abstract: No abstract text available
Text: 108-1674 Product Specification 28Feb06 Rev A Dual Beam Shunt 1. SCOPE 1.1. Content | This specification covers the performance, tests and quality requirements for the Tyco Electronics dual beam shunt connector. This connector is a separable electrical connection device for mating with 2,
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28Feb06
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PDF
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Tyco 567
Abstract: LR7189
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. — »— LOC ALL RIGHTS RESERVED. REVISIONS DIST G 14 LTR DESCRIPTION OWN DATE REV PER 0 G 3 A —0 0 3 5 —0 5 APVD JR MJS 28FEB05 D D U WIRE RANGE
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OCR Scan
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62mm2
31MAR2000
Tyco 567
LR7189
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. 2 3 4 RELEASED FOR PUBLICATION - - ALL RIGHTS RESERVED. COPYRIGHT BY TYCO ELECTRONICS CORPORATION. LOC DIST GP 00 R E V IS IO N S DESCRIPTION E1 A REVISED PER E C Q -0 5 -0 0 9 2 8 6 28FEB06 10.16 [.4 00 ] MA X CABLE DIA 11.18
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OCR Scan
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ECO-05-009286
28FEB06
31MAR2000
28FEB06
2j59jDm
US072436
\SHUEY\749195-C
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD DIST REVISIONS 00 LTR AD DESCRIPTION DWN DATE EC 0G3C 0838 04 APVD BSV JLG 28FEB05 POINT OF MEASUREMENT FOR PLATING THICKNESS
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28FEB05
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. 4RN A U COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 3 2 - LOC ALL RIGHTS RESERVED. DIST AA R E V IS IO N S 22 P LTR C DESCRIPTION DATE DWN TK JW 28FEB07 REV PER ECO—07—004331 APVD MATERIAL:
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OCR Scan
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28FEB07
UL94V-0;
81//m[
27yum
22SEP97
31MAR2000
29SEP97
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PDF
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L142
Abstract: V7-3S39E9 L14-2
Text: FO-50 3 6 0 - L 1 3 1 2 1 4 1 1 5 1 6 1 1 1 8 1 REV CW-B8882 1 9 1 DOCUMENT 207539 io CHANGED CS L BY CHECK SAV 28FEB03 NOTES 1 - I N I N S P E C T I O N , DO NOT BURN OUT GOLD C O N T A C T S 2 - I N I N S P E C I O N , DO NOT E X C E E D 10 VDC, . I A R E S I S T I V E LOAD
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OCR Scan
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FO-50
CW-B8882
28FEB03
FORCE-----50
28FEB03
V7-3S39E9
L142
V7-3S39E9
L14-2
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC
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Si7456DP
Si7456DP-T1-E3
Si7456DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive
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Original
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Si7846DP
Si7846DP-T1-E3
Si7846DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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SI7456DDP-T1-GE3
Abstract: 2285b
Text: New Product Si7456DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a VDS (V) RDS(on) () Max. 0.023 at VGS = 10 V 27.8 100 0.024 at VGS = 7.5 V 27.2 0.031 at VGS = 4.5 V 24 Qg (Typ.) 9.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm
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Original
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Si7456DDP
Si7456DDP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
2285b
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si7463ADP Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0100 at VGS = - 10 V - 46 0.0135 at VGS = - 4.5 V - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si7463ADP
2002/95/EC
Si7463ADP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification
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Original
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SiRA00DP
2002/95/EC
SiRA00DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET
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Original
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SiR698DP
2002/95/EC
SiR698DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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SiR460D
Abstract: SiR460DP siR460
Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET
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Original
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SiR460DP
SiR460DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SiR460D
siR460
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PDF
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SIR662
Abstract: No abstract text available
Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 VDS (V) 60 Qg (Typ.) 30 nC PowerPAK SO-8 D S 6.15 mm S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View
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Original
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SiR662DP
2002/95/EC
SiR662DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIR662
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PDF
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SiR826DP
Abstract: No abstract text available
Text: New Product SiR826DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 60 0.0052 at VGS = 7.5 V 60 0.0065 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 27.9 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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Original
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SiR826DP
2002/95/EC
SiR826DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server
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Original
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Si7336ADP
Si7336ADP-T1-E3
Si7336ADP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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SI7997Dp
Abstract: No abstract text available
Text: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si7997DP
2002/95/EC
Si7997DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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sir158
Abstract: No abstract text available
Text: New Product SiR158DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60g 0.0023 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 41.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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Original
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SiR158DP
SiR158DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sir158
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PDF
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si7272
Abstract: No abstract text available
Text: New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • PWM Optimized
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Original
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Si7272DP
Si7272DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si7272
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7463DP Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0092 at VGS = - 10 V - 18.6 0.014 at VGS = - 4.5 V - 15 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Original
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Si7463DP
2002/95/EC
Si7463DP-T1-E3
Si7463DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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AT91 TC CAPTURE
Abstract: AT91FR40162
Text: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor Core • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – Embedded ICE In-circuit Emulation
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Original
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32-bit
16-bit
1024K
128-bit
2632D
15-Sep-05
documents/doc6186
AT91 TC CAPTURE
AT91FR40162
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PDF
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2.54mm Male locking header
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 66 FLAMABILITY RATING: UL94-V0 MAX TEMPERATURE: 220°C 10 S COLOR: BEIGE CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 2.54MM A
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Original
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UL94-V0
E323964
26-OCT-10
17-NOV-09
29-JAN-07
28-FEB-06
2.54mm Male locking header
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PDF
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PM582
Abstract: No abstract text available
Text: 2 THIS DRAWING IS UNPUBLISHED. C O P Y RI G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T S LOC GP RESERVED. REV I S I O N S D I ST 00 LTR DE S C R I P T I O N DATE D WN APVD SEE SHEET c C T H I S DRAWING I S a C ONT R OL L ED DOCUMENT FOR T l C O E L E C T R O N I C S C O RP ORA TI ON
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28FEB05
MAR200Ü
PM582
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PDF
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