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    CTL5239-056-021

    Abstract: No abstract text available
    Text: 501-380 Qualification Test Report 28Feb06 Rev A Dual Beam Shunt 1. INTRODUCTION 1.1. Purpose | Testing was performed on the Tyco Electronics Dual Beam Shunt to determine its conformance to the requirements of Product Specification 108-1674 Rev. O. 1.2. Scope


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    28Feb06 11Feb97 30Oct97. CTL5239-056-021. CTL5239-056-021 PDF

    Untitled

    Abstract: No abstract text available
    Text: 108-1674 Product Specification 28Feb06 Rev A Dual Beam Shunt 1. SCOPE 1.1. Content | This specification covers the performance, tests and quality requirements for the Tyco Electronics dual beam shunt connector. This connector is a separable electrical connection device for mating with 2,


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    28Feb06 PDF

    Tyco 567

    Abstract: LR7189
    Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. — »— LOC ALL RIGHTS RESERVED. REVISIONS DIST G 14 LTR DESCRIPTION OWN DATE REV PER 0 G 3 A —0 0 3 5 —0 5 APVD JR MJS 28FEB05 D D U WIRE RANGE


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    62mm2 31MAR2000 Tyco 567 LR7189 PDF

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. 2 3 4 RELEASED FOR PUBLICATION - - ALL RIGHTS RESERVED. COPYRIGHT BY TYCO ELECTRONICS CORPORATION. LOC DIST GP 00 R E V IS IO N S DESCRIPTION E1 A REVISED PER E C Q -0 5 -0 0 9 2 8 6 28FEB06 10.16 [.4 00 ] MA X CABLE DIA 11.18


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    ECO-05-009286 28FEB06 31MAR2000 28FEB06 2j59jDm US072436 \SHUEY\749195-C PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD DIST REVISIONS 00 LTR AD DESCRIPTION DWN DATE EC 0G3C 0838 04 APVD BSV JLG 28FEB05 POINT OF MEASUREMENT FOR PLATING THICKNESS


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    28FEB05 PDF

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. 4RN A U COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 3 2 - LOC ALL RIGHTS RESERVED. DIST AA R E V IS IO N S 22 P LTR C DESCRIPTION DATE DWN TK JW 28FEB07 REV PER ECO—07—004331 APVD MATERIAL:


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    28FEB07 UL94V-0; 81//m[ 27yum 22SEP97 31MAR2000 29SEP97 PDF

    L142

    Abstract: V7-3S39E9 L14-2
    Text: FO-50 3 6 0 - L 1 3 1 2 1 4 1 1 5 1 6 1 1 1 8 1 REV CW-B8882 1 9 1 DOCUMENT 207539 io CHANGED CS L BY CHECK SAV 28FEB03 NOTES 1 - I N I N S P E C T I O N , DO NOT BURN OUT GOLD C O N T A C T S 2 - I N I N S P E C I O N , DO NOT E X C E E D 10 VDC, . I A R E S I S T I V E LOAD


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    FO-50 CW-B8882 28FEB03 FORCE-----50 28FEB03 V7-3S39E9 L142 V7-3S39E9 L14-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC


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    Si7456DP Si7456DP-T1-E3 Si7456DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

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    Abstract: No abstract text available
    Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive


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    Si7846DP Si7846DP-T1-E3 Si7846DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI7456DDP-T1-GE3

    Abstract: 2285b
    Text: New Product Si7456DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a VDS (V) RDS(on) () Max. 0.023 at VGS = 10 V 27.8 100 0.024 at VGS = 7.5 V 27.2 0.031 at VGS = 4.5 V 24 Qg (Typ.) 9.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm


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    Si7456DDP Si7456DDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 2285b PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7463ADP Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0100 at VGS = - 10 V - 46 0.0135 at VGS = - 4.5 V - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    Si7463ADP 2002/95/EC Si7463ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification


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    SiRA00DP 2002/95/EC SiRA00DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

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    Abstract: No abstract text available
    Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


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    SiR698DP 2002/95/EC SiR698DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SiR460D

    Abstract: SiR460DP siR460
    Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET


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    SiR460DP SiR460DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiR460D siR460 PDF

    SIR662

    Abstract: No abstract text available
    Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 VDS (V) 60 Qg (Typ.) 30 nC PowerPAK SO-8 D S 6.15 mm S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View


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    SiR662DP 2002/95/EC SiR662DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR662 PDF

    SiR826DP

    Abstract: No abstract text available
    Text: New Product SiR826DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 60 0.0052 at VGS = 7.5 V 60 0.0065 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 27.9 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


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    SiR826DP 2002/95/EC SiR826DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server


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    Si7336ADP Si7336ADP-T1-E3 Si7336ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI7997Dp

    Abstract: No abstract text available
    Text: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    Si7997DP 2002/95/EC Si7997DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    sir158

    Abstract: No abstract text available
    Text: New Product SiR158DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60g 0.0023 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 41.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


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    SiR158DP SiR158DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sir158 PDF

    si7272

    Abstract: No abstract text available
    Text: New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • PWM Optimized


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    Si7272DP Si7272DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si7272 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7463DP Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0092 at VGS = - 10 V - 18.6 0.014 at VGS = - 4.5 V - 15 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


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    Si7463DP 2002/95/EC Si7463DP-T1-E3 Si7463DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    AT91 TC CAPTURE

    Abstract: AT91FR40162
    Text: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor Core • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – Embedded ICE In-circuit Emulation


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    32-bit 16-bit 1024K 128-bit 2632D 15-Sep-05 documents/doc6186 AT91 TC CAPTURE AT91FR40162 PDF

    2.54mm Male locking header

    Abstract: No abstract text available
    Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 66 FLAMABILITY RATING: UL94-V0 MAX TEMPERATURE: 220°C 10 S COLOR: BEIGE CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 2.54MM A


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    UL94-V0 E323964 26-OCT-10 17-NOV-09 29-JAN-07 28-FEB-06 2.54mm Male locking header PDF

    PM582

    Abstract: No abstract text available
    Text: 2 THIS DRAWING IS UNPUBLISHED. C O P Y RI G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T S LOC GP RESERVED. REV I S I O N S D I ST 00 LTR DE S C R I P T I O N DATE D WN APVD SEE SHEET c C T H I S DRAWING I S a C ONT R OL L ED DOCUMENT FOR T l C O E L E C T R O N I C S C O RP ORA TI ON


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    28FEB05 MAR200Ü PM582 PDF