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    SIRA00DP Price and Stock

    Vishay Siliconix SIRA00DP-T1-GE3

    MOSFET N-CH 30V 100A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIRA00DP-T1-GE3 Cut Tape 4,890 1
    • 1 $2.91
    • 10 $1.887
    • 100 $2.91
    • 1000 $0.97134
    • 10000 $0.97134
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    SIRA00DP-T1-GE3 Digi-Reel 4,890 1
    • 1 $2.91
    • 10 $1.887
    • 100 $2.91
    • 1000 $0.97134
    • 10000 $0.97134
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    SIRA00DP-T1-GE3 Reel 3,000 3,000
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    • 10000 $0.88025
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    RS SIRA00DP-T1-GE3 Bulk 3,000
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    Chip 1 Exchange SIRA00DP-T1-GE3 77,688
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    Vishay Siliconix SIRA00DP-T1-RE3

    MOSFET N-CH 30V 100A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIRA00DP-T1-RE3 Reel 3,000
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    • 10000 $0.69688
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    Vishay Intertechnologies SIRA00DP-T1-RE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIRA00DP-T1-RE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIRA00DP-T1-RE3 Reel 21 Weeks 3,000
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    • 10000 $0.68573
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    Mouser Electronics SIRA00DP-T1-RE3
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    TTI SIRA00DP-T1-RE3 Reel 3,000
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    • 10000 $0.725
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    EBV Elektronik SIRA00DP-T1-RE3 22 Weeks 3,000
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    Vishay Intertechnologies SIRA00DP-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIRA00DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIRA00DP-T1-GE3 Reel 21 Weeks 3,000
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    • 10000 $0.86618
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    Mouser Electronics SIRA00DP-T1-GE3 9,052
    • 1 $2.7
    • 10 $1.83
    • 100 $1.28
    • 1000 $0.955
    • 10000 $0.88
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    Newark SIRA00DP-T1-GE3 Cut Tape 2,799 1
    • 1 $2.1
    • 10 $1.75
    • 100 $1.39
    • 1000 $1.29
    • 10000 $1.29
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    SIRA00DP-T1-GE3 Reel 3,000
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    • 10000 $0.902
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    Bristol Electronics SIRA00DP-T1-GE3 3,000
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    SIRA00DP-T1-GE3 51
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    Quest Components SIRA00DP-T1-GE3 2,400
    • 1 $2.6408
    • 10 $2.6408
    • 100 $2.6408
    • 1000 $0.9903
    • 10000 $0.9903
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    SIRA00DP-T1-GE3 2,400
    • 1 $2.6408
    • 10 $2.6408
    • 100 $2.6408
    • 1000 $0.9903
    • 10000 $0.9903
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    SIRA00DP-T1-GE3 1,160
    • 1 $2.8
    • 10 $2.8
    • 100 $2.8
    • 1000 $0.875
    • 10000 $0.77
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    SIRA00DP-T1-GE3 1,160
    • 1 $2.8
    • 10 $2.8
    • 100 $2.8
    • 1000 $0.875
    • 10000 $0.77
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    TTI SIRA00DP-T1-GE3 Reel 3,000 3,000
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    • 1000 -
    • 10000 $0.88
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    TME SIRA00DP-T1-GE3 1
    • 1 $1.77
    • 10 $1.59
    • 100 $1.27
    • 1000 $1.19
    • 10000 $1.19
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    Avnet Asia SIRA00DP-T1-GE3 23 Weeks 3,000
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    EBV Elektronik SIRA00DP-T1-GE3 22 Weeks 3,000
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    Vishay BLH SIRA00DP-T1-GE3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SIRA00DP-T1-GE3 1,450 3
    • 1 -
    • 10 $2.1
    • 100 $1.3125
    • 1000 $0.735
    • 10000 $0.693
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    SIRA00DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIRA00DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 100A SO8 PWR PK Original PDF

    SIRA00DP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification


    Original     		SiRA00DP 2002/95/EC SiRA00DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00100 at VGS = 10 V 100 0.00135 at VGS = 4.5 V 100 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification


    Original     		SiRA00DP SiRA00DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification


    Original     		SiRA00DP 2002/95/EC SiRA00DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification


    Original     		SiRA00DP 2002/95/EC SiRA00DP-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification


    Original     		SiRA00DP 2002/95/EC SiRA00DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00100 at VGS = 10 V 100 0.00135 at VGS = 4.5 V 100 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification


    Original     		SiRA00DP SiRA00DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SiRA00DP

    Abstract: S12-1009 MOSFET definitions
    Text: SPICE Device Model SiRA00DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiRA00DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S12-1009 MOSFET definitions PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification


    Original     		SiRA00DP 2002/95/EC SiRA00DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiRA00DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiRA00DP AN609, 2913m 2856u 1699m 7618m 4258m 5983m 7762m 13-Jan-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


    Original     		SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402 PDF

    PowerPAK 1212-8

    Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
    Text: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications


    Original     		VT1045BP-M3/4W VBT1045BP-E3/4W VFT1045BP-M3/4W VT2045BP-M3/4W VBT2045BP-E3/4W VFT2045BP-M3/4W VT3045BP-M3/4W VBT3045BP-E3/4W VFT3045BP-M3/4W VT4045BP-M3/4W PowerPAK 1212-8 mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip PDF

    v0615a

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Computer Stationary Computing One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Stationary Computing Servers 4 Embedded Systems 5 Solid-State Discs SSDs 6 UPS 7


    Original     		J-STD-020 SC-70 WSL1206 VMN-MS6761-1212 v0615a PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    POWERPAK SO8

    Abstract: SIS32
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V


    Original     		SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32 PDF

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - High- and Low-Side MOSFETs in One Compact Package PowerPAIR Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes Key Benefits APPLICATIONS • High- and low-side MOSFETs in one


    Original     		SiZ790DT SiZ914DT VMN-PT0182-1402 PDF

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs PDF