IBM01174054M
Abstract: IBM0117405B4M IBM0117405M4M IBM0117405P4M
Text: IBM01174054M x 411/11, 5.0V, EDO. IBM0117405P4M x 411/11, 3.3V, EDO, LP, SR. IBM0117405M4M x 411/11, 5.0V, EDO, LP, SR. IBM0117405B4M x 411/11, 3.3V, EDO. IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Features • 4,194,304 word by 4 bit organization
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IBM01174054M
IBM0117405P4M
IBM0117405M4M
IBM0117405B4M
IBM0117405
IBM0117405M
IBM0117405B
IBM0117405P
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IBM01174054M
Abstract: IBM0117405B4M IBM0117405M4M IBM0117405P4M
Text: IBM01174054M x 411/11, 5.0V, EDO. IBM0117405P4M x 411/11, 3.3V, EDO, LP, SR. IBM0117405M4M x 411/11, 5.0V, EDO, LP, SR. IBM0117405B4M x 411/11, 3.3V, EDO. IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Features • 4,194,304 word by 4 bit organization
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IBM01174054M
IBM0117405P4M
IBM0117405M4M
IBM0117405B4M
IBM0117405
IBM0117405M
IBM0117405B
IBM0117405P
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Untitled
Abstract: No abstract text available
Text: Discontinued 9/98 - last order; 3/99 last ship IBM01174054M x 411/11, 5.0V, EDOMMDD64DSU-001012331. IBM0117405P4M x 411/11, 3.3V, EDO, LP, SRMMDD64DSU-001012331. IBM0117405M4M x 411/11, 5.0V, EDO, LP, SRMMDD64DSU-001012331. IBM0117405B4M x 411/11, 3.3V, EDOMMDD64DSU-001012331.
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IBM01174054M
EDOMMDD64DSU-001012331.
IBM0117405P4M
SRMMDD64DSU-001012331.
IBM0117405M4M
IBM0117405B4M
IBM0117405
IBM0117405M
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Untitled
Abstract: No abstract text available
Text: IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Features • Low Power Dissipation • 4,194,304 word by 4 bit organization - Active max - 95 mA / 85 mA / 75 mA - Standby: TTL Inputs (max) - 2.0 mA - Standby: C M O S Inputs (max) - 1.0 mA (SP version)
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IBM0117405
IBM0117405M
IBM0117405B
IBM0117405P
28H4726
28H4726.
350ns
350ns)
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0117405
Abstract: No abstract text available
Text: IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO D RAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)
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IBM0117405
IBM0117405M
IBM0117405B
IBM0117405P
104ns
28H4726
SA14-4228-03
0117405
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0117405bj
Abstract: 0117405B
Text: IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Features Low Power Dissipation - Active max - 75 mA / 60 mA - Standby: TTL Inputs (max) - 1.0 mA - Standby: CMOS Inputs (max) - 1.0 mA (SP version) - 0.1 mA (LP version) - Self Refresh (LP version only)
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IBM0117405
IBM0117405M
IBM0117405B
IBM0117405P
SA14-4228-05
0117405bj
0117405B
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Untitled
Abstract: No abstract text available
Text: IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)
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IBM0117405
IBM0117405M
IBM0117405B
IBM0117405P
104ns
124ns
IBM0117405P
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