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    28N170 Search Results

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    28N170 Price and Stock

    onsemi NTBG028N170M1

    SIC MOSFET 1700 V 28 MOHM M1 SER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTBG028N170M1 Cut Tape 805 1
    • 1 $33.76
    • 10 $25.844
    • 100 $33.76
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    • 10000 $33.76
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    NTBG028N170M1 Digi-Reel 805 1
    • 1 $33.76
    • 10 $25.844
    • 100 $33.76
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    • 10000 $33.76
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    NTBG028N170M1 Reel 800 800
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    Avnet Americas NTBG028N170M1 Reel 1,600 17 Weeks 800
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    • 1000 $22.40515
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    NTBG028N170M1 Bulk 14 Weeks, 3 Days 800
    • 1 $28.36
    • 10 $28.36
    • 100 $28.36
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    Mouser Electronics NTBG028N170M1 610
    • 1 $36.17
    • 10 $32.23
    • 100 $28.29
    • 1000 $25.01
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    Newark NTBG028N170M1 Bulk 62 800
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    • 1000 $23.54
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    Richardson RFPD NTBG028N170M1 800
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    • 1000 $25.01
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    Avnet Asia NTBG028N170M1 80 17 Weeks 800
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    • 1000 $6.00139
    • 10000 $5.99538
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    Avnet Silica NTBG028N170M1 18 Weeks 800
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    Chip1Stop NTBG028N170M1 30
    • 1 $30.77
    • 10 $28.1
    • 100 $28.1
    • 1000 $28.1
    • 10000 $28.1
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    EBV Elektronik NTBG028N170M1 4,000 18 Weeks 800
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    New Advantage Corporation NTBG028N170M1 2,400 1
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    • 1000 $46.91
    • 10000 $43.41
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    onsemi NTH4L028N170M1

    SIC MOSFET 1700 V 28 MOHM M1 SER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTH4L028N170M1 Tube 78 1
    • 1 $33.27
    • 10 $25.455
    • 100 $25.455
    • 1000 $25.455
    • 10000 $25.455
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    Avnet Americas NTH4L028N170M1 Bulk 11 Weeks, 3 Days 1
    • 1 $39.84
    • 10 $35.4
    • 100 $32
    • 1000 $32
    • 10000 $32
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    NTH4L028N170M1 Tube 17 Weeks 450
    • 1 -
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    • 1000 $22.01573
    • 10000 $22.01573
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    Mouser Electronics NTH4L028N170M1 825
    • 1 $38.32
    • 10 $34.05
    • 100 $32.23
    • 1000 $28.1
    • 10000 $28.1
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    Newark NTH4L028N170M1 Bulk 450 1
    • 1 $30.25
    • 10 $30.25
    • 100 $30.25
    • 1000 $28.09
    • 10000 $28.09
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    Richardson RFPD NTH4L028N170M1 450
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    • 1000 $24.57
    • 10000 $24.57
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    Avnet Asia NTH4L028N170M1 18 17 Weeks 450
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    • 1000 $17.69168
    • 10000 $17.69168
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    Avnet Silica NTH4L028N170M1 18 Weeks 30
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    Chip1Stop NTH4L028N170M1 10
    • 1 $118
    • 10 $118
    • 100 $118
    • 1000 $118
    • 10000 $118
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    EBV Elektronik NTH4L028N170M1 2,250 18 Weeks 30
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    New Advantage Corporation NTH4L028N170M1 1,800 1
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    • 100 $53.27
    • 1000 $53.27
    • 10000 $49.29
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    Wuhan P&S NTH4L028N170M1 10 1
    • 1 $68.53
    • 10 $68.53
    • 100 $43.74
    • 1000 $33.16
    • 10000 $33.16
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    IXYS Corporation IXBH28N170A

    IGBT 1700V 30A 300W TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBH28N170A Tube
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    Mouser Electronics IXBH28N170A
    • 1 $19.49
    • 10 $17.32
    • 100 $15.65
    • 1000 $12.92
    • 10000 $12.92
    		Get Quote

    onsemi NTCTR028N170M1

    SIC MOS TNR 28MOHM 1700V M1 WAFE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTCTR028N170M1 Reel 500
    • 1 -
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    • 100 -
    • 1000 $19.15
    • 10000 $19.15
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    Avnet Americas NTCTR028N170M1 Reel 1 Weeks 500
    • 1 $16.37843
    • 10 $16.37843
    • 100 $16.37843
    • 1000 $16.37843
    • 10000 $16.37843
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    Mouser Electronics NTCTR028N170M1
    • 1 $28.93
    • 10 $21.34
    • 100 $19.15
    • 1000 $19.15
    • 10000 $19.15
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    Richardson RFPD NTCTR028N170M1 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $18.28
    • 10000 $18.28
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    28N170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXBH28N170

    Abstract: No abstract text available
    Text: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V IC25 = 60 A VCE sat = 3.5 V IXBH 28N170 IXBT 28N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 28N170 28N170 O-268 O-247 728B1 123B1 065B1 IXBH28N170

    TO-268

    Abstract: BiMOSFET transistor TO-247 Outline Dimensions ad smd transistor smd diode 819 IXBT28N170A IXBH28N170A transistor ad 162 TRANSISTOR 610 smd TO-268 footprint
    Text: ADVANCE TECHNICAL INFORMATION High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi IXBH 28N170A IXBT 28N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 28N170A O-268 O-247) 728B1 123B1 728B1 065B1 TO-268 BiMOSFET transistor TO-247 Outline Dimensions ad smd transistor smd diode 819 IXBT28N170A IXBH28N170A transistor ad 162 TRANSISTOR 610 smd TO-268 footprint

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2