K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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K6E0808C1C
Abstract: K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C
Text: PRELIMINARY K6E0808C1C-C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Apr. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.
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K6E0808C1C-C
32Kx8
12/15/20ns
8/10ns
8/10/10ns
7/10ns
28-TSOP1-0813
K6E0808C1C
K6E0808C1C-12
K6E0808C1C-15
K6E0808C1C-20
K6E0808C1C-C
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMOS SRAM K6E0808V1C-C Document Title 32Kx8 Bit High Speed Static RAM 3.3V Operating , Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Jun. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.
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K6E0808V1C-C
32Kx8
28-TSOP1
28-TSOP1-0813
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Untitled
Abstract: No abstract text available
Text: K6E0804C1E-C CMOS SRAM Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating). Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Aug. 1. 1998 Preliminary Rev. 1.0 Release to Final Data Sheet. Nov. 2. 1998 Final Draft Data
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K6E0804C1E-C
64Kx4
K6E0804C1E-
28-SOJ-300
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300b tube
Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
Text: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM
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FBGA-11
24-SOJ-300
-SOJ-300
-TSOP2-300AF
-SOJ-300B
28-SOJ-300
28-SOJ-300A
28-SOJ-400
300b tube
90-FBGA-11
165-FBGA-1517
48-TSOP1-1220F
44-TSOP2-400BF-Lead-Free
SAMSUNG MCP
dram
0X13
SAMSUNG MCP 153
tray bga 64
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RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH
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BR-04-ALL-005
BR-04-ALL-004
RISC-Processor s3c2410
MR16R1624DF0-CM8
arm9 samsung s3c2440 architecture
chip 3351 dvd
sp0411n
K9W8G08U1M
sandisk micro SD Card 2GB
arm9 s3c2440
K9F1G08U0A
K6X8008C2B
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CMOS ASYNCHRONOUS FIFO 32 PIN
Abstract: LH540202 32-PIN
Text: LH540202 CMOS 1024 x 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 15/20/25/35/50 ns The LH540202 is a FIFO First-In, First-Out memory device, based on fully-static CMOS dual-port SRAM technology, capable of storing up to 1024 nine-bit words. It
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LH540202
LH540202
32PLCC
32-pin,
450-mil
28-pin,
300-mil
DIP28-W-300)
CMOS ASYNCHRONOUS FIFO 32 PIN
32-PIN
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LH540203
Abstract: LH5498 32-PIN
Text: LH540203 CMOS 2048 x 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 15/20/25/35/50 ns The LH540203 is a FIFO First-In, First-Out memory device, based on fully-static CMOS dual-port SRAM technology, capable of storing up to 2048 nine-bit words. It
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LH540203
LH540203
32PLCC
32-pin,
450-mil
28-pin,
300-mil
DIP28-W-300)
LH5498
32-PIN
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KM68V257C
Abstract: KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CTG
Text: PRELIMINARY CMOS SRAM KM68V257C Document Title 32Kx8 Bit High Speed Static RAM 3.3V Operating , Evolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Jun. 1st, 1994 Preliminary
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KM68V257C
32Kx8
28-TSOP1
28-TSOP1-0813
KM68V257C
KM68V257C-15
KM68V257C-17
KM68V257CJ
KM68V257CTG
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LH52258A
Abstract: SOJ8
Text: LH52258A FEATURES • Fast Access Times: 20/25 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ FUNCTIONAL DESCRIPTION
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LH52258A
28-Pin,
300-mil
LH52258A
28SOJ300
SOJ8
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K6E0804C1C-C
Abstract: SRAM sheet samsung
Text: PRELIMINARY CMOS SRAM K6E0804C1C-C Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Apr. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.
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K6E0804C1C-C
64Kx4
12/15/20ns
9/10/13ns
10/12/13ns
6/8/10ns
7/9/10ns
28-SOJ-300
K6E0804C1C-C
SRAM sheet samsung
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KM68257CJ
Abstract: KM68257C KM68257C-12 KM68257C-15 KM68257C-20
Text: PRELIMINARY KM68257C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Apr. 1st, 1994 Preliminary
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KM68257C
32Kx8
12/15/20ns
8/10ns
8/10/10ns
28-TSOP1-0813
KM68257CJ
KM68257C
KM68257C-12
KM68257C-15
KM68257C-20
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32-PIN
Abstract: LH540204 LH5499
Text: LH540204 CMOS 4096 x 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 20/25/35/50 ns The LH540204 is a FIFO First-In, First-Out memory device, based on fully-static CMOS dual-port SRAM technology, capable of storing up to 4096 nine-bit words. It
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LH540204
LH540204
indepen447]
32PLCC
32-pin,
450-mil
28-pin,
300-mil
32-PIN
LH5499
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32-PIN
Abstract: LH540203 LH5498
Text: LH540203 CMOS 2048 x 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 15/20/25/35/50 ns The LH540203 is a FIFO First-In, First-Out memory device, based on fully-static CMOS dual-port SRAM technology, capable of storing up to 2048 nine-bit words. It
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LH540203
LH540203
32PLCC
32-pin,
450-mil
28-pin,
300-mil
DIP28-W-300)
32-PIN
LH5498
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KM6865BP-20
Abstract: KM6865BP-15
Text: KM6865B CMOS SRAM 8 K x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12 ,15, 20,25ns Max. The KM865B is a 65,536-bit high-speed Static Random • Low Power D issipation Access Memory organized as 8,192 words by 8 bits.
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KM6865B
KM865B
536-bit
KM6865B-12
KM6865B-15
KM6865B-25
KM6865BP-20
KM6865BP-15
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM64258E CMOS SRAM Document Tills 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial draft Draft Data Aug. 1 .1 9 9 8 Remark Preliminary The attached data sheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right
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KM64258E
64Kx4
28-SOJ-300
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PDF
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Untitled
Abstract: No abstract text available
Text: KM68257C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial re le a s e w ith P re lim in a ry. A pr. 1st, 1994
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KM68257C
32Kx8
28-SOJ-300
28-TSOP1-0813
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PDF
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Untitled
Abstract: No abstract text available
Text: KM68257E, KM68257EI PRELIMINARY CMOS SRAM Document Title 32Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev.No. History Rev. 0.0 Initial D raft Draft Data A ug. 1 .1 9 9 8 Remark
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KM68257E,
KM68257EI
32Kx8
28-SOJ-300
28-TSOP1
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PDF
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Untitled
Abstract: No abstract text available
Text: KM68257E, KM68257EI PRELIMINARY CMOS SRAM Document Title 32Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev.No. History Rev. 0.0 Initial Draft Draft Data Aug. 1 .1 9 9 8 Remark
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KM68257E,
KM68257EI
32Kx8
28-SOJ-300
28-TSOP1-0813
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PDF
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Untitled
Abstract: No abstract text available
Text: KM68V257E/EL, KM68V257EI/ELI CMOS SRAM Document Title 32Kx8 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Aug. 1. 1998 Preliminary Rev. 1.0
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KM68V257E/EL,
KM68V257EI/ELI
32Kx8
28-SOJ-300
28-TSOP1
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PDF
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Untitled
Abstract: No abstract text available
Text: KM64B261A BiCMOS SRAM 64Kx4 Bit With OE High speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns (Max.) • Low Power Dissipation Standby (TTL) : 90 mA (Max.) (CMOS) : 20 mA (Max.) Operating Current: 160 mA (f=100MHz) • Single 5V±5% Power Supply
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KM64B261A
64Kx4
100MHz)
KM64B261AJ
28-SOJ-300
KM64B261A
144-bit
7Tb414a
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Untitled
Abstract: No abstract text available
Text: KM68V257C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 3.3V Operating , Evolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History R ev. 0.0 Initial re le a s e w ith P relim in ary. Jun. 1st, 1994 P re lim in a ry
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KM68V257C
32Kx8
28-TS
28-SOJ-300
28-TSOP1-0813
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PDF
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Untitled
Abstract: No abstract text available
Text: KM64B258A BiCMOS SRAM 65,536 WORD x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8 , 1 0 ,12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating KM64B258AJ-8: 185mA (max.)
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KM64B258A
110mA
KM64B258AJ-8:
185mA
KM64B258AJ-10:
175mA
KM64B258AJ-12:
165mA
KM64B258AJ:
28-SOJ-300
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM64258E CMOS SRAM Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial draft Draft Data Aug. 1. 1998 Remark Preliminary The attached data sheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right
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OCR Scan
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KM64258E
64Kx4
28-SOJ-300
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PDF
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