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    2955V Price and Stock

    onsemi MTP2955V

    MOSFET P-CH 60V 12A TO220AB
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    DigiKey MTP2955V Tube 50
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    Bristol Electronics MTP2955V 55
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    onsemi MTD2955VT4

    MOSFET P-CH 60V 12A DPAK
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    DigiKey MTD2955VT4 Reel 2,500
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    Bristol Electronics MTD2955VT4 2,142
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    MTD2955VT4 964
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    ComSIT USA MTD2955VT4 15,604
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    PEPPERL+FUCHS GmbH RL29-55-V-73C-136

    PHOTOELECTRIC (AUTOMATION)
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    DigiKey RL29-55-V-73C-136 Box 1
    • 1 $206.98
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    PEPPERL+FUCHS GmbH RL29-55-V-25-73C-136

    PHOTOELECTRIC (AUTOMATION)
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    DigiKey RL29-55-V-25-73C-136 Box 1
    • 1 $206.98
    • 10 $206.98
    • 100 $206.98
    • 1000 $206.98
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    PEPPERL+FUCHS GmbH RL29-55-V/73C/136

    Photoelectric (Automation) |Pepperl+Fuchs RL29-55-V/73C/136
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    Newark RL29-55-V/73C/136 Bulk 1
    • 1 $248.65
    • 10 $230.89
    • 100 $204.93
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    2955V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    T2-955V

    Abstract: 2955v T2955V MTD2955VT4 369D AN569 MTD2955V SMD310 369C
    Text: 2955V Power MOSFET 12 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


    Original     		MTD2955V MTD2955V/D T2-955V 2955v T2955V MTD2955VT4 369D AN569 MTD2955V SMD310 369C PDF

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl PDF

    Untitled

    Abstract: No abstract text available
    Text: 2955V Power MOSFET 12 A, 60 V P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


    Original     		MTD2955V MTD2955V/D PDF

    T2955V

    Abstract: T2-955V MTD2955VT4 MTD2955V AN569 MTD2955V1 2955v Power MOSFET 12 Amps, 60 Volts p-Channel
    Text: 2955V Power MOSFET 12 Amps, 60 Volts P–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


    Original     		MTD2955V r14525 MTD2955V/D T2955V T2-955V MTD2955VT4 MTD2955V AN569 MTD2955V1 2955v Power MOSFET 12 Amps, 60 Volts p-Channel PDF

    T2955V

    Abstract: T2-955V 2955V MTD2955VT4G MTD2955V MTD2955VT4 dpak-3 369D AN569 MTD2955VG
    Text: 2955V Power MOSFET 12 A, 60 V P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


    Original     		MTD2955V MTD2955V/D T2955V T2-955V 2955V MTD2955VT4G MTD2955V MTD2955VT4 dpak-3 369D AN569 MTD2955VG PDF

    T2955V

    Abstract: 2955v T2-955V MTD2955VT4G MTD2955VT4 369D AN569 MTD2955V MTD2955VG
    Text: 2955V Power MOSFET 12 A, 60 V P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


    Original     		MTD2955V MTD2955V/D T2955V 2955v T2-955V MTD2955VT4G MTD2955VT4 369D AN569 MTD2955V MTD2955VG PDF

    T2-955V

    Abstract: T2955V 2955V MTD2955VT4 MTD2955V-D
    Text: 2955V Power MOSFET 12 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


    Original     		MTD2955V MTD2955V/D T2-955V T2955V 2955V MTD2955VT4 MTD2955V-D PDF

    MTD2955V

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TD 2955V TM O S V™ Pow er Field E ffe c t Transistor DPAK for S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.230 OHM P-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		MTD2955V/D MTD2955V PDF

    2955v

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP 2955V TM OS V™ Pow er Field E ffect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This


    OCR Scan     		MTP2955V/D 2955v PDF

    2955V

    Abstract: TD2955V
    Text: MOTOROLA Order this document by 2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 2955V TMOS V™ Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM P-Channel Enhancement-Mode Silicon vaaie


    OCR Scan     		MTD2955V/D 2955V TD2955V PDF

    2955v

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview 2955V TMOS V Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS R DS on = 0.200 OHM T M O S V is a n ew te c h n o lo g y d e sig n e d to a chie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lt th a t of sta n d a rd M O S FE Ts. This


    OCR Scan     		PDF

    2955V

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P ro d u c t Preview 2955V TMOS V Power Field Effect Transistor DPAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM TM O S V NjJSpj TM O S V is a new te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p rod u ct a bo u t o n e -h a lt th a t of sta n d a rd M O S FE Ts. This


    OCR Scan     		PDF