winbond 25080
Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010
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2732B
27C100
27HB010
27C256
27HC64
27C128
27C040
7128A
winbond 25080
29F200BB
16LF648A
89V51RD2
18f252
89S51
National SEMICONDUCTOR GAL16V8
29sf040
12f675
29F400BB
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29F002BB-70
Abstract: m29F REV 9 29F002NBB-70 AM29 era 555 29F002BB-120 29F002BT
Text: 29F002B/Am29F002NB Data Sheet J uly 2 003 The following docu ment specifies Spansion mem ory products that ar e n ow offered by both Advanced Micro Devices and Fu jitsu . Although the d ocu ment is marked with the nam e of the company that originally developed the specification, th ese pro ducts will b e offered to cus tomers of both AM D and
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Am29F002B/Am29F002NB
29F002BB-70
m29F REV 9
29F002NBB-70
AM29
era 555
29F002BB-120
29F002BT
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fujitsu 29LV160B
Abstract: 29F800B 29LV160B 29F160B m29f800bb
Text: JTAG-Booster for AMD ÉlanSC520 P.O. Box 1103 Kueferstrasse 8 +49 (7667 908-0 sales@fsforth.de l l l l D-79200 Breisach, Germany D-79206 Breisach, Germany Fax +49 (7667) 908-200 http://www.fsforth.de JTAG-Booster for AMD ÉlanSC520 Copyright 1995.2002:
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lanSC520
D-79200
D-79206
lanSC520
fujitsu 29LV160B
29F800B
29LV160B
29F160B
m29f800bb
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HY29F002
Abstract: 29F002T hyundai tv hy 22 f circuit 29F002 HY29F002T PDIP32 PLCC32 TSOP32 hyundai tv circuits P55i
Text: HY29F002 2 Megabit 256K x 16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current
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HY29F002
S-128
HY29F002
29F002T
hyundai tv hy 22 f circuit
29F002
HY29F002T
PDIP32
PLCC32
TSOP32
hyundai tv circuits
P55i
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LEAPER-3
Abstract: 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver
Text: COMPANY PROFILE 1 Leap Electronic was established in 1980 located in Taipei Taiwan. With great experienced employees, Leap has dedicated on test equipment and provided a whole and perfect environment of development. Additional, the Company has been qualified by major IC manufacturer such as ATMEL, AMD, MICROCHIP, WINBOND,etc.
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PIC16C52/54/54A
PIC16C55/56/57/57A/58A
PIC12C508/509
PIC16C61
PIC16C620/621/622
PIC16C71/710
PIC16C62/63/64/65
PICC16C72/73/74/74A
PIC16C83/84
PIC17C42/42A/43/44
LEAPER-3
74189
7489 sram
4N34
89C51 interfacing with lcd display
ic 74192 pin configuration
interfacing 20x4 LCD with 89c51
IC 74189 DATA
LEAP-U1
LEAPER-10 driver
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27C32
Abstract: 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a
Text: Dataman S4 Programmer Device Support List Library Version 2.84 May 2001 8 Bit EPROMS, EEPROMS & Flash ROMS AMD 27010 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 9716 9864-25 27128 27256 27512 27C020 27C128 27C64 2817A 28F010 28F512
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2716B
2732B
27C010
27C100
27C512L
27HB010
28C256
28F256
29F002NBB
29F040
27C32
24c04 Atmel
27c301
atmel 24c02
39SF040
24C08 ATMEL
dataman s4
27C101
Xicor 28256 eeprom
2864a
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29f002tc
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29F002T C - 5 5 -70/-90/M B M29 F002B C - 55 /-70/-90 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands
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MBM29F002T
-70/-90/M
F002B
32-pin
F9811
29f002tc
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29053
Abstract: No abstract text available
Text: [p[F3 [U ©T 1PIF3G in te i 8-MBIT 512K X 16,1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B, 28F800CE-T/B, 28F008BE-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation
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1024K
28F800BV-T/B,
28F800CV-T/B,
28F008BV-T/B,
28F800CE-T/B,
28F008BE-T/B
28F004/400BX-T/B
AP-604
AP-617
AB-57
29053
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M29F002
Abstract: M29F002B M29F002T PDIP32 PLCC32 TSOP32 HFNC
Text: W # S C S -T H O M S O N k7 # . MiniamigmaainsiiaMnfBg M 29F002T 29F002B 2 Mb x8, Block Erase SIN G LE SUPPLY FLASH M EM O RY • 5V ± 1 0 % SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME: 1 0 |iS typical
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M29F002T
M29F002B
M29F002T:
M29F002B
M29F002T,
TSOP32
M29F002
PDIP32
PLCC32
HFNC
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A1317
Abstract: AS29 120PI
Text: Preliminary information •■ AS29F002 1 5V 256KX8 CMOS Flash EE PROM Features • O rg a n iz a tio n : 2 5 6 K x 8 • S e c to r a rc h ite c tu re - O n e 16K; tw o 8 K; o n e 32K ; a n d th r e e 6 4K b y te se c to rs - B o o t c o d e s e c to r a r c h ite c tu re — T to p o r B (b o tto m )
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AS29F002
256KX8
256Kx8
mo2B-120T1C
AS29F002B-120T1I
AS29F002T1-120T1C
AS29F002T1-120T1I
32-pin
AS29F002B-55PC
AS29F002B-70PC
A1317
AS29
120PI
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P55i
Abstract: No abstract text available
Text: •«}] Y U N D A l HY29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements Compatible with JEDEC-Standard Comm ands - Uses software comm ands, pinouts, and
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HY29F002
32-Pin
HY29F002
P55i
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Untitled
Abstract: No abstract text available
Text: — Am29F002T/29F002B AM D il 2 Megabit 262,144 x 8-Bit CMOS 5.0 Volt-only, Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system-level power requirements ■ Compatible with JEDEC-standard commands
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Am29F002T/Am29F002B
32-pin
F002T/Am29
F002B
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AM D i i Am29F002/Am29F002N 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
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Am29F002/Am29F002N
29F002
29F002N
29F002/Am
29F002N
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ym 238
Abstract: hy 214 29F002
Text: H ig h P e rfo rm a n ce « 256K X 8 AS29F002 II 5V CMOS Flash EEPROM 2 M egabit 5V CMOS Flash FEPROM Preliminary information Features • O r g a n iz a tio n : 2 5 6 K x 8 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 35 m A m a x im u m read current
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AS29F002
256KX8
256Kx8
ym 238
hy 214
29F002
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AS19F
Abstract: 29F2C F002T
Text: O rd e rin g in fo rm a tio n X Ordering inliirmiii um Asynchronous SRAM port numbering system Package type- P= P D IP I - SO I Voltage: SRAM Blank 5 = 5 V 'C M O S D ensity an d —3 ï V C M O S org an ization Po w e r L LL — L o w pow er Acct ss = V e ry lo w p o w e r
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150TC
150T1
-150SI
32-bit
64-bit
128-bit
128-bit
AS19F
29F2C
F002T
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29F002N
Abstract: No abstract text available
Text: PRELIMINARY AM D i i Am29F002/Am29F002N 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
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Am29F002/Am29F002N
29F002/Am
29F002N
29F002N
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29F002NB
Abstract: No abstract text available
Text: AMDü PRELIMINARY 29F002B/Am29F002NB 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 Volt-only operation for read, erase, and program operations Top or bottom boot block configurations
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Am29F002B/Am29F002NB
29F002
29F002B/Am
29F002NB
16-038FPO-5
32-Pin
16-038-TSOP-2
29F002NB
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Untitled
Abstract: No abstract text available
Text: Hi'^li P i'rfo rm a iK c •■ A S 2 lM;0 2 A 2S6K X 8 SV ( ’MC)S l lasli lil F R O M 2 S6 K x 8 C M O S llii.sli HI.PROM Preliminary information Features • Organization: 2S6Kx8 • Sector architecture • L o w p o w e r c o n s u m p tio n - 4 0 m A m a x im u m re a d c u rre n t
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29F002T
-90SI
-I20S
S29F002T
-120SI
000011b
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Untitled
Abstract: No abstract text available
Text: — Am29F002T/29F002B AM D il 2 Megabit 262,144 x 8-Bit CMOS 5.0 Volt-only, Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system-level power requirements ■ Compatible with JEDEC-standard commands
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Am29F002T/Am29F002B
32-pin
F002T/Am29
F002B
16-038FPO-5
16-038-TSOP-2
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Untitled
Abstract: No abstract text available
Text: M29F002T, M29F002NT 29F002B 2 Mbit 256Kb x8, Block Erase Single Supply Flash Memory • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME: 1Ojas typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29F002T,
M29F002NT
M29F002B
256Kb
M29F002NT,
TSOP32
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Untitled
Abstract: No abstract text available
Text: A High Perform,u h e I S6k X K S V C M O S I l.isli M P R O M VS 21 1(1 Z 1S6Kx8 CMOS Hush M PNOM Preliminary information Features • O r g a n iz a t i o n : 2 5 6 K X 8 1 L o w r p o w e r c o n s u m p t io n • S e c to r a r c h it e c t u r e - 4 0 m A m a x im u m read cu rren t
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29F002B
120TC
AS29F002T
I20TI
F002B
FO02B
120LI
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29F002T90
Abstract: No abstract text available
Text: Prelim inary inform ation Features • Organization: 256KX8 • Sector architecture • Low power consumption - O ne 16K; tw o 8K; o n e 32K; a n d th re e 64K b y te sectors - B oot co d e sector arch itectu re— T to p o r B (b o tto m ) - Erase any c o m b in a tio n o f sectors o r full ch ip
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256KX8
29F002T90
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29F002NT
Abstract: 29F002N 29F002T
Text: M29F002T, M29F002NT 29F002B 2 Mbit 256Kb x8, Block Erase Single Supply Flash Memory • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME: 10\ss typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29F002T,
M29F002NT
M29F002B
256Kb
PDIP32
PLCC32
29F002NT
29F002N
29F002T
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Untitled
Abstract: No abstract text available
Text: H ig h p e r fo r m a n c e 2 5 6 IÍX 8 SV C M O S F la s h E E P R O M A S29F002 h A 2 5 6 K X 8 CM O S Flash E E PR O M Prelim inary information Features • O rgan ization: 2 5 6 K x 8 • L o w p o w er co n su m p tio n - 4 0 mA m axim um read current
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AS29F002T-120PC
S29F002T-120P
-I20T
S29F002B
-120P
1-40008-A
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