T 3036
Abstract: 1mx8 29LV004T V200B-12 3036 MBM29LV002B MBM29LV008T
Text: Flash Memory 3 • Flash memory (3V ONLY) T a = 0 °C to +70 °C Organization ( Wx b) 256Kx8 Part Number Power Consumption Access Cycle max. (mW) Time Time max. (na> min. (ns) Operating Standby Mods (CMOS level) MBM29L.VQÔ2T-10 MBM29LV002B-10 MBM29LV002T-12
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MBM29L
2T-10
MBM29LV002B-10
MBM29LV002T-12
MBM29LV002B-12
MBM29LV002T/B-12-X
MBM29LV200T-10
29LV200B-10
MBM29LV200T-12
T 3036
1mx8
29LV004T
V200B-12
3036
MBM29LV002B
MBM29LV008T
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29LL800
Abstract: L6BH
Text: P R E L IM IN A R Y 29LL800T/29LL800B AMD£I 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically
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Am29LL800T/Am29LL800B
29LV200"
LL800"
Am29LL800T
29LL800
L6BH
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORM ATIO N A M D ii 29LL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 2.2 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — 2.2 to 2.7 volt read and w rite operations for battery-powered applications
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Am29LL800B
8-Bit/512
16-Bit)
29LL800
29LL800B
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Untitled
Abstract: No abstract text available
Text: Advance information •■ 29LL800 II 2.2V 1Mx 8/512Kx 16 CMOS Flash EE PROM Features •O rganization: 1M x 8 / 5 1 2 K x 16 • Sector architecture - O ne 16K; tw o 8K; one 32K; and fifteen 64K byte sectors - O ne 8K; tw o 4K; one 16K; and fifteen 32K w o rd sectors
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AS29LL800
8/512Kx
speci20TC
S29LL800-120TI
S29LL800-150TC
S29LL800-150TI
AS29LL800-200TC
S29LL800-200TI
AS29LL800-120SC
AS29LL800-120SI
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AS4C256K16F0-60JC
Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
Text: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization
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AS7C164-
AS7C164-8JC
64-10JC
AS7C164L-I
AS7C164-12PC
AS7C164L-1
AS7C164L-UJC
AS7C2S6-12PC
AS7C164-1SPC
64L-I5PC
AS4C256K16F0-60JC
AS7C164-20PC
AS7CI64-20JC
AS4LC1M16ES-50TC
120TC
28K1
AS4C1440S
1SPC
AS29F040-120TC
as7c3
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 29LL800T/29LL800B AMDZ1 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically
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Am29LL800T/Am29LL800B
8-Bit/524
16-Bit)
48-pin
29LV200â
LL800â
Am29LL800T
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AS29
Abstract: 11100M
Text: Advance information •■ 29LL800 1 2.2V 1Mx 8/512Kx 16 CMOS Flash EE PROM Features • O rg an izatio n : 1M x 8 /5 1 2 K x 16 • Sector arch itec tu re - O n e 16K; tw o 8K; o n e 32K; an d fiftee n 64K b y te sectors - O n e 8K; tw o 4K; o n e 16K; an d fiftee n 32K w o rd sectors
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AS29LL800
1Mx8/512Kx16
1Mx8/512Kx16
12x20
48-pin
9LL800-120TC
AS29LL800-120TI
AS29LL800-150TC
AS29LL800-150TI
AS29LL800-200TC
AS29
11100M
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land pattern for TSOP 2 54 pin
Abstract: land pattern for TSOP 56 pin TSOP 54 land pattern 40013A land pattern for TSOP
Text: n H igh p e rfo rm a n c e 1 M X 8 /5 1 2 K X 1 6 2.2V CMOS Flash EEPROM AS29LL8ÜÖ II 1 M X 8 / 5 1 2 K X 1 6 CMOS Flash EPROM Advance information Features •O rganization: 1M x 8/512K x 16 • Sector architecture - • Low power consumption - 8 mA typical read current
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AS29LL8Ü
8/512K
48-pin
land pattern for TSOP 2 54 pin
land pattern for TSOP 56 pin
TSOP 54 land pattern
40013A
land pattern for TSOP
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80000h8
Abstract: No abstract text available
Text: P R E L IM IN A R Y Am29 LL800T/Am29 LL800B A M D tl 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically
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LL800T/Am29
LL800B
Am29LL800B
10000h,
20000h,
06000h.
30000h,
08000h.
40000h,
10OOOh.
80000h8
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AM Dil 29LL800B 8 Megabit 1 M x 8 -Bit/512 K x 16-Bit CMOS 2.2 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — 2.2 to 2.7 volt read and w rite operations for battery-powered applications
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Am29LL800B
-Bit/512
16-Bit)
29LL800
44-Pin
29LL800B
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORM ATIO N A M D ii 29LL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 2.2 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — 2.2 to 2.7 volt read and w rite operations for battery-powered applications
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OCR Scan
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Am29LL800B
8-Bit/512
16-Bit)
29LL800
29LL800B
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Untitled
Abstract: No abstract text available
Text: Advance information •■ 29LL800 A 2.2V !Mx8/512Kxl6 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture— T top or B (bottom)
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AS29LL800
Mx8/512Kxl6
8/512K
64Kbyte
32Kword
write/LL800T150SC
AS29LL800T150SI
AS29LL800T200SC
AS29LL800T200SI
44-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY A M D * 29LL800T/29LL800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically
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OCR Scan
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PDF
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Am29LL800T/Am29LL800B
8-Bit/524
16-Bit)
48-pin
10000h,
04000h.
06000h.
30000h,
08000h.
40000h,
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZ1 29LL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 2.2 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — 2.2 to 2.7 volt read and w rite operations for battery-powered applications
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Am29LL800B
8-Bit/512
16-Bit)
29LL800
AM29LL800B
29LL800B
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29F400TA
Abstract: FLC31SVC6S MB90P263 15E03L 81V4405C 29lv800ta MB3799 B566 MB47082 29LV800BA
Text: Index Page Document code Series Series Series Series Series 33 35 36 37 31 - CG51 Series D 5 C B Series D1 F1 Series F2 Series F3 Series 32 112 113 113 113 D S0 4 -2 3 1 1 1 -1 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E F4C Series (T1)
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MBM29F002T/B
29F002T/B-X
MBM29LV002T/B
29LV002T/B-X
29LV004B
29LV004T
29LV008B
29LV008T
29F016
29F016A
29F400TA
FLC31SVC6S
MB90P263
15E03L
81V4405C
29lv800ta
MB3799
B566
MB47082
29LV800BA
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