29LV800-90
Abstract: 29LV800-70R 29LV8008 AS29LV800
Text: AS29LV800 March 2001 3V 1M x 8/512K × 16 CMOS Flash EEPROM Features • Organization: 1M×8/512K×16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors - Boot code sector architecture—T top or B (bottom)
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AS29LV800
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29LV800-90
29LV800-70R
29LV8008
AS29LV800
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29LV8008
Abstract: a6ll AS29LV800T 29LV800-90
Text: AS29LV800 July 2001 3V 1M x 8/512K × 16 CMOS Flash EEPROM Features • Low power consumption - 200 nA typical automatic sleep mode current - 200 nA typical standby current - 10 mA typical read current • JEDEC standard software, packages and pinouts
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AS29LV800
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29LV8008
a6ll
AS29LV800T
29LV800-90
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29LV800-90
Abstract: 29LV800-70 D0000H-DFFFFH
Text: 6HSWHPEHU $6 /9 9 0 î . î &026 ODVK 3520 )HDWXUHV • Organization: 1Mx8/512K×16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors - Boot code sector architecture—T (top) or B (bottom)
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29LV800-90
29LV800-70
D0000H-DFFFFH
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29LV800-90
Abstract: 29LV800 AS29LV800
Text: Advanced Information AS29LV800 October 2000 3V 1Mx8/512K×16 CMOS Flash EEPROM Features • Organization: 1M×8/512K×16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors
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AS29LV800
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29LV800-90
29LV800
AS29LV800
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29LV8008
Abstract: a6ll
Text: $GYDQFHLQIRUPDWLRQ $6 /9 90ð.ð&026 ODVK 3520 )HDWXUHV • Organization: 1Mx8/512K×16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors - Boot code sector architecture—T (top) or B (bottom)
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tB-100TI
AS29LV800T-100SC
AS29LV800T-100SI
AS29LV800B-100SC
AS29LV800B-100SI
AS29LV800T-120TC
AS29LV800T-120TI
AS29LV800B-120TC
AS29LV800B-120TI
29LV8008
a6ll
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Untitled
Abstract: No abstract text available
Text: H igh p erfo rm an ce 1M X 8/512K X 16 3V CMOS Flash EEPROM AS29LV800 h il. II 1 M X 8 / 5 1 2 K x 1 6 C M O S F lash EPROM Advance information Features •O rg a n iza tio n : 1M x 8 / 5 1 2 K x 16 • L o w p o w e r c o n s u m p t io n • Sector architecture
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OCR Scan
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8/512K
AS29LV800
AS29LV800-I20TC
AS29LV800-120TI
AS29LV800-150TC
AS29LV800-150TI
AS29LV800-100SC
AS29LV8Ã
0-J00SI
AS29LV800-100TC
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29LV800
Abstract: s551 29LV800-120 i1-40q02-a 199S AS29LV800 0000H-3FFFFH 29LV8008
Text: H ig h p e r f o r m a n c e 1 M x 8 / 51 2 K x 1 6 3 V C M O S F la s h E E P R O M - I I A S29LV 800 , 1 M X 8 /5 1 2 K X 1 6 CMOS F lash EPROM Advance information Features • O r g a n i z a t i o n : 1M x 8 / 5 1 2 K x 16 • L o w p o w e r c o n s u m p t io n
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OCR Scan
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AS29LV800
1MX8/512KX16
1Mx8/512Kx16
AS29LV800-80TC
AS29LV800-100TC
AS29LV800-1
AS29LV800-150TC
12x20
48-pm
29LV800
s551
29LV800-120
i1-40q02-a
199S
AS29LV800
0000H-3FFFFH
29LV8008
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