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    Untitled

    Abstract: No abstract text available
    Text: 144PIN PC100 Unbuffered SO-DIMM 128MB With 8M X 16 CL2 TS16MSS64V8C2 Placement Description The TS16MSS64V8C2 is a 16M bit x 64 Synchronous Dynamic RAM high-density memory module. The TS16MSS64V8C2 consists of 8 piece of CMOS 2Mx16bitsx4banks Synchronous DRAMs in TSOP-II


    Original     		PDF 144PIN PC100 128MB TS16MSS64V8C2 TS16MSS64V8C2 2Mx16bitsx4banks 400mil 144-pin

    WED416S8030A

    Abstract: No abstract text available
    Text: WED416S8030A 2M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,


    Original     		PDF WED416S8030A WED416S8030A 83MHz 100MHz) 83MHz) lengt471) WED416S8030A10SI 2Mx16bitsx4banks 100MHz WED416S8030A12SI

    jedec ms-024

    Abstract: MS-024-FA ms024 WED416S8030A-S 2Mx16bit
    Text: White Electronic Designs WED416S8030A-SI 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply The WED416S8030AxxSI is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097, 152 words x 16 bits. Synchronous design allows


    Original     		PDF WED416S8030A-SI 2Mx16x WED416S8030AxxSI 100MHz) 83MHz) jedec ms-024 MS-024-FA ms024 WED416S8030A-S 2Mx16bit

    Untitled

    Abstract: No abstract text available
    Text: WED416S8030A 2M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,


    Original     		PDF WED416S8030A 83MHz 100MHz) 83MHz) WED416S8030A WED416S8030A10SI WED416S8030A12SI 2Mx16bitsx4banks 100MHz

    Untitled

    Abstract: No abstract text available
    Text: 144PIN PC133 Unbuffered SO-DIMM 128MB With 8Mx16 CL3 TS16MSS64V6C Pin Identification Description The TS16MSS64V6C is a 16M bit x 64 Synchronous Dynamic RAM TS16MSS64V6C high-density consists memory of 8 module. piece of Symbol The CMOS Function A0~A11 Address inputs


    Original     		PDF 144PIN PC133 128MB 8Mx16 TS16MSS64V6C TS16MSS64V6C JEP-108E

    WED416S8030A

    Abstract: WED416S4030A 2MX16x4 WED416S8030A10SI
    Text: White Electronic Designs WED416S8030A 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION „ Single 3.3V power supply „ Fully Synchronous to positive Clock Edge „ Clock Frequency = 100, 83MHz „ SDRAM CAS Latentency = 3 100MHz , 2 (83MHz) „ Burst Operation


    Original     		PDF WED416S8030A 2Mx16x WED416S8030A 83MHz 100MHz) 83MHz) WED416S8030A10SI WED416S8030A12SI 2Mx16bitsx4banks WED416S4030A 2MX16x4 WED416S8030A10SI

    D7678

    Abstract: WED416S8030A 2MX16x4 WED416S8030A10s
    Text: WED416S8030A White Electronic Designs 2Mx16x4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise


    Original     		PDF WED416S8030A 2Mx16x4 WED416S8030A 83MHz 100MHz) 83MHz) WED416S8030A10SI 2Mx16bitsx4banks 100MHz WED416S8030A12SI D7678 WED416S8030A10s