MS024 Search Results

Contextual Info: 512Mb x16, DDP DDR SDRAM DDP 512Mbit DDR SDRAM 8M x 16bit x 4 Banks DDR SDRAM Specification Revision 1.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,

Contextual Info: jdt 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT) PRELIMINARY I n t e g r a t e d D e v i c e T e c h n o lo g y , In c . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center P ow er/G N D pinout for reduced noise. • Equal access and cycle times

Contextual Info: IBM0165405B IBM0165405P 1 6 M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out CAS before RAS Refresh - 4096 cycles/Retention Time 64ms Standard Power SP Retention Time

K4H560838C-TCB3

Abstract: DDR200 DDR266A DDR266B DDR333 k4h560838ctcb3
Contextual Info: 256Mb C-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.7 - 1 - REV. 0.7 Jan. 31. 2002 256Mb C-die(x4/8) DDR SDRAM Revision History Version 0 (May, 2001) - First version for internal review of 256Mb C-die. Version 0.1 (July, 2001) - Updated target current spec(TSOP package base)

K4H280838D-TCB3

Contextual Info: 128Mb D-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.2 - 1 - REV. 0.3 Jan.31. 2001 128Mb D-die(x4/8) DDR SDRAM 128Mb D-die(x4/8) Revision History Version 0 (November, 2001) - First version for internal review Version 0.1 (December, 2001) - Changed spec. from target to preliminry

k4h510838d

Contextual Info: 512Mb x16, DDP DDR SDRAM DDP 512Mbit SDRAM 32M x 16bit x 4 Banks DDR SDRAM Specification Revision 0.0 Apr. 2002 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as

K4H560838C-TCA2

Abstract: K4H560838C-TCB3
Contextual Info: 256Mb C-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.6 - 1 - REV. 0.7 Jan. 31. 2002 256Mb C-die(x4/8) DDR SDRAM Revision History Version 0 (May, 2001) - First version for internal review of 256Mb C-die. Version 0.1 (July, 2001) - Updated target current spec(TSOP package base)

AK4381

Abstract: AK4385 AK4385VT AKD4385 4385vt
Contextual Info: ASAHI KASEI [AK4385] AK4385 108dB 192kHz 24-Bit 2ch ∆Σ DAC GENERAL DESCRIPTION The AK4385 offers the perfect mix for cost and performance based audio systems. Using AKM's multi bit architecture for its modulator the AK4385 delivers a wide dynamic range while preserving linearity for

jedec ms-024

Abstract: MS-024-FA ms024 WED416S8030A-S 2Mx16bit
Contextual Info: White Electronic Designs WED416S8030A-SI 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply The WED416S8030AxxSI is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097, 152 words x 16 bits. Synchronous design allows

Contextual Info: IBM0165805B IBM0165805P ADVANCED 8M x 8 12/11 E D O D R A M Features • 8,388,608 word by 8 bit organization Read-Modity-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time

Contextual Info: 128Mb D-die x16 DDR SDRAM DDR SDRAM Specification Version 0.5 - 1 - REV. 0.5 Jan. 31. 2002 128Mb D-die(x16) DDR SDRAM Revision History Version 0 (July, 2001) - First version for internal review Version 0.1 (September, 2001) - Changed spec to preliminary version

Contextual Info: 128Mb DDR SDRAM Target DDR SDRAM Specification Version 0.6 - 1 of 63 - asersM « REV. 0.6 July 1. ’99 128Mb DDR SDRAM Target Revision History Version 0 May, 1998 - First version for internal review Version 0.1 (June, 1998) - Added x4 organization Version 0.2(Sep,1998)

mpc560xb bolero

Abstract: MPC5606B CHN 949 transistor BC 247 LINFlex PROTOCOL linflex MPC560xB "Base Station subsystem 30f131 pj 989
Contextual Info: Devices Supported: MPC5607B MPC5607BRM Rev. 5 31 Jan 2010 MPC5607B Microcontroller Reference Manual, Rev. 5 Freescale Semiconductor Preliminary—Subject to Change Without Notice 1 Because of an order from the United States International Trade Commission, BGA-packaged product lines and part numbers indicated here currently are not available

CDA 194

Abstract: jedec mo-142 footprint jedec ms-024 D2863-77 leadframe C7025 ALJ- 1300 footprint WSON leadframe Cu C7025 MO-052 MO-108
Contextual Info: ‹ Chapter 2 Package Design CHAPTER 2 PACKAGE DESIGN Flammability Rating Oxygen Index Fine-Pitch Ball Grid Array Leadframe Packages Packages and Packing Methodologies Handbook 17 Oct 2008 2-1 ‹ Chapter 2 Package Design FLAMMABILITY RATING The UL Rating for all Spansion products is 94 V-0.

FM22L16-55-TG

Abstract: FM20L08 FM22L16 256KX16
Contextual Info: Preliminary FM22L16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

BGA OUTLINE DRAWING

Abstract: mr4a16bmys351
Contextual Info: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package

Contextual Info: FM22L16 4Mbit Asynchronous F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

Contextual Info: ASAHI KASEI [AK4366] AK4366 Low Power 24-Bit 2ch DAC with HP-AMP GENERAL DESCRIPTION The AK4366 is 24bit DAC with built-in Headphone Amplifier. The integrated headphone amplifier features “pop-free” power-on/off, a mute control and delivers 50mW of power at 16Ω. The AK4366 is housed in a

K4H281638B-TCA2

Abstract: K4H280438B-TCA2 K4H280438B-TLA2 PC200
Contextual Info: 128Mb DDR SDRAM DDR SDRAM Specification Version 1.0 - 1 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Revision History Version 0 May, 1998 - First version for internal review Version 0.1(June, 1998) - Added x4 organization Version 0.2(Sep,1998) 1. Added "Issue prcharge command for all banks of the device" as the fourth step of power-up squence.

AK4365

Abstract: AK4367 AK4367VN AKD4367
Contextual Info: ASAHI KASEI [AK4367] AK4367 Low Power 24-Bit 2ch DAC with HP-AMP & Output Mixer GENERAL DESCRIPTION The AK4367 is 24bit DAC with built-in Headphone Amplifier. The AK4367 features an analog mixing circuit that allows easy interfacing in mobile phone and portable communication designs. The integrated

K4H560838C-TCB3

Abstract: K4H560838C-TCB0 DDR200 DDR266A DDR266B DDR333
Contextual Info: 256Mb C-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.5 - 1 - REV. 0.5 Nov. 3. 2001 256Mb C-die(x4/8) DDR SDRAM Revision History Version 0 (May, 2001) - First version for internal review of 256Mb C-die. Version 0.1 (July, 2001) - Updated target current spec(TSOP package base)

Contextual Info: ASAHI KASEI [AK4367] AK4367 Low Power 24-Bit 2ch DAC with HP-AMP & Output Mixer GENERAL DESCRIPTION The AK4367 is 24bit DAC with built-in Headphone Amplifier. The AK4367 features an analog mixing circuit that allows easy interfacing in mobile phone and portable communication designs. The integrated

Contextual Info: [AK4385] AK4385 108dB 192kHz 24-Bit 2ch ΔΣ DAC 概 要 AK4385はディジタルオーディオ機器用にコストパフォーマンスを求めた24ビットDACです。ΔΣ変調器にはワイ ドダイナミックレンジを実現する新開発のアドバンスト・マルチビット方式を採用しています。内蔵のポストフィル

AK8813VQ

Contextual Info: [AK8813 ] ASAHI KASEI AK8813 NTSC/PAL Digital Video Encoder 概要 AK8813 は Digital TV/STB 用途に開発されたデジタルビデオエンコーダです。 ITU-R BT.601 準拠の Y,Cb,Cr 信号を NTSC または PAL のコンポジットビデオ及び Y/C（S-ビデオ）信号にエンコードします。