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    2N1015C Search Results

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    2N1015C Price and Stock

    Balluff Inc BCC0FZK (ALTERNATE: BCC M425-M412-3B-329-PS72N1-015-C009)

    Cordset, Double-Ended, Conn1 M12x1, Conn2 M12x1, PUR, Cable length 1.50 m | Balluff BCC0FZK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS BCC0FZK (ALTERNATE: BCC M425-M412-3B-329-PS72N1-015-C009) Bulk 1
    • 1 $82.49
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    • 1000 $82.49
    • 10000 $82.49
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    Balluff Inc BCC0C34 (ALTERNATE: BCC M425-M422-3B-329-PS72N1-015-C009)

    Cordset, Double-Ended, Conn1 M12x1, Conn2 M12x1, PUR, Cable length 1.50 m | Balluff BCC0C34
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS BCC0C34 (ALTERNATE: BCC M425-M422-3B-329-PS72N1-015-C009) Bulk 1
    • 1 $82.49
    • 10 $82.49
    • 100 $82.49
    • 1000 $82.49
    • 10000 $82.49
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    2N1015C Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N1015C Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1015C Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1015C Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1015C Unknown Vintage Transistor Datasheets Scan PDF
    2N1015C Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1015C Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1015C Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1015C Unknown GE Transistor Specifications Scan PDF
    2N1015C Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1015C Pirgo Electronics Power Transistors in TO-82 Scan PDF
    2N1015C Semitronics Silicon Power Transistors Scan PDF
    2N1015C Silicon Transistor JAN / Consumer / Military / Industrial / Automotive / Hi-Rel Scan PDF
    2N1015C Silicon Transistor Industrial Grade NPN Power Transistors Scan PDF
    2N1015C Solid Power POWER TRANSISTORS - TO-82 Scan PDF
    2N1015C Solid Power Power Transistors in TO-82 Package Scan PDF
    2N1015C Westinghouse Silicon Power Transistors 20 Amps, 150 Watts Scan PDF

    2N1015C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    delco

    Abstract: 2n1100 delco Elcoma transitron solitron 2n1036 2N1103 2N1074 2N1076 2N1077
    Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Delco Elecs PPC Product 2N1012 Generallnst 2N1013 2N1014 2N1015 Franel Corp PPC Product 2N1015A Franel Corp PPC Product Semitronics 2N1015B Franel Corp PPC Product 2N1015C Elec Trans Gnrl Trans


    Original     		2N1012 2N1013 2N1014 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F delco 2n1100 delco Elcoma transitron solitron 2n1036 2N1103 2N1074 2N1076 2N1077 PDF

    2N4211

    Abstract: 2N1514 2N2753 2n3054 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228
    Text: Table 1 A B C D E F G H I 1 163-04 1748-0630 1768-0610 2N1015 2N2015 2N2739 2N3743 2N4002 2N6046 2 163-06 1748-0810 1768-0620 2N1015A 2N2016 2N2740 2N3771 2N4003 2N6047 3 163-08 1748-0820 1768-0630 2N1015B 2N2109 2N2741 2N3772 2N4210 2N6048 4 163-10 1748-0830 1768-0810 2N1015C 2N2110


    Original     		2N1015 2N2015 2N2739 2N3743 2N4002 2N6046 2N1015A 2N2016 2N2740 2N3771 2N4211 2N1514 2N2753 2n3054 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228 PDF

    2n1016

    Abstract: No abstract text available
    Text: , Line. <~>E.ml-L-ona.u.cko'i u-^i 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN POWER TRANSISTROS 2N1015/2N1016 Inches . Mm. iymbo A 08 d 0D 0D, <t>0, e e, H Min. Max. .560 .060 .170 12.70


    Original     		2N1015/2N1016 2n1016 PDF

    2N2753

    Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
    Text: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068


    OCR Scan     		2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N2753 S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110 PDF

    TO82 TRANSISTOR

    Abstract: TO82 2N2227
    Text: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C


    OCR Scan     		25MQSa 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1904 2N1936 2N1937 2N2015 TO82 TRANSISTOR TO82 2N2227 PDF

    TO82 TRANSISTOR

    Abstract: npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227
    Text: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE |ù 2 5 M Q S a 0 00 07=11 M J ' ^ T g ^ T p f leMax Amps VCECHSUS Polarity 2N1015 2N1015A 2N1015B 2N1015C


    OCR Scan     		e6DjP073L. 254D22 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1016 2N1016A TO82 TRANSISTOR npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227 PDF

    2N1015

    Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B
    Text: POWER TRANSISTORS *•* PT TYPE NO. TO-82 m MAXIMUM RATINGS 25*C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX le A * Va V _ Sat Test Voltages Conditions le fa I ebo Va V« V A ma V A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5


    OCR Scan     		2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B PDF

    2N1016

    Abstract: 1LQ1 2N1015 Westinghouse westinghouse transistors westinghouse semiconductor 2N1016E zru 2 2N1015C 2n1016b
    Text: W e stin g h o u s e Therm al C h a ra cteristics •Thermal resistance, 0jc» ‘ C/w att, max. Derating factor, W a tts / 'C . *Typical thermal drop, case to heat sink, ° C /w a tt. T O 54-661 Page 1 -u I ru \


    OCR Scan     		2W1015, 2IM1016 2N1015 2N1016 2N1015B) 2N1016B) SM40AG02G12 C/2116/DB; 1LQ1 Westinghouse westinghouse transistors westinghouse semiconductor 2N1016E zru 2 2N1015C 2n1016b PDF

    2N1384

    Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046
    Text: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP


    OCR Scan     		2N974 2N1031A 2N1117 2N975 2N1032 2N1118 2N976 2N1034 2N1119 2N980 2N1384 2N993 2N1516 2N1151 2N1378 2N1036 2N1150 2N1037 2N1046 PDF

    2n1016

    Abstract: 2n2739
    Text: POW ER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS le B V cbo B V ceo B V ebo V A V V Watts < 25°C hFE MIN MAX ì> V CE le V A Test Sat Voltages Conditions Ib le V CE V be A A V V Iebo ma 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5


    OCR Scan     		2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2n2739 PDF

    2N1016

    Abstract: 2N1015C STA3265 2N2229 2N1015 2N1015A 2N1015B 2N1015D 2N1015E STA9760
    Text: Silicon power transistors NPN TO-61 isolated collector (contad) lc | M A X ) Il FE IC/VCE VcEO(SUS| (Min-Max Tvp e# (Volts) @ A/V) STA9760 10-200 10/4 225 STA9761 300 10-200@ 8/4 10-200@5/4 STA 9762 350 VCE|S*T| @ Ic/Ib (V <a A/A) 2@ 10/1 2 @ 8 /.8


    OCR Scan     		STA9760 STAB760 STA9761 STA3265 STA3285 STA3266 STA8860 2N1016 2N1015C 2N2229 2N1015 2N1015A 2N1015B 2N1015D 2N1015E PDF

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


    OCR Scan     		2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152 PDF

    2N1015

    Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N2753
    Text: 8365700 SOLID POWER CORP SOLID 95C 0 0 1 2 0 POWER CORP TS D ö3hS70G -p-3 3 ^0/ 000D12D POW ER TRANSISTORS PT TYPE NO. W atts TO-82 hFE M A X IM U M R A TIN G S @ Ic 25°C B V cbo B V ceo B V ebo V V , V A @ M IN M AX Ic A V CE V Sat Voltages VCE V be V V


    OCR Scan     		T-33-0/ 03hS70G 000D1ED 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N2753 PDF

    Transistors 2n551

    Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
    Text: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts


    OCR Scan     		2N339 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A Transistors 2n551 Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    2N3920

    Abstract: 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307
    Text: £ ^ I jemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 silicon transistors cont-d silicon small signal transistors choppers Type Polarity Power Dissipation @ 25°C mw tlFE @ lc Tj (°C) BVcbo (volts) HILL (volts) Vet (SAT @ lc (Min.)


    OCR Scan     		2N941* 2N942* 2N943* 2N944* 2N945* 2N946* 2N1676 2N1677 2N1917* 2N1918* 2N3920 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2N1015C

    Abstract: 2N1015 2N1015A 2N1015B 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B
    Text: A P I E L E C T R ONI C S I NC blE D • □ G ^ S 'ìE OGGOE^fl SB2 H A M C POWER TRANSISTORS TYPE NO. TO-82 PT MAXIMUM RATINGS @ 25°C BV cbo B V ceo B V ebo Ic Watts V V V A MIN MAX Sat Voltages < ht* Test Conditions Ic A V ce V VCE V be V Ic Ib I ebo * *


    OCR Scan     		2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B PDF

    Untitled

    Abstract: No abstract text available
    Text: POWER TRANSISTORS TYPE NO. TO-82 *•* _ PT MAXIMUM RATINGS m 25*C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX * A Va V le Sat Voltages Va V« V V Test Conditions le fa I ebo A ma A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5


    OCR Scan     		2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N2752t 2N2753f fTO-82 60MIL PDF

    2n1016

    Abstract: 2N2752 JAN2N1016B
    Text: POWER TRANSISTORS PT TYPE NO. SECTION 3 TO-82 M AXIM UM R A TIN CS B V c b o B V ceo BV ebo le V V V A Watts @ 25°C Sat Voltages WE MIN MAX Ic V ce V ce V be Ic Ib I ebo A V V V A A ma 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5


    OCR Scan     		2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N2752 JAN2N1016B PDF

    2NS404

    Abstract: Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204
    Text: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 25°C Watts h FE @ lc BVc e (volts) (°C) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150 55


    OCR Scan     		2N338 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A 2NS404 Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204 PDF

    2N1016E

    Abstract: 2N2753 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016
    Text: POWER TRANSISTO RS PT TYPE NO. TO-82 m MAXIMUM RATINGS Ic 25*C BVcbo BVc to BV ebo V V V A Watts hft Ic MIN MÀX * A Va V _ *•* Test Sat Voltages Conditions le Ic V a V« V A V A I ebo ma 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25


    OCR Scan     		2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016E 2N2753 PDF