Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N389A Search Results

    2N389A Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N389A General Diode Transistor Selection Guide Scan PDF
    2N389A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N389A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N389A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N389A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N389A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N389A Unknown Vintage Transistor Datasheets Scan PDF
    2N389A Pirgo Electronics Power Transistors in TO-3 / TO-53 TO-59 Scan PDF
    2N389A Semitronics Silicon Power Transistors Scan PDF
    2N389A Silicon Transistor JAN / Consumer / Military / Industrial / Automotive / Hi-Rel Scan PDF
    2N389A Solid Power POWER TRANSISTORS Scan PDF
    2N389A Solid Power Power Transistors in TO-3 / TO-53 / TO-59 Package Scan PDF
    2N389A-1 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N389A/1 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N389A/1 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N389A/I Unknown Discontinued Transistor Data Book 1975 Scan PDF

    2N389A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N389

    Abstract: 2N389 - 2N389A 2N1250 2n1211
    Text: £mi~Conductoi tPioduati, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N389 - 2N389A 2N424 - 2N424A 2N1210-2N1211 2N1250 TYPE NO. PT MAXIMUM RATINGS @ 25°C SVcao BVCEO BVEBO Ic V V V


    Original     		2N389 2N389A 2N424 2N424A 2N1210-2N1211 2N1250 2N1210 2N1211 2N389 2N389 - 2N389A 2N1250 2n1211 PDF

    B0933

    Abstract: 2SC7900 2SD234Y 2S0234 2sc3386 2S0255 B0241A b0131 5000N 2S0234Y
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 - 15 20 25 30 35 40 45 -50 55 60 65 70 75 80 -85 -90 >= -2~ 2S0130 2S0130R 2N3507 KT817B 2SC10S0 2SC10S1 2SC830 2S0234G 2S0234 2S0234R 100234 2S0234G-R 2S0130Y 2S02340 2S0234G-0 2S0130BL 2SC3386 2SC338SL


    Original     		Mall02 5000n B0933 2SC7900 2SD234Y 2S0234 2sc3386 2S0255 B0241A b0131 2S0234Y PDF

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


    Original     		PDF

    2N2753

    Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
    Text: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068


    OCR Scan     		2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N2753 S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110 PDF

    2N424

    Abstract: 2N1722 2N389 to-53 2N389A 2N5067 2N5068 2N5630 2N5631 2N5632
    Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2


    OCR Scan     		2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N5632 2N5633 2N5634 TWX-510-224-6582 2N424 2N1722 2N389 to-53 2N389A PDF

    2N1620

    Abstract: 2N1211 N5069 2N1886 2N2032 2N5631 JANTX 2N389 2N389A 2N5067 2N5068
    Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2


    OCR Scan     		2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N5632 2N5633 2N5634 TWX-510-224-6582 2N1620 2N1211 2N1886 2N2032 2N5631 JANTX 2N389 2N389A PDF

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


    OCR Scan     		2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815 PDF

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


    OCR Scan     		PDF

    2N5631 JANTX

    Abstract: 2n1620 2N2032 2N5634 2N389 2N389A 2N5067 2N5629 2N5630 2N5631
    Text: A P I ELECTRONICS INC 00435^2 00002^3 740 * A M C blE D '- 33-/3 POW ER TRANSISTORS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS B V cbo B V ceo B V ebo Ic V V V A Sat Test Voltages Conditions Ib Iebo VcE V be Ic V V A A ma » hrE MIN MAX Ic A VCE V 2N5067 88


    OCR Scan     		2N5067 N5068 N5069 2N5629 2N5630 2N5631 2N5632 2N5633 2N5634 2N2383 2N5631 JANTX 2n1620 2N2032 2N389 2N389A PDF

    2N1649

    Abstract: No abstract text available
    Text: POWER TRANSISTORS PT TYPE NO. @ 25°C Watts MAXIMUM RATINGS B V cbo B V ceo B V ebo V V V h E Ir A @ MAX Ic A V ce M IN V Sat Test Voltages Conditions Ib Iebo Vce V be Ic V A V A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1


    OCR Scan     		2N5067 2N5068 2N5069 2N5630 2N5631 2N5632 2N5633 2N5634 2N389 2N389A 2N1649 PDF

    2N1647

    Abstract: No abstract text available
    Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages Va V« V V Test Conditions Ib Ic Iebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2 1.0


    OCR Scan     		2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N2828 2N2829 0435C TWX-510-224-6582 2N1647 PDF

    STA5050

    Abstract: STA3878 2n389 2N3054 2N3441 STA3879 STC40250 STC40310 STC40312 STC40324
    Text: Silicon power transistors NPN TO-66 = 1.0 to 7.0 A Type# 2N3054 STC40250 STC40310 STC40312 STC40316 STC40324 Typical Values VcEOISUS Volts) 55 40 35 60(Vcer) 40(Vcer) 35 @ Ic/VcE (Min-Max @ A/V) Vbe @ Ic/VcE (V @ A/V) VcE(SAT) @ Ic/ I b (V @ A/A) fT = 0.75 to 60 MHz


    OCR Scan     		2N3054 STC40250 STC40310 STC40312 STC4031E 20-1lts) 2N389 2N389A 2N424 STA5050 STA3878 2N3441 STA3879 STC40324 PDF

    Transistors 2n551

    Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
    Text: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts


    OCR Scan     		2N339 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A Transistors 2n551 Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444 PDF

    2n1620

    Abstract: 2N5631 JANTX 2n1250 2N389 2N5067 2N5069 2N5629 2N5630 2N5631 2N5632
    Text: •f 8365700 SOLID POWER CO RP 95C 00115 SOLID POWER CORP ” Ï5 D D E § fl3bS70D 0GDG11S □ | POWER TRANSISTORS TYPE NO. PT MAXIMUM RATINGS @ Ic 25°C B V cbo B V ceo B V ebo V V V A Watts hrE Sat Voltages C5 MIN MAX Ic A V ce V ce V V be V V Test Conditions


    OCR Scan     		000G11S 2N5067 N5068 2N5069 2N5629 2N5630 2N5631 2N5632 2N5633 2N5634 2n1620 2N5631 JANTX 2n1250 2N389 PDF

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    IN733A

    Abstract: 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167
    Text: 666-001 N r lN N C ^ n 'O N N O V T ic v lO O O 'n'O 'O O 'O O O^t VTi^VTiO 0 r | 0 4 '4 ' 0 \0 ' 0 0 0 0 0 00 0 0 0 CN-NArHCMO 0 0 O 00 o cn-nacm cmcm < m< m cacacananananaooco o n o h h h cMH4 , 'A n N r < 4 - nano cn-no cmcacmcmcmcmcmcmcm canono oo ono cacano


    OCR Scan     		2N582 2N5828 2N5828A 2N5829 2N5830 2N5831 2N5832 2N5833 2N6000 2N6004 IN733A 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2N2828

    Abstract: 2N2383 2N1886 2n1250
    Text: POWER TRANSISTORS PT TYPE NO. M AXIM UM RATINCS BV cbo B V ceo BV ebo lc V V V A Watts hft @ 25°C MIN MAX 65> lc VCE A V Sat Voltages Vci Vet V V Test Conditions Ib lc A A It 80 ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1


    OCR Scan     		2N5067 2N5068 N5069 2N5629 2N5630 2N5631 2N5632 2N5633 2N5634 2N389 2N2828 2N2383 2N1886 2n1250 PDF

    transistor 2SC243

    Abstract: 2sc101 TRANSISTOR 182T2 STC1102 180T2 2SC793Y 2SC101 185t2 2SC793 ST7130
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 transistor 2SC243 2sc101 TRANSISTOR 182T2 STC1102 180T2 2SC793Y 2SC101 185t2 2SC793 ST7130 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    2NS404

    Abstract: Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204
    Text: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 25°C Watts h FE @ lc BVc e (volts) (°C) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150 55


    OCR Scan     		2N338 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A 2NS404 Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204 PDF