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    2N5241 Price and Stock

    Microchip Technology Inc 2N5241

    NPN TRANSISTOR
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    New Jersey Semiconductor Products, Inc. 2N5241

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    Solid State Devices Inc (SSDI) 2N5241

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    Texas Instruments 2N5241

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    International Rectifier 2N5241

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    2N5241 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N5241 API Electronics Short form transistor data Short Form PDF
    2N5241 Diode Transistor Silicon Transistors Scan PDF
    2N5241 Diode Transistor Transistor Short Form Data Scan PDF
    2N5241 Lucas Semiconductors Semiconductor Products Scan PDF
    2N5241 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5241 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5241 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5241 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5241 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5241 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N5241 Unknown Transistor Replacements Scan PDF
    2N5241 Unknown Transistor Replacements Scan PDF
    2N5241 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5241 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N5241 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5241 Unknown Vintage Transistor Datasheets Scan PDF
    2N5241 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5241 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5241 New England Semiconductor NPN TO-3 Transistor Scan PDF
    2N5241 PPC Products Transistor Short Form Data Scan PDF

    2N5241 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n5241

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N5241 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·Switching regulator ·Inverters ·Solenoid and relay drivers ·Motor controls PINNING See Fig.2 PIN


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    PDF 2N5241 2n5241

    2N5241

    Abstract: No abstract text available
    Text: Product Specification www.jmnic.com 2N5241 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・Switching regulator ・Inverters ・Solenoid and relay drivers ・Motor controls PINNING See Fig.2 PIN DESCRIPTION


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    PDF 2N5241 2N5241

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    Abstract: No abstract text available
    Text: 2N5241+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)400 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N5241

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    Abstract: No abstract text available
    Text: 2N5241+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)400 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N5241

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    Abstract: No abstract text available
    Text: 2N5241+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)400 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N5241

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


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    PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


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    PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


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    PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    transistor ah

    Abstract: 2N5241 BDX 625 bdx 540 1N914 2N3440 TIP 110 transistor TIP 75 transistor
    Text: TYPE 2N5241 N-P-N SILICON POWER TRAN SISTO R H IG H V O L T A G E , H IG H FO RW A R D £ N D REVERSE ENERGY D ESIG N E D FOR IN D U S T R IA L A N D M IL IT A R Y A P PLIC A TIO N S 125 W at 62.5°C Case Temperature 4 00 V Collector-Emitter Off-State Voltage


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    PDF 2N5241 transistor ah 2N5241 BDX 625 bdx 540 1N914 2N3440 TIP 110 transistor TIP 75 transistor

    2N5241

    Abstract: No abstract text available
    Text: T Y P E 2N5241 N-P-N SIL ICO N P O W E R T R A N S I S T O R TYPE 2N 5241 BULLETIN NO. D L -S 7111482, MAY HIG H V O L T A G E , H IG H FO R W A RD A N D REVERSE ENERGY DESIG N ED FOR IN D U S T R IA L A N D M IL IT A R Y APPLICATIO N S • 125 W at 62.5°C Case Temperature


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    PDF 2N5241

    Untitled

    Abstract: No abstract text available
    Text: HIGH VOLTAGE TRANSISTORS TYPE NO. 2N5239 2N5240 2N5241 m PT @ • « V ceo k Wax lc Vtxo loo lc hit lc « . @ , . Viso Iebo Vet 125*C k Vet (SAT) 25« : M(AX SUS V V V MA MIN MAX A V< MA V A V MA MA wm s ; A 20 80 5 .4 5 5 100 5.0 225 100 300 4.0 300 4.0


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    PDF 2N5239 2N5240 2N5241 COLLEC52 GG435C TWX-510-224-6582

    2N5239

    Abstract: 2N5241 2n5241 jantx 2N5240 to-53
    Text: HIGH VOLTAGE TRANSISTORS PT TYPE NO. 2N5239 2N5240 2N5241 Ic • Va» k m « Vao loo Wax Ic « 2SC M AX SUS V MA V MA wm s ; A 100 5.0 225 100 300 4.0 100 5.0 300 100 375 2.0 125 5.0 325 100 400 2.5 @ hit . È (125*C k V MA MIN MAX 300 375 400 20 20


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    PDF 2N5239 2N5240 2N5241 2N5240 TWX-510-224-6582 ioH151- O-114 2n5241 jantx to-53

    Untitled

    Abstract: No abstract text available
    Text: Microsemi NPN Transistors Part Number NPN 2N3491 2N3489 2N3492 2N5854 2N7368 2N5622 2N5624 2N5626 2N5288 2N5289 2N5628 2N1724 2N6128 2N6S10 2N6511 2N6512 2N6514 2N6513 2N5241 2N6544 2N1902 2N1904 2N6S61 2N6S82 2N6584 2N6S85 2N6588 2N6580 2N6583 2N6586 2N6S89


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    PDF O-254 NPN-18

    2N5240

    Abstract: 2N323 2N5241
    Text: HIGH VOLTACI TRANSISTORS PT TYPE NO. 5.0 5.0 5.0 100 100 125 2N5239 2N5240 * 2N5241 225 300 325 9 <§ <a lc lc Vcio ?us 25*C M A X MA V Watts A VCEO 100 100 100 ICiO V cex lc hrE V ebo 125*0 V MA V 300 375 400 4.0 2.0 2.5 300 375 400 MA 4.0 2.0 5.0 M IN M AX


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    PDF 2N5239 2N5240 2N5241 2N5239 2N323? 2N5240 2N323 2N5241

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    DTS-425

    Abstract: 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 2N5936 2N5937
    Text: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce


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    PDF Sfi4fl35E T-33-15 Tc-29Â 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 DTS-425 2N5936 2N5937

    2N5866

    Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
    Text: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75


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    PDF 5-500V 2n1487 2n1488 2n1489 2n1490 5n5883 2n5886 2n5884 2n5929 2n5930" 2N5866 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


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    PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487

    2n5863

    Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
    Text: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V


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    PDF 0QD007fl T0-102 2n5863 MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447