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    2N5675 Price and Stock

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    2N5675 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5675 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=100 / Ic=2 / Hfe=50-150 / fT(Hz)=50M / Pwr(W)=1 Original PDF
    2N5675 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5675 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5675 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5675 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N5675 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N5675

    Abstract: No abstract text available
    Text: 2N5675 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original
    2N5675 O205AD) 1-Aug-02 2N5675 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5675 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original
    2N5675 O205AD) 19-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5675 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original
    2N5675 O205AD) 17-Jul-02 PDF

    BD607

    Abstract: BDY17 sd1536-1 mj2940 motorola RCA1C07 bd608
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on fT tON r hFE ICBO (CE)set Toper Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) Max (°C) 275m 275m 275m 140 140 140 140 140 140 PD Package Style D vices 20 Watts or More, (Cont'd)


    Original
    BD607 BD608 BDS10 BDS13 2SD369 2SD3690 2N5621 2N5622 2SD369Y BDY17 sd1536-1 mj2940 motorola RCA1C07 PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1998 SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N5661 2N5662 2N5663 2N5664 2N5664-SM 2N5665 2N5665-SM 2N5666 2N5666-SM 2N5667 2N5671 2N5671 CECC 2N5671 CECC 2N5672 2N5672 CECC 2N5672 CECC 2N5675 2N5676 2N5679 2N5680 2N5681 2N5681-SM


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    2N5661 2N5662 2N5663 2N5664 2N5664-SM 2N5665 2N5665-SM 2N5666 2N5666-SM 2N5667 PDF

    transistor YA

    Abstract: Solitron Devices pnp, 200 V, 20A 2N5675 code Transistor ya
    Text: SOLITRON DEVICES INC 4fiE D • a3bflbOE DQD37b7 ^olitron Devices, Inc. S P E C I F I C A T I O N S N0” "Hb ■ S O D T 33 17 2N5675 TYPE: PNP SILICON TRANSISTOR MAXIMUM RATINGS CASE: T 0 " 5 Voltage, Collector to Base VCB0 .


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    DQD37b7 2N5675 -10mA -125V -500mA 200mA -50mA 10MHz transistor YA Solitron Devices pnp, 200 V, 20A 2N5675 code Transistor ya PDF

    2N5866

    Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
    Text: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75


    OCR Scan
    5-500V 2n1487 2n1488 2n1489 2n1490 5n5883 2n5886 2n5884 2n5929 2n5930" 2N5866 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447 PDF

    2N5385

    Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388
    Text: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO


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    flS5402a 2N5348 O-111 2N5349 2N5384 2N5385 2NXXXX 2N5480 2N5672 2N5675 TO114 package 2N5388 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2n5480

    Abstract: No abstract text available
    Text: K □ □ □ ° Q ru ru lr X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o CD r- CO CD CD CD IO lO Ó Ó Ó Ó Ó 1— 1 — 1— f— I— to to CO CO to Ó Ó Ó Ó Ó f— 1— 1— 1— 1— TO-3 TO-39/TO-5 TO-111 TO-61 TO-3 » TO-3 T0-3 TO-59 T0-111


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    O-39/TO-5 O-111 T0-111 O-111 24UNF 2n5480 PDF

    Germanium drift transistor

    Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
    Text: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of


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    orporation/464 CH-8105 Germanium drift transistor 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor PDF

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


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    11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 PDF

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-3, TO-39 le MAX = 3-50A V c e o (SUS) = 40-100V PNP Power Transistors NPN Typ. No. conplMMnt W hFE&c/Vc* (mln-màx A/V) VCE(SAT) ©IC/IB (V© A/A) 10 10 10 10 25-90 @1/2 25-90 @1/2 50-150 @ 1/2 50-150 @1/2 1 @4/4


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    0-100V 2N6330 2N6331 2N6327 2N6328 2N6436 2N6437 2N6438 2N6377 2N6378 PDF

    LC51

    Abstract: No abstract text available
    Text: HI-REL SEUELAB SEMELABE BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 2N5611 2N5612 2N5613 2N5614 2N5615 2N5616 2N5617 2N5618 2N5619 2N5620 2N5621 2N5622 2N5623 2N5629


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    A1331 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 LC51 PDF