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    Microchip Technology Inc 2N5676

    POWER BJT
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    2N5676 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N5676 Semelab Bipolar PNP Device in a Hermetically Sealed TO66 Metal Package - Pol=PNP / Pkg=TO66 / Vceo=100 / Ic=2 / Hfe=50-150 / fT(Hz)=50M / Pwr(W)=2 Original PDF
    2N5676 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5676 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5676 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5676 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5676 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N5676 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5676

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2N5676 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・High transition frequency APPLICATIONS ・For use as high-frequency drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Emitter


    Original     		PDF 2N5676 -125V; -100mA 2N5676

    2N5676

    Abstract: No abstract text available
    Text: 2N5676 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original     		PDF 2N5676 O213AA) 1-Aug-02 2N5676

    Untitled

    Abstract: No abstract text available
    Text: 2N5676 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original     		PDF 2N5676 O213AA) 30-Jul-02

    2N5676

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N5676 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·High transition frequency APPLICATIONS ·For use as high-frequency drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector


    Original     		PDF 2N5676 -125V; -100mA 2N5676

    B0530

    Abstract: MPSU57 motorola 2SA958 2N2882 ppc power transistor
    Text: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 SOT69504 SOT69604 SOT69604 SOT3504 SOT3504 SOT3504 SOT3512 SOT3512 ~~~ggJ2 25 30 2N6180 2SA1008 2SA1395M B03700 B03700 B03720 B03720 SOT69512 ~~+~~~~~ 35 40 SOT69612 MM5007 NSOU57 SOT3508 SOT3508 SOT3508


    Original     		PDF RCA1A04 SML69604 SML69612 SML3504 SML3508 SML3512 SML3516 2N2882 2N3207 BLX41 B0530 MPSU57 motorola 2SA958 ppc power transistor

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


    Original     		PDF 2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


    Original     		PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB LTD 37E T> | fil33167 0000D23 3 1 TVpe No. Reliability Polarity Option 2N5656 2N5657 2N5663 2N5664 2N5665 SCREEN HI-REL HI-REL NPN NPN NPN NPN NPN 2N5666 2N5667 2N5671 2N56722N5675 HI-REL HI-REL CECC CECC HI-REL NPN NPN NPN NPN PNP 2N5676 2N5679 2N5680


    OCR Scan     		PDF fil33167 0000D23 2N5656 2N5657 2N5663 2N5664 2N5665 2N5666 2N5667 2N5671

    Untitled

    Abstract: No abstract text available
    Text: May 1998 SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N5661 2N5662 2N5663 2N5664 2N5664-SM 2N5665 2N5665-SM 2N5666 2N5666-SM 2N5667 2N5671 2N5671 CECC 2N5671 CECC 2N5672 2N5672 CECC 2N5672 CECC 2N5675 2N5676 2N5679 2N5680 2N5681 2N5681-SM


    OCR Scan     		PDF 2N5661 2N5662 2N5663 2N5664 2N5664-SM 2N5665 2N5665-SM 2N5666 2N5666-SM 2N5667

    NES 2N5672

    Abstract: 2N4904 5330-30 D0D00S4 2N5867 2N3713 2N3714 2N3715 2N3716 2N3789
    Text: NE 111 E N G L A N D SEMICONDUCTOR STE » • LSbHTTa D0D0054 434 « N E S '7 > 3 5 - o / = 3 -5 0 A VcEO SUS = 4 0 -1 0 0 V fx = 2-6 M Hz lc(MAX) PIMP TO-3 Case 8 0 3 Case 8 0 4 Type No. NPN Complé­ ment VCEO <V) 1C (MAX) (A) (SUS> VCE (SAT) tlFE IC/VCE


    OCR Scan     		PDF 0-100V D0D00S4 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 2N3716 NES 2N5672 2N4904 5330-30 2N5867

    2N5385

    Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388
    Text: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO


    OCR Scan     		PDF flS5402a 2N5348 O-111 2N5349 2N5384 2N5385 2NXXXX 2N5480 2N5672 2N5675 TO114 package 2N5388

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2n5480

    Abstract: No abstract text available
    Text: K □ □ □ ° Q ru ru lr X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o CD r- CO CD CD CD IO lO Ó Ó Ó Ó Ó 1— 1 — 1— f— I— to to CO CO to Ó Ó Ó Ó Ó f— 1— 1— 1— 1— TO-3 TO-39/TO-5 TO-111 TO-61 TO-3 » TO-3 T0-3 TO-59 T0-111


    OCR Scan     		PDF O-39/TO-5 O-111 T0-111 O-111 24UNF 2n5480