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Microchip Technology Inc 2N5607 POWER BJT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5607	Bulk			100	1 - 10 - 100 $37.2901 1000 $37.2901 10000 $37.2901	Buy Now
Avnet Americas	2N5607	Bulk		36 Weeks	100	1 - 10 - 100 $39.7584 1000 $35.71918 10000 $35.71918	Buy Now
Mouser Electronics	2N5607					1 - 10 - 100 $40.16 1000 $40.16 10000 $40.16	Get Quote
Newark	2N5607	Bulk			100	1 - 10 - 100 $37.29 1000 $35.87 10000 $35.87	Buy Now
Future Electronics	2N5607				100	1 - 10 - 100 $39.85 1000 $39.85 10000 $39.85	Buy Now

Microchip Technology Inc	2N5607			36 Weeks		1 $40.16 10 $40.16 100 $40.16 1000 $40.16 10000 $40.16	Buy Now
Onlinecomponents.com	2N5607					1 - 10 - 100 $35.61 1000 $35.61 10000 $35.61	Buy Now
NAC	2N5607				8	1 $40.99 10 $40.99 100 $37.75 1000 $34.99 10000 $34.99	Buy Now
Master Electronics	2N5607					1 - 10 - 100 $35.61 1000 $35.61 10000 $35.61	Buy Now
Solid State Devices Inc (SSDI) 2N5607
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2N5607		30		1	1 $8.96 10 $4.48 100 $4.1816 1000 $4.1816 10000 $4.1816	Buy Now
Quest Components	2N5607		24			1 $12 10 $6 100 $6 1000 $6 10000 $6	Buy Now

2N5607 Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5607	Semelab	Bipolar PNP Device in a Hermetically Sealed TO66 Metal Package - Pol=PNP / Pkg=TO66 / Vceo=80 / Ic=5 / Hfe=30-90 / fT(Hz)=60M / Pwr(W)=25	Original	PDF
2N5607	API Electronics	5 Amps PNP Transistors	Scan	PDF
2N5607	API Electronics	5 AMPS PNP Transistors	Scan	PDF
2N5607	API Electronics	Short form transistor data	Short Form	PDF
2N5607	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N5607	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N5607	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N5607	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N5607	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2N5607	PPC Products	Transistor Short Form Data	Scan	PDF
2N5607	Semico	PNP Silicon Power Transistors / Low Level Amplifiers	Scan	PDF
2N5607	Solidev Semiconductors	Solid State Products (Transistor Guide)	Scan	PDF
2N5607	Solitron Devices	Planar Power Transistor	Scan	PDF

2N5607 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
5609 Abstract: DATASHEET 5609 2*5609 2N5607 2N5609 2N5605 5609 c 2N5611 Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications	Original	2N5605 2N5607 2N5609 2N5611 2N5605 2N5607/5609 5609 DATASHEET 5609 2*5609 5609 c 2N5611	PDF
2N5607 Abstract: No abstract text available Text: 2N5607 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	2N5607 O213AA) 1-Aug-02 2N5607	PDF
5609 Abstract: DATASHEET 5609 2N5605 2*5609 2N5607 2N5609 2N5611 Text: Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications	Original	2N5605 2N5607 2N5609 2N5611 2N5605 2N5607/5609 5609 DATASHEET 5609 2*5609 2N5611	PDF
5609 Abstract: DATASHEET 5609 2N5609 5609 c 2N5607 S 5609 2N5605 2N5611 ic 5611 Text: Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications	Original	2N5605 2N5607 2N5609 2N5611 2N5605 2N5607/5609 5609 DATASHEET 5609 5609 c S 5609 2N5611 ic 5611	PDF
2N5286 DATASHEET Abstract: 2N5005 2N5286 SDT3775 2N5287 2N5003 2N5151 2N5153 2N5384 2N5385 Text: Device Type VCEO hFE V Min/Max @ IC (A) 2N5003 2N5005 2N5151 2N5153 2N5286 2N5287 2N5384 2N5385 2N5404 2N5405 2N5406 2N5407 2N5408 2N5409 2N5410 2N5411 2N5605 2N5607 2N5609 2N5611 2N5613 2N5615 2N5617 2N5619 2N6190 2N6192 SDT3301 SDT3302 SDT3303 SDT3304	Original	2N5003 2N5005 2N5151 2N5153 2N5286 2N5287 2N5384 2N5385 2N5404 2N5405 2N5286 DATASHEET 2N5005 2N5286 SDT3775 2N5287 2N5003 2N5151 2N5153 2N5384 2N5385	PDF
Untitled Abstract: No abstract text available Text: 2N5607 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	2N5607 O213AA) 30-Jul-02	PDF
2N3775 Abstract: 2N3202 2N3203 Text: 8440355 SPACE POWER 89C ELECTRONICS SPACE POWER ELECTRONICS "fll 00105 D T- 3 3 -o/ DlF\|fl44[ 3SS QDDD10S 3 Hi-Rel PLANAR POWER 5 W PUP FOR DETAILED S P E C I F I C A T I O N S C O N T A C T E N G I N E E R I N G Breakdown Voltages TYPE CASE V 2N3202 2N3203	Original	QDDD10S 2N3202 2N3203 2N3204 2N3719 2N3720 2N3775 2N3776 2N3777 2N3778	PDF
BD119 Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20	Original	AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR	PDF
BD160 Abstract: 2SC3303 2SD1147 to-53 2sb550 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO Max Max toN Max ON) Mln (Hz) (A) (8) PD r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .	Original	2N3192 2N1208 2N1250 2N2384 2N4902 2N5867 2N5869 2N4905 2N5068 2N4914 BD160 2SC3303 2SD1147 to-53 2sb550	PDF
2SB616 NEC Abstract: B0952 SOT3323 6u60 2N3185 B0952F Text: POWER SILICON PNP Item Number Part Number I C 5 10 20 25 30 35 40 50 60 70 80 200 200 140 140 200 200 400 400 200 200 2SA1469S 2SA1259 B0223 SML3705 SML3728 SML3777 SML3323 SML3327 2N3177 2N3181 2N3185 2N3189 2N3193 2N3197 SOT3723 SOT3723 SOT3723 SOT3731	Original	Sol18 O-220AB O-220 OT-186 OT3303 OT3323 2SB616 NEC B0952 SOT3323 6u60 2N3185 B0952F	PDF
2N2891 Abstract: No abstract text available Text: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE\| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1	Original	A4403SS DDDD101 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2891	PDF
Untitled Abstract: No abstract text available Text: 8440355 SPACE POWER ELECTRONICS SPACE POWER ELECTRONICS , J " D -o/ 89C 00104 ST D E I A4403S5 ••DD1D4 1 30W@T =100°C C FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T Breakdown Voltages TYPE CASE 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026	Original	A4403S5 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3163 2N3164 2N3165	PDF
2N3340 Abstract: 2N3581 2N2520 2N5609 2N5003 2N5005 2N5287 2N5312 2N5316 2N5607 Text: 8134693 SEMICOA MD ] e \| 0134t. ^ □□QDIE'J 1 \| _,T :<5 7 - 0 \ PNP SILICON POWER TRANSISTORS Cont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Type No. PNP Dissipation @25°C (Case) Watts 2N5287 2N5003 2N5005 2N5607 2N5609 2N5316 2N5312	OCR Scan	2N5287 2N5003 2N5005 2N5607 2N5609 2N5316 2N5312 2N6186 2N6187 2N5853 2N3340 2N3581 2N2520 2N5609	PDF
N6211 Abstract: 23911 jan2N6211 Text: Micmsemi PNP Transistors . P art N um ber ' \| M icrosem i l D ivision fr PPC, , PPC, 2N5605 2N5607 PPC, PPC, 2N5608 PPC, 2N5609 PPC, 2N5611 PPC, TIP30 PPC, TIP30A PPC, TIP30B PPC, TIP30C PPC, 2N4999 PPC, 2N5001 PPC, 2N6420 PPC, 2 N 6211 PPC,	OCR Scan	JANTXV2N3741 T0-220 T0-22C) O-220 N6211 23911 jan2N6211	PDF

2N5286 Abstract: 2N3171 2N3172 2N3196 2N3173 2N3174 2N3184 2N3183 2n5601 TO111 package Text: u l i J E L E C T R O N I C S , INC. -13 COLLECTOR CURRENT = 5 AMPS PNP TYPES—Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N3185 2N318* 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204	OCR Scan	2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N5286 2N3196 2n5601 TO111 package	PDF
JAN2N3996 Abstract: 2N4307 ISM22 2n3183 Text: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100	OCR Scan		PDF
2N5385 Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388 Text: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO	OCR Scan	flS5402a 2N5348 O-111 2N5349 2N5384 2N5385 2NXXXX 2N5480 2N5672 2N5675 TO114 package 2N5388	PDF
1N5438 Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi	OCR Scan	27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175	PDF
4116 2n Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442 Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE	OCR Scan	2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442	PDF
2NS604 Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302 Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75	OCR Scan	2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302	PDF
2N5286 Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562 Text: SOLITRON DEVICES INC ^ D eT\| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT	OCR Scan	2N2657 2N2658 2N2877 O-111 2N2878 2N2879 2N2880 2N5286 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562	PDF
SILICON TRANSISTOR CORP Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060 Text: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP TVS07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V	OCR Scan	8E54022 FE20-120 30MHz fTTo40M 50MHz 2N4863 2N5662 N5663 2N5333 SILICON TRANSISTOR CORP STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060	PDF
N5408 Abstract: SDT3324 N5404 2N5286 2N5609 2N5287 2n5601 2N5153 2N5333 2N5384 Text: 27 SILICON POWER TRANSISTORS CUR R E N T G A IN S A T U R A T IO f >1 VO LTA G ES @ TYPE NUMBER 5 CASE TYPE V CBO V AMP SILICON PNP V CEO V V EBO V h FE M IN . I M A X . V CE V I >C A V CE s V BE(s) V I V 'c A 1 ’b A Observe (—) Negative Polarity 2N5153	OCR Scan	2N5153 2N5286 O-111-I 2N5287 2N5333 2N5384 O-111-1 2IM5404 2IM5405 N5408 SDT3324 N5404 2N5609 2n5601	PDF
4233A Abstract: 535x 184 324 DIODE 2N5383 2N3055C Text: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8	OCR Scan	533XCD01 534XCD02 535XCQ01 2N1063 2N107Û 4233A 535x 184 324 DIODE 2N5383 2N3055C	PDF

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2N5607 Price and Stock

Microchip Technology Inc 2N5607

Solid State Devices Inc (SSDI) 2N5607

2N5607 Datasheets (13)

2N5607 Datasheets Context Search

5609

2N5607

5609

5609

2N5286 DATASHEET

Untitled

2N3775

BD119

BD160

2SB616 NEC

2N2891

Untitled

2N3340

N6211

2N5286

JAN2N3996

2N5385

1N5438

4116 2n

2NS604

2N5286

SILICON TRANSISTOR CORP

N5408

4233A