FA 23843

Abstract: 23843 23842 IC 23842 FA2384323843 23921 2N6246 23919
Contextual Info: Micmsemi PNP Transistors Part Number PNP 2N5312 2N586S 2N5677 2N5737 2N5316 2N5318 2NS738 2N5314 2NS872 2N6318 2N5007 2N5009 2N6594 2N5741 2N5742 2N5871 2N6317 2N5853 2N7369 2N5621 2N5623 2N5625 2N5290 2N5291 2N5627 2N6127 2N6246 2N6469 2N6247 2N6248 2N6226

TO61

Abstract: 2N5007 2N5009 2N5290 2N5291 2N5312 2N5314 2N5316 2N5318 2N5386
Contextual Info: Device Type VCEO hFE V Min/Max @ I C (A) 2N5007 2N5009 2N5290 2N5291 2N5312 2N5314 2N5316 2N5318 2N5386 2N5621 2N5623 2N5625 2N5627 2N5677 2N5737 2N5738 2N5739 2N5740 2N5853 2N6127 2N6248 SDT3105 SDT3106 SDT3107 SDT3108 SDT3109 SDT3115 SDT3116 SDT3117 SDT3118

2u 62 diode

Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

2N3340

Abstract: 2N3581 2N2520 2N5609 2N5003 2N5005 2N5287 2N5312 2N5316 2N5607
Contextual Info: 8134693 SEMICOA MD ] e | 0134t. ^ □□QDIE'J 1 | _,T :<5 7 - 0 \ PNP SILICON POWER TRANSISTORS Cont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Type No. PNP Dissipation @25°C (Case) Watts 2N5287 2N5003 2N5005 2N5607 2N5609 2N5316 2N5312

T100C

Contextual Info: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1

2N5286

Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Contextual Info: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT

2N6226

Abstract: 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385
Contextual Info: A P I E LECTRONICS INC 0043592 Ëb A P I ELECTRONICS DE INC I DÜMBSTE 26C.00Z31 DDDD231 □ »T-BS-il CONTINUED D ev ice No C a se 2N6262 2N6350 2N6351 2N6352 T O -3 T O -33 T O -3 3 TO6 6 /3 TO6 6 /3 T O -3 T O -3 T O -3 T O -3 T O -66 T O -3 T O -3 T O -3

2n5292

Abstract: 2N6109 2N6111 2N6288 B0533 2N6107 BS5750 2M6292 1-12-N 2N6290
Contextual Info: MAGNA M agnaîec mm mm & BS5750 1CZ -vL - Stockist Level A Qualification Pending 2N 6107/09/11 2N 6288/90/92 GENERAL PURPOSE COMPLEMENTARY PAIRS D ESC R IPTIO N The 2N6107, 2N6109, 2N6111, 2N6288, 2N6290 and 2N6292 are epitaxial-base silicon transistors in

120v 10a transistor

Abstract: o25m 2N5291 npn 120v 10a transistor
Contextual Info: SOLITRON DEVICES INC fib DE I fiBbfikDa D002S0b 5 | 'f'-jjELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHING PN P EPITAXIAL PLANAR POWER TRANSISTOR * FORMERLY 63 CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 A Aluminum Collector: Polished Silicon

2N6127

Abstract: 2N6354 2N5007 2N6262 2N6350 2N6351 2N6352 2N6353 2N6383 2N6384
Contextual Info: - 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VcBO VCEO (sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

TO61 package

Abstract: TO111 package 2N6262 2N6226 2N6353 2N5007 2N6350 2N6351 2N6352 2N6354
Contextual Info: 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO VCEO sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

tip340

Abstract: 2sb705 nec BUW23 2sA747A sanken 2SA747A BUW32A B0246C 2SB705 BOX20 2SA747 sanken
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 35 40 >= 50 2SA747 2SA747 2SA878 2SA1067 2SA1040 TIP340 2SA1072 2SA1077 2~1:J10;j2K 55 60 2SB955K 2SA1007 2SA1232R 2SA1232Q 2SA1232P 2N6231 BOX20 BOX20 2SA747A ~~p~~1U6 65 70 2SB705 2SB863 2SA1265

2N6262

Abstract: 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 DDD0231
Contextual Info: A P I E LECTRONICS INC 0043592 Ëb A P I ELECTRONICS DE INC I DÜMBSTE 26C.00Z31 DDDD231 □ »T-BS-il CONTINUED D ev ice No C a se 2N6262 2N6350 2N6351 2N6352 T O -3 T O -33 T O -3 3 TO6 6 /3 TO6 6 /3 T O -3 T O -3 T O -3 T O -3 T O -66 T O -3 T O -3 T O -3

2N5854

Contextual Info: 8440355 SPACE 89C~T 011TJ POWER'~£~LECTRONTCS~ D < 3 2 . M i DE|ALIMOBSS •ODDIID i | SPACE POWER ELECTRONICS Hi-Rel PLANAR P O W E R — 1 0 AMP PtSP f*^ .470 .500 MAX -*< NOTE 2 .050MAX. NOTE 2 .260 7340 L i .080 .076 .360 M I N . - .968 ~ .962 I , r .670

Contextual Info: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232

2n5347

Abstract: a/TO111 2n5100
Contextual Info: 8254022 S I L I CON T R A N S I S T O R CORP 88D 0 0 7 9 4 “ûû D Ì T | a 2 5 4 0 2 2 00007=14 0 NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Polarity lc Max Amps 2N4999 2N5000 2N5001 2N5002 2N5003 PNF NPN PNP NPN PNP 2.0 2.0 2.0 5,0

Contextual Info: 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO VCEO sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

2N5287

Contextual Info: 8440355 SPACE POWER 89C ELECTRONICS SPACE POWER ELECTRONICS "fll 00105 D T- 3 3 -o/ DlF|fl44[ 3SS QDDD10S 3 Hi-Rel PLANAR POWER 5 W PUP FOR DETAILED S P E C I F I C A T I O N S C O N T A C T E N G I N E E R I N G Breakdown Voltages TYPE CASE V 2N3202 2N3203

2N5291

Contextual Info: A P I ELECTRONICS INC ^ 0043592 A P I ELECTRONICS D eT| 00435^5 OODOaSl □ T INC U -7- S 3 - " I 26C 0 0 2 3 L COLLECTOR CURRENT = 1 0 AMPS NPN TYPES - CONTINUED Device No C ase 2N6262 2N6350 2N6351 2N6352 TO -3 T O -33 TO -3 3 TO66/3 TO66/3 TO -3 TO -3