MV1403
Abstract: 210PF
Text: MV1403 TUNING VARACTOR DESCRIPTION: The ASI MV1403 is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA FEATURES: • High Capacitance: 140 – 210pF • High Q: 200 Min. Millimeters MAXIMUM RATINGS 12 V V I 250 mA PDISS
|
Original
|
MV1403
MV1403
D0-204AA
210pF
Ct-2/Ct-10
210PF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: fX S ific o n ix SMM11P20 in c o r p o r a te d P-Channel Enhancement Mode Transistor T0-204AA TO-3 BOTTOM VIEW PRODUCT SUMMARY V (BR)DSS r DS(ON) •d (V) (A) (A) -200 0.50 -1 1 1 DRAIN (CASE) 2 GATE 3 SOURCE ABSO LU TE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1
|
OCR Scan
|
SMM11P20
T0-204AA
10peration
|
PDF
|
mv1404
Abstract: No abstract text available
Text: MV1404 TUNING VARACTOR DESCRIPTION: The ASI MV1404 is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA FEATURES: • High Capacitance: 90 – 144pF • High Q: 200 Min. Millimeters MAXIMUM RATINGS 12 V V I 250 mA PDISS
|
Original
|
MV1404
MV1404
D0-204AA
144pF
Ct-2/Ct-10
|
PDF
|
transistor 206
Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3
|
OCR Scan
|
2N6050
O-204AA
2N6051
2N6052
2N6285
2N6286
2N6287
O-254AA
2N7371
T0-204AA
transistor 206
2N7370
AN-750
2N6057
2N6058
2N6059
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N5142 asi TUNING VARACTOR DIODE DESCRIPTION: The 1N5142 is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA -nrB MAXIMUM RATINGS - 250 mA If Vr 60 V P diss 400 mW @ TA = 25 °C Tj -65 °C t o +175 °C T stg -65 °C to +200 °C
|
OCR Scan
|
1N5142
1N5142
D0-204AA
|
PDF
|
Rad Hard in Fairchild for MOSFET
Abstract: 1E14 2E12 FRM234D FRM234H FRM234R equivalent components of transistor 772
Text: FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, , 0V, m, d rd, Package • 7A, 250V, RDS on) = 0.70Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
|
Original
|
FRM234D,
FRM234R,
FRM234H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
Rad Hard in Fairchild for MOSFET
1E14
2E12
FRM234D
FRM234H
FRM234R
equivalent components of transistor 772
|
PDF
|
1E14
Abstract: 2E12 FRM230D FRM230H FRM230R Rad Hard in Fairchild for MOSFET
Text: FRM230D, FRM230R, FRM230H 8A, 200V, 0.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 200V, RDS on = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
|
Original
|
FRM230D,
FRM230R,
FRM230H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
1E14
2E12
FRM230D
FRM230H
FRM230R
Rad Hard in Fairchild for MOSFET
|
PDF
|
4N50
Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB
|
OCR Scan
|
34tclt
0e7117
IRF430-433/IRF830-833
MTM/MTP4N45/4N50
t-39-11
O-22QAB
IRF430
IRF431
IRF432
IRF433
4N50
IRF830
irf4321
MTP4N45
IRF430
IRF 5054
MTP4N50
MTM4N50
MK48Z02B-20
IRF431
|
PDF
|
IRFAG40
Abstract: No abstract text available
Text: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
|
Original
|
IRFAG40
O-204AA/AE)
IRFAG40
|
PDF
|
IRFAG50
Abstract: No abstract text available
Text: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
|
Original
|
IRFAG50
O-204AA/AE)
electrical252-7105
IRFAG50
|
PDF
|
FRM9240D
Abstract: 1E14 2E12 FRM9240H FRM9240R Rad Hard in Fairchild for MOSFET
Text: FRM9240D, FRM9240R, FRM9240H 7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Title RM9 0D, M9 0R, M9 0H bt A, 0V, 20 m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, ,0V, 20 m, d rd, Package • 7A, -200V, RDS on) = 0.720Ω TO-204AA
|
Original
|
FRM9240D,
FRM9240R,
FRM9240H
-200V,
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
FRM9240D
1E14
2E12
FRM9240H
FRM9240R
Rad Hard in Fairchild for MOSFET
|
PDF
|
IRF9130
Abstract: IRF9130 mosfet gate drive for mosfet irf9130 JANTX2N6804 JANTXV2N6804
Text: PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804 HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International
|
Original
|
90549C
IRF9130
JANTX2N6804
JANTXV2N6804
O-204AA/AE)
MIL-PRF-19500/562]
-100V
parellelin252-7105
IRF9130
IRF9130 mosfet
gate drive for mosfet irf9130
JANTX2N6804
JANTXV2N6804
|
PDF
|
inverter MOSFET 900V 3A
Abstract: IRFAF40
Text: PD - 90581 IRFAF40 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAF40 BVDSS 900V RDS(on) 2.5Ω ID 4.3Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
|
Original
|
IRFAF40
O-204AA/AE)
p252-7105
inverter MOSFET 900V 3A
IRFAF40
|
PDF
|
IRH3130
Abstract: IRH4130 IRH7130 IRH8130
Text: PD - 90676D RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AA/AE IRH7130 100V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7130 IRH3130 IRH4130 IRH8130 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si)
|
Original
|
90676D
T0-204AA/AE)
IRH7130
IRH3130
IRH4130
IRH8130
1000K
O-204AA
MIL-STD-750,
IRH3130
IRH4130
IRH7130
IRH8130
|
PDF
|
|
|
IRF140
Abstract: irf140 ir IRF1401
Text: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
|
Original
|
IRF140
O-204AA/AE)
param252-7105
IRF140
irf140 ir
IRF1401
|
PDF
|
irf9240
Abstract: No abstract text available
Text: PD - 90420 IRF9240 200V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF9240 BVDSS -200V RDS(on) 0.5Ω ID -11A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
|
Original
|
IRF9240
O-204AA/AE)
-200V
electrical252-7105
irf9240
|
PDF
|
IRF4401
Abstract: IRF440 IRF44
Text: PD - 90372A IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF440 500V 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
|
Original
|
0372A
IRF440
O-204AA/AE)
--TO-204AA
IRF4401
IRF440
IRF44
|
PDF
|
IRF240
Abstract: mosfet IRF240
Text: PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE IRF240 200V, N-CHANNEL Product Summary Part Number IRF240 BVDSS 200V RDS(on) 0.18Ω ID 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
|
Original
|
O-204AA/AE)
IRF240
IRF240
mosfet IRF240
|
PDF
|
IRF250
Abstract: irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247
Text: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International
|
Original
|
90338E
IRF250
JANTX2N6766
JANTXV2N6766
O-204AA/AE)
MIL-PRF-19500/543]
an52-7105
IRF250
irf250 datasheet
IRF 543 MOSFET
JANTX2N6766
JANTXV2N6766
avalanche diode 30A
IRF250 TO-247
|
PDF
|
1E14
Abstract: 2E12 2N7274D 2N7274H 2N7274R
Text: REGISTRATION PENDING Currently Available as FRM230 D, R, H 2N7274D, 2N7274R 2N7274H March 2001 Features Radiation Hardened N-Channel Power MOSFETs Package • 8A, 200V, RDS(on) = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
|
Original
|
FRM230
2N7274D,
2N7274R
2N7274H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
1E14
2E12
2N7274D
2N7274H
2N7274R
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N5140A asi TUNING VARACTOR DIODE DESCRIPTION: The 1N5140A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA Millimeters Inches Dim: Min Max Min Max A 5.84 7.62 0.230 0.300 250 mA B 2.16 2.72 0.085 0.107 D 0.46 0.56 0.018
|
OCR Scan
|
1N5140A
1N5140A
D0-204AA
|
PDF
|
MTM4N50
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTM4N50 TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:
|
Original
|
O-204AA
MTM4N50
MTM4N50
|
PDF
|
BUZ211
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ211 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:
|
Original
|
O-204AA
BUZ211
BUZ211
|
PDF
|
MTM15N45
Abstract: TO-204AA
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTM15N45 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:
|
Original
|
O-204AA
MTM15N45
MTM15N45
TO-204AA
|
PDF
|
