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Microchip Technology Inc JANTX2N6058 TRANS NPN DARL 80V 12A TO3
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Master Electronics	JANTX2N6058					1 - 10 - 100 $61.37 1000 $61.37 10000 $61.37	Buy Now
Microchip Technology Inc 2N6058 PNP POWER TRANSISTOR SILICON AMP
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Microchip Technology Inc	2N6058			36 Weeks		1 $51.06 10 $51.06 100 $51.06 1000 $51.06 10000 $51.06	Buy Now

Onlinecomponents.com	2N6058					1 - 10 - 100 $45.27 1000 $45.27 10000 $45.27	Buy Now
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Master Electronics	2N6058					1 - 10 - 100 $45.27 1000 $45.27 10000 $45.27	Buy Now
Microchip Technology Inc JAN2N6058 TRANS NPN DARL 80V 12A TO3
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DigiKey	JAN2N6058	Bulk			100	1 - 10 - 100 $47.5201 1000 $47.5201 10000 $47.5201	Buy Now
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Microchip Technology Inc	JAN2N6058		120	36 Weeks		1 $51.17 10 $51.17 100 $51.17 1000 $51.17 10000 $51.17	Buy Now
NAC	JAN2N6058	Tray			6	1 $52.21 10 $52.21 100 $48.09 1000 $44.57 10000 $44.57	Buy Now

EBV Elektronik	JAN2N6058			37 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	JAN2N6058					1 - 10 - 100 $45.37 1000 $45.37 10000 $45.37	Buy Now
Microchip Technology Inc JANTXV2N6058 TRANS NPN DARL 80V 12A TO3
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DigiKey	JANTXV2N6058	Bulk			100	1 - 10 - 100 $87.83 1000 $87.83 10000 $87.83	Buy Now
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Microchip Technology Inc	JANTXV2N6058			36 Weeks		1 $94.58 10 $94.58 100 $94.58 1000 $94.58 10000 $94.58	Buy Now
NAC	JANTXV2N6058	Tray			3	1 $96.51 10 $96.51 100 $88.89 1000 $82.39 10000 $82.39	Buy Now

Master Electronics	JANTXV2N6058					1 - 10 - 100 $86.51 1000 $86.51 10000 $86.51	Buy Now
VPT Components JAN2N6058 NPN POWER TRANSISTOR - Bulk (Alt: JAN2N6058)
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TTI	JAN2N6058	Bulk			15	1 - 10 - 100 $64.46 1000 $64.46 10000 $64.46	Buy Now

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2N6058 Datasheets (47)

Part	Manufacturer	Description	Datasheet Type	PDF
2N6058	Comset Semiconductors	Power Complementary Silicon Transistors - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6058	Microsemi	TRANS DARLINGTON NPN 80V 12A 3TO-3 - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6058	Motorola	Darlington Complementary Silicon Power Transistor - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6058	On Semiconductor	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6058	On Semiconductor	Darlington Complementary Silicon Power Transistor	Original	PDF
2N6058	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6058	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N6058	Boca Semiconductor	DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Scan	PDF
2N6058	Central Semiconductor	Darlington Bipolar Transistor, NPN, 80V at Tc=25C, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Scan	PDF
2N6058	Central Semiconductor	POWER DARLINGTON TRANSISTORS (METAL)	Scan	PDF
2N6058	Crimson Semiconductor	EPITAXIAL BASE / PLANAR Transistors	Scan	PDF
2N6058	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
2N6058	General Electric	12A N-P-N monolithic darlington power transistor. - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Scan	PDF
2N6058	LAMBDA	Semiconductor Data Book V1 1988	Scan	PDF

2N6058	Mospec	POWER TRANSISTORS(12A,150W) - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Scan	PDF
2N6058	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N6058	Motorola	European Master Selection Guide 1986	Scan	PDF
2N6058	Motorola	Power Transistor Selection Guide	Scan	PDF
2N6058	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N6058	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF

2N6058 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N6058 Abstract: 2N6059 Text: Product Specification www.jmnic.com 2N6058/2N6059 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High gain ・High current ・High dissipation ・Complement to type 2N5883/2N5884 APPLICATIONS ・They are intended for use in power linear	Original	2N6058/2N6059 2N5883/2N5884 2N6058 2N6059 120mA 2N6058 2N6059	PDF
Untitled Abstract: No abstract text available Text: 2N6058+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.750	Original	2N6058	PDF
2n6059 Abstract: 100 amp darlington transistors 2N6058 2n6052 Text: ON Semiconductort PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general−purpose amplifier and low frequency switching applications. 2N6058 2N6059* • High DC Current Gain — • hFE = 3500 Typ @ IC = 5.0 Adc Collector−Emitter Sustaining Voltage — @ 100 mA	Original	2N6052* 2N6058 2N6052, 2N6059 2N6059* 100 amp darlington transistors 2n6052	PDF
1N5825 Abstract: 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA Text: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN 2N6058 2N6059* . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain —	Original	2N6052/D 2N6052* 2N6058 2N6059 2N6052, 1N5825 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA	PDF
2N6058 Abstract: 2N6059 2N5883 2N5884 Text: SavantIC Semiconductor Product Specification 2N6058 2N6059 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current ;high dissipation ·DARLINGTON ·Complement to type 2N5883;2N5884 APPLICATIONS ·They are intended for use in power linear	Original	2N6058 2N6059 2N5883 2N5884 2N6058 120mA 2N6059 2N5884	PDF
Untitled Abstract: No abstract text available Text: 2N6058 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2N6058 O204AA) 18-Jun-02	PDF
2N605 Abstract: 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224 Text: PNP NPN 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 ~~ DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. . High DC Current hFE = 3500 Gain — Typ o Collector-Emitter @ IC = 5.0 Adc	Original	2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050, 80Vdc 2N6051, 2N605 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224	PDF
2n6050 Abstract: 2n6057 2N6052 Text: 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 PNP NPN w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base	Original	2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050,	PDF
Untitled Abstract: No abstract text available Text: 2N6058 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2N6058 O204AA) 16-Jul-02	PDF
transistor 725 Abstract: 2N6058 Text: 2N6058 80 V - Darlington Complementary NPN Selicon Power Transistor 7.25 Transisto. Page 1 of 2 Enter Your Part # Home Part Number: 2N6058 Online Store 2N6058 Diodes 80 V - Darlington Complementary N PN Selicon Power Transistors Transistor Integrated Circuits	Original	2N6058 2N6058 com/2n6058 transistor 725	PDF
2N6058 Abstract: 2N6059 Text: TECHNICAL DATA 2N6058 JANTX, JTXV 2N6059 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/502 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current	Original	2N6058 2N6059 MIL-PRF-19500/502 1000C 2N6058 2N6059 O-204AA)	PDF
1N5825 Abstract: 2N6052 2N6058 2N6059 MSD6100 3 pin transistor 10 amp Text: ON Semiconductort PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general−purpose amplifier and low frequency switching applications. 2N6058 2N6059* • High DC Current Gain — • • w hFE = 3500 Typ @ IC = 5.0 Adc	Original	2N6052* 2N6058 2N6059* 2N6052, 2N6059 2N6052/D 1N5825 2N6052 2N6058 2N6059 MSD6100 3 pin transistor 10 amp	PDF
2N6058 Abstract: 2N6059 2N5883 2N5884 Text: Inchange Semiconductor Product Specification 2N6058 2N6059 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current ;high dissipation ·DARLINGTON ·Complement to type 2N5883;2N5884 APPLICATIONS ·They are intended for use in power linear	Original	2N6058 2N6059 2N5883 2N5884 2N6058 120mA 2N6059 2N5884	PDF
2N6059 Abstract: 2N6058 100C 1000C Text: TECHNICAL DATA 2N6058 JANTX, JTXV 2N6059 JANTX, JTXV Processed per MIL-PRF-19500/502 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation 1	Original	2N6058 2N6059 MIL-PRF-19500/502 1000C 2N6058 2N6059 O-204AA) 100C 1000C	PDF

500 watts audio amplifiers schematic diagram Abstract: 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058 2N6059 Text: 3875081 G E SOLID STATE 01 DE \| 3ß?SDfil □□17E3Q □ 1~ T ~ 33- 1 3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic	OCR Scan	17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 500 watts audio amplifiers schematic diagram 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058	PDF
2N6052 Abstract: No abstract text available Text: SEMTECH CORP 5ÛE D m 613^13=1 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK 00032^0 T2b 2N6051, 2N6052, 2N6058 2N6059 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2N6052, 2N6059 100 C o lle cto r B ase Voltage Vdc VCBO 80 2 N 6 0 5 1 , 2N6058	OCR Scan	2N6051, 2N6052, 2N6058 2N6059 00Q33D2 2N6058, 2N6052	PDF
Untitled Abstract: No abstract text available Text: Back to Bipolar Darlington Transistors PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose am plifier and low frequency	OCR Scan	2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6051, 2N6058	PDF
2N6052 Abstract: 2N6057 2N6050 2N6051 2N6058 2N6059 Text: 2N6050,2N6051,2N6052 PNP / 2N6057, 2N6058.2N6059 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( I- = 100 mA, I- = 0 ) Collector Cutoff Current	OCR Scan	2N6050 2N6051 2N6052 2N6057, 2N6058 2N6059 2N6050, 2N6057 2N6051,	PDF
RCA-2N6050 Abstract: n6050 2N60S Text: 3875081 6 E SOLID STATE Ql DE \| 3fl?SDfil □□17E3Q □ 1~ T~ 3 3 - ?3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic	OCR Scan	17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere RCA-2N6050 n6050 2N60S	PDF
2N6050 Abstract: 2N6051 2N6052 2N6057 2N6058 2N6059 2n60 2N60S Text: DARLINGTOM COMPLEMENTARY SILICON-POWER TRANSISTORS NPN PNP 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 .designed for general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Bult-in Base-Emitter Shunt Resistors.	OCR Scan	2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6057 2N60S8 2N6058 2N6059 2n60 2N60S	PDF
2N6220 Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 Text: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079	OCR Scan	2N6033 2N6047 2N6049 2N6049E 2N6050 750-12k 2N6051 2N6052 2N6220 2N6256 2N6258 PNP 2N60	PDF
Untitled Abstract: No abstract text available Text: 27 K a trin a Road Chelm sford, M A 01824 Tel: 978 256-3321 Fax: (978)250-1046 W eb: www.stcsemi.com A PO W ERHOUSE hFE B vceo TO-3 Â à 41 i VcE(SAT) M ax @ I c/I b (volts) M in-M ax (a m p s/vo lts) (vo lts) (a m p s) 2N6058 80 12 750- 18000 6/3 2.0 6 / .024	OCR Scan	2N6058 2N6059 2N6350 2N6351 14-PtN	PDF
2N6059 Abstract: 2N6051 2N6058 2N60S2 2N6052 DARLINGTON 3A 100V npn Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6051, 2N6052, 2N6058,2N6059 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ‘ MAXIMUM RATINGS PA RA M ET ER Collector Emitter Voltage 2N6051, 2N6058 2N6052, 2N6059 Collector Base Voltage 2N 6 05 1, 2N6058 2N6052, 2N6059	OCR Scan	2N6051, 2N6052, 2N6058 2N6059 2N6058, 2N6059 2N6052 2N6059) 2N6051 2N60S2 DARLINGTON 3A 100V npn	PDF
wf vqe 24 d Abstract: WF VQE 13 2N6050 M6052 WF VQE 11 E WF vqe 24 e 2N6051 2N6052 2N6057 2N6058 Text: PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose amplifier and low frequency switching applications. • High DC Current G ainhpE = 3500 Typ @ lc - 5.0 Adc	OCR Scan	2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6057 2N6051, 2N6058 wf vqe 24 d WF VQE 13 M6052 WF VQE 11 E WF vqe 24 e 2N6051 2N6052	PDF

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2N6058 Datasheets (47)

2N6058 Datasheets Context Search

2N6058

Untitled

2n6059

1N5825

2N6058

Untitled

2N605

2n6050

Untitled

transistor 725

2N6058

1N5825

2N6058

2N6059

500 watts audio amplifiers schematic diagram

2N6052

Untitled

2N6052

RCA-2N6050

2N6050

2N6220

Untitled

2N6059

wf vqe 24 d