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    2N6052 Price and Stock

    Microchip Technology Inc 2N6052

    Bipolar Transistors - BJT Power BJT
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    Mouser Electronics 2N6052
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    Onlinecomponents.com 2N6052
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    EBV Elektronik 2N6052 37 Weeks 100
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    Microchip Technology Inc Jan2N6052

    Darlington Transistors Power BJT
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    Microchip Technology Inc Jantx2N6052

    Darlington Transistors Power BJT
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    onsemi 2N6052G

    POWER BIPOLAR TRANSISTOR, 12A I(C), 100V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-204AA, METAL, 2 PIN
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    Quest Components 2N6052G 13
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    RCA 2N6052

    TRANSISTOR,BJT,DARLINGTON,PNP,100V V(BR)CEO,12A I(C),TO-3
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    Quest Components 2N6052 12
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    Find more 2N6052 price and stock on Findchips.com

    2N6052 Datasheets (57)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6052 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS DARL PNP 100V 12A TO-3 Original PDF
    2N6052 Comset Semiconductors Power Complementary Silicon Transistors - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6052 Microsemi TRANS DARLINGTON PNP 100V 12A 3TO-3 - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6052 Motorola Darlington Complementary Silicon Power Transistor - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6052 On Semiconductor 2N6052 - TRANSISTOR 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3, BIP General Purpose Power Original PDF
    2N6052 On Semiconductor Darlington Complementary Silicon Power Transistors Original PDF
    2N6052 On Semiconductor Darlington Complementary Silicon Power Transistor Original PDF
    2N6052 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6052 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6052 Boca Semiconductor DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6052 Central Semiconductor Darlington Bipolar Transistor, PNP, 100V at Tc=25C, TO-3, 2-Pin - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6052 Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan PDF
    2N6052 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
    2N6052 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N6052 General Electric 12A P-N-P monolithic darlington power transistor. - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6052 LAMBDA Semiconductor Data Book V1 1988 Scan PDF
    2N6052 Mospec POWER TRANSISTORS(12A,150W) - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6052 Motorola The European Selection Data Book 1976 Scan PDF
    2N6052 Motorola Power Transistor Selection Guide Scan PDF
    2N6052 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF

    2N6052 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    100 amp npn darlington power transistors

    Abstract: 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052
    Text: MOTOROLA Order this document by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.


    Original     		2N6050/D 2N6050 2N6052* 2N6057 2N6059 2N6050, 2N6051, 2N6058 2N6052, 100 amp npn darlington power transistors 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052 PDF

    2N6050

    Abstract: 2N6057 2N6052 2N6058 2N6051 2N6059
    Text: POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are


    Original     		2N6050, 2N6051 2N6052 2N6057, 2N6058 2N6059 2N6050 2N6057 2N6051 2N6058 2N6050 2N6057 PDF

    2N6052

    Abstract: 2N6051 1000C 100C JANTX 2N6052
    Text: TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices Qualified Level 2N6051 JAN JANTX JANTXV 2N6052 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


    Original     		MIL-PRF-19500/501 2N6051 2N6052 1000C O-204AA) 2N6052 2N6051 1000C 100C JANTX 2N6052 PDF

    2n6059

    Abstract: 100 amp darlington transistors 2N6058 2n6052
    Text: ON Semiconductort PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general−purpose amplifier and low frequency switching applications. 2N6058 2N6059* • High DC Current Gain — • hFE = 3500 Typ @ IC = 5.0 Adc Collector−Emitter Sustaining Voltage — @ 100 mA


    Original     		2N6052* 2N6058 2N6052, 2N6059 2N6059* 100 amp darlington transistors 2n6052 PDF

    1N5825

    Abstract: 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA
    Text: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN 2N6058 2N6059* . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain —


    Original     		2N6052/D 2N6052* 2N6058 2N6059 2N6052, 1N5825 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA PDF

    transistor 8026

    Abstract: pnp 150w darlington transistor to3 package
    Text: 2N6052 MECHANICAL DATA PNP DARLINGTON SILICON POWER TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 VCEO = 100V IC = 12A PD = 150W 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)


    Original     		2N6052 O-204AA) transistor 8026 pnp 150w darlington transistor to3 package PDF

    2N605

    Abstract: 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224
    Text: PNP NPN 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 ~~ DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. . High DC Current hFE = 3500 Gain — Typ o Collector-Emitter @ IC = 5.0 Adc


    Original     		2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050, 80Vdc 2N6051, 2N605 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features http://onsemi.com • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc


    Original     		2N6052 2N6052/D PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6052+JANTX Transistors PNP Darlington Transistor Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.750


    Original     		2N6052 PDF

    2n6050

    Abstract: 2n6057 2N6052
    Text: 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 PNP NPN w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base


    Original     		2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050, PDF

    2N6052

    Abstract: No abstract text available
    Text: 2N6052 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		2N6052 O204AA) 31-Jul-02 2N6052 PDF

    2N6052G

    Abstract: 1N5825 2N6052 2N6059 MSD6100 npn transistor TO-3 5 amp 140 volts
    Text: 2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA


    Original     		2N6052 O-204AA 2N6052G 1N5825 2N6052 2N6059 MSD6100 npn transistor TO-3 5 amp 140 volts PDF

    transistor 206

    Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3


    OCR Scan     		2N6050 O-204AA 2N6051 2N6052 2N6285 2N6286 2N6287 O-254AA 2N7371 T0-204AA transistor 206 2N7370 AN-750 2N6057 2N6058 2N6059 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR VcEO sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051A 80 2N6052A PACKAGE DEVICE TYPE PNP TO-3 TO-204AA TO-254AA hrE @ Id VCE min/max @ A/V ^ C E (sa t) @ Ic/Iß V @ A/A c ¥* p fx (MHz) 750/18000@6/3


    OCR Scan     		2N6050 2N6051A 2N6052A O-204AA 2N6285 2N6286A 2N6287A 2N7371A 2N6057A PDF

    500 watts audio amplifiers schematic diagram

    Abstract: 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058 2N6059
    Text: 3875081 G E SOLID STATE 01 DE | 3ß?SDfil □□17E3Q □ 1~ T ~ 33- 1 3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic


    OCR Scan     		17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 500 watts audio amplifiers schematic diagram 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058 PDF

    2N6052

    Abstract: No abstract text available
    Text: SEMTECH CORP 5ÛE D m 613^13=1 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK 00032^0 T2b 2N6051, 2N6052, 2N6058 2N6059 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2N6052, 2N6059 100 C o lle cto r B ase Voltage Vdc VCBO 80 2 N 6 0 5 1 , 2N6058


    OCR Scan     		2N6051, 2N6052, 2N6058 2N6059 00Q33D2 2N6058, 2N6052 PDF

    Untitled

    Abstract: No abstract text available
    Text: Back to Bipolar Darlington Transistors PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose am plifier and low frequency


    OCR Scan     		2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6051, 2N6058 PDF

    Untitled

    Abstract: No abstract text available
    Text: r z 7 SGS-THOMSON “ 7# [MO MHLi(m]»KS 2N6050/51/52 2N6057/58/59 COMPLEMENTARY DARLINGTON • HIGH GAIN ■ HIGH CURRENT ■ HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon epi­ taxial base PNP transistors in monolithic Darlington


    OCR Scan     		2N6050/51/52 2N6057/58/59 2N6050, 2N6051 2N6052 2N6057, 2N6058 2N6059 PDF

    RCA-2N6050

    Abstract: n6050 2N60S
    Text: 3875081 6 E SOLID STATE Ql DE | 3fl?SDfil □□17E3Q □ 1~ T~ 3 3 - ?3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic


    OCR Scan     		17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere RCA-2N6050 n6050 2N60S PDF

    2N6050

    Abstract: 2N6051 2N6052 2N6057 2N6058 2N6059 2n60 2N60S
    Text: DARLINGTOM COMPLEMENTARY SILICON-POWER TRANSISTORS NPN PNP 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 .designed for general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Bult-in Base-Emitter Shunt Resistors.


    OCR Scan     		2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6057 2N60S8 2N6058 2N6059 2n60 2N60S PDF

    2N6220

    Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051
    Text: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079


    OCR Scan     		2N6033 2N6047 2N6049 2N6049E 2N6050 750-12k 2N6051 2N6052 2N6220 2N6256 2N6258 PNP 2N60 PDF

    2N6050

    Abstract: No abstract text available
    Text: SGS-THOMSON 2N6050/51/52 2N6057/58/59 [¡»æSLitgraiMOOi COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . 2N6050, 2N6052,2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES • HIGH GAIN . HIGH CURRENT . HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon


    OCR Scan     		2N6050/51/52 2N6057/58/59 2N6050, 2N6052 2N6057 2N6059 2N6051 2N6057, 2N6050 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6052 m \\ SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6052 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 k. I MAX. I MAXIMUM RATINGS 12 A lc -100 V ce 150 W @ T C= 2 5 °C P diss -65 °C to +200 °C


    OCR Scan     		2N6052 2N6052 PDF

    2N6059

    Abstract: 2N6051 2N6058 2N60S2 2N6052 DARLINGTON 3A 100V npn
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6051, 2N6052, 2N6058,2N6059 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ‘ MAXIMUM RATINGS PA RA M ET ER Collector Emitter Voltage 2N6051, 2N6058 2N6052, 2N6059 Collector Base Voltage 2N 6 05 1, 2N6058 2N6052, 2N6059


    OCR Scan     		2N6051, 2N6052, 2N6058 2N6059 2N6058, 2N6059 2N6052 2N6059) 2N6051 2N60S2 DARLINGTON 3A 100V npn PDF