IRFAG50
Abstract: No abstract text available
Text: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
|
Original
|
PDF
|
IRFAG50
O-204AA/AE)
electrical252-7105
IRFAG50
|
Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFET IRFAG50 • Low RDS on Power MOSFET Transistor In A Hermetic Metal TO3 Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
|
Original
|
PDF
|
IRFAG50
860mJ
O-204AA)
|
IRFAG50
Abstract: LE17
Text: N-CHANNEL POWER MOSFET IRFAG50 • Low RDS on Power MOSFET Transistor In A Hermetic Metal TO3 Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
|
Original
|
PDF
|
IRFAG50
860mJ
O-204AA)
IRFAG50
LE17
|
Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFET IRFAG50 • Low RDS on Power MOSFET Transistor In A Hermetic Metal TO3 Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
|
Original
|
PDF
|
IRFAG50
860mJ
O-204AA)
|
Untitled
Abstract: No abstract text available
Text: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
|
Original
|
PDF
|
IRFAG50
O-204AA/AE)
|
mosfets
Abstract: SHD239508 Theta-JC IRFAG50
Text: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel SM Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 1000 5.6 3.5 200 2 @ 3.5 0.34 IRFAG50
|
Original
|
PDF
|
IRFAG50
SHD239508
mosfets
SHD239508
Theta-JC
IRFAG50
|
IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
|
Original
|
PDF
|
30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
|
shd2188
Abstract: sensitron
Text: SHD218508 SHD218508A SHD218508B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2023, REV. Formerly Part Number SHD2188/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 2.0 Ohm, 5.6A MOSFET Hermetic Ceramic Package Fast Switching Low RDS on
|
Original
|
PDF
|
SHD2188/A/B
SHD218508
SHD218508A
SHD218508B
IRFAG50
shd2188
sensitron
|
IRF470
Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
Text: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0
|
Original
|
PDF
|
IRF331
O-204AA/TO-3
IRF332
2N6012
O-247
IRFP352R
IRFP353R
IRF470
IRFP240R
IRF840CF
IRF449
IRF340A
irf520 power
IRF341R
IRFP20
irf460 to-247
IRF331R
|
Untitled
Abstract: No abstract text available
Text: SHD218508 SHD218508A SHD218508B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2023, REV. Formerly Part Number SHD2188/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 2.0 Ohm, 5.6A MOSFET Hermetic Ceramic Package Fast Switching Low RDS on
|
Original
|
PDF
|
SHD2188/A/B
SHD218508
SHD218508A
SHD218508B
IRFAG50
|
SHD239608
Abstract: shd239606
Text: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM
|
Original
|
PDF
|
O-254,
O-257)
SHD226413
SHD226401
SHD226402
SHD226403
SHD226404
SHD226405
SHD226406
SHD226407
SHD239608
shd239606
|
IRFAG50
Abstract: SHD218508 SHD218508A SHD218508B shd2188
Text: SHD218508 SHD218508A SHD218508B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2023, REV. Formerly Part Number SHD2188/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 1000 Volt, 2.0 Ohm, 5.6A MOSFET • • • • Hermetic Ceramic Package Fast Switching
|
Original
|
PDF
|
SHD218508
SHD218508A
SHD218508B
SHD2188/A/B
IRFAG50
IRFAG50
SHD218508
SHD218508A
SHD218508B
shd2188
|
IXFM50N20
Abstract: IRF9140 SHD239508 SHD239613 SHD2181 SHD2181A SHD2182 SHD2183 SHD2184 SHD218413
Text: POWER MOSFETS HERMETIC POWER MOSFETs N-CHANNEL, SURFACE MOUNT TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V BR DSS Volts SHD218413 30 SHD2181 60 SHD2182 100 SHD2183 200 SHD2184 400 SHD2185 500 SHD2186 800 SHD2187 900 SHD2188 1000 SHD218413A 30 SHD2181A 60
|
Original
|
PDF
|
SHD218413
SHD2181
SHD2182
SHD2183
SHD2184
SHD2185
SHD2186
SHD2187
SHD2188
SHD218413A
IXFM50N20
IRF9140
SHD239508
SHD239613
SHD2181
SHD2181A
SHD2182
SHD2183
SHD2184
SHD218413
|
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
|
Original
|
PDF
|
2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
|
|
|
T4 DIODE
Abstract: irfag52
Text: HE 0 I 4âSS4S3 000^2=14 7 | Data Sheet No. PD-9.582A INTERNATIONAL R E C T I F I E R . T-39-13 INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED IRFAG50 HEXFET TRANSISTORS IRFAG5S N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET TO-204AA TO-3 Hermetic Package
|
OCR Scan
|
PDF
|
T-39-13
IRFAG50
O-204AA
G-277
IRFAG50,
IRFAG52
0QCH301
G-278
T4 DIODE
|
irfm9034
Abstract: No abstract text available
Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel
|
OCR Scan
|
PDF
|
IRFAF30
IRFAF40
IRFAF50
IRFAG30
IRFAG40
IRFAG50
IRF9130
JANTX2N6804
JANTXV2N6804
IRF9140
irfm9034
|
2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
|
OCR Scan
|
PDF
|
IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
|
IRF8C30
Abstract: mfe9200 1RFBC40 IRFD110 IRFD123 IRFD9010 IRFD113 IRFAF50 IRFAF52 IRFAG50
Text: 257 - f M « tt fi ± Vd s or € t Vd g h V £ fë (Ta=25t3) Vg s (V) Id 1GSS Pt> * /CH * /CH (A) (W) (nA) V g s th) 1DSS Vg s (V) (MA) Vd s (V) (V) (V) ft m m '14 (Ta=25°C) Ciss Vd s = Vg s Id (mA) Coss Crss ft Vg s -O (max) *typ V g s ( 0 ) (V) Id (A)
|
OCR Scan
|
PDF
|
IRFAF50
O-204AA
IRFAF52
1RFAG40
RFF230
O-205AF
IRFF231
T0-205AF
IRFF232
IRF8C30
mfe9200
1RFBC40
IRFD110
IRFD123
IRFD9010
IRFD113
IRFAG50
|
IRF8C30
Abstract: MFE9200 1RFBC40 1RFZ40 IRFD9010 IRFZ30 IRFAF50 IRFAF52 IRFAG50 IRFBC32
Text: 257 - f M « tt fi ± £ Vd s or € t h fë Ta=25t3 Vg s * /CH Vd g (V) Id (V) (A) m m 1GSS Pt> V g s th) 1DSS (nA) (W) (MA) Vd s (V) (V) (V) '14 (Ta=25°C) Ciss Vd s = Vg s * /CH Vg s (V) ft Id (mA) Coss Crss Vg s -O (max) *typ V g s ( 0 ) (V) Id (A) *typ
|
OCR Scan
|
PDF
|
IRFAF50
O-204AA
IRFAF52
1RFAG40
RFZ42
O-220AB
IRFZ44
MFE910
IRF8C30
MFE9200
1RFBC40
1RFZ40
IRFD9010
IRFZ30
IRFAG50
IRFBC32
|
IRF449
Abstract: 1RF9130 1RF431 IRF460 irf9243 IRFAG52 2N6B04 irf420 IRF9141 2N6761
Text: HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER TO-3 Package INTERNATIONAL R ECTIFIER SbE D 4055455 OOlOSbS □ • I«R T - 3 ^ - 0 3 N-CHANNEL Types % V IRF451 IRF453 2N6769 IRF441 IRF443 1RF431 2N6761 IRF433 IRF421 IRF423 IRF460 IRF462 IRF450 2N6770 IRF452
|
OCR Scan
|
PDF
|
IRF451
T0-204AA
IRF453
2N6769
IRF441
IRF443
1RF431
2N6761
IRF433
IRF421
IRF449
1RF9130
1RF431
IRF460
irf9243
IRFAG52
2N6B04
irf420
IRF9141
2N6761
|
irf440
Abstract: No abstract text available
Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t
|
OCR Scan
|
PDF
|
IRF9140
IRF9230
IRF9240
irf440
|
IRF460 in TO220
Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching irf460 to247 IRF250 TO-247 IRF244 Application of irf250 IRFD9120 N CHANNEL
Text: HEXFET Power MOSFETs Products From IR FullPak N-Channel FullPak Fully-isolated HEXFETs from the heatsink/enclosure , then the FullPak is for you. Until now, semiconductors were insulated from grounded heatsinks with insulating w ashers and nylon screws. Improper Installation of
|
OCR Scan
|
PDF
|
T0-240AA
IRF460 in TO220
IRF09110
IRF448
of IRF9540 and IRF540
irf460 switching
irf460 to247
IRF250 TO-247
IRF244
Application of irf250
IRFD9120 N CHANNEL
|
IRF1644
Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Text: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.
|
OCR Scan
|
PDF
|
100HF20-100HF160.
100JB05L-100JB12L.
10CTF10-10CTF40.
10CTQ140
10D05-10010.
10DF1100F8
10JF1-10JF4.
10JQ030-10JQ100.
1OJTF10-10JTF40
10MQ040-10MQ090.
IRF1644
12CTQ030-12CT0045
10JQ030-10JQ100
IRL0024
31D003-31D010
IRKT210-16
IRF1401
6cw 78
IRF140-143
IRFT003
|
RF432
Abstract: IRF449 IRF460 IRFac32
Text: International ID o H l f i û r [t S HEXFFT MOSFETs r ^ « e c im e r Hermetic Package 7Ü-3 N-Channel Part Number V q s Drain Source Voltage Volts IRF422 IRF420 /RF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 IRF450 2N6770 IRF462 IRF460 500 IRFAC32
|
OCR Scan
|
PDF
|
IRF422
IRF420
/RF432
2N6762
IRF430
IRF442
IRF440
IRF449
IRF448
IRF452
RF432
IRF460
IRFac32
|