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    IRF331 Search Results

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    IRF331 Price and Stock

    Rochester Electronics LLC IRF331

    N-CHANNEL POWER MOSFET
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    DigiKey IRF331 Bulk 127
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    Infineon Technologies AG IRF3315

    MOSFET N-CH 150V 27A TO220AB
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    DigiKey IRF3315 Tube 50
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    Infineon Technologies AG IRF3315S

    MOSFET N-CH 150V 21A D2PAK
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    DigiKey IRF3315S Tube 250
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    Infineon Technologies AG IRF3315L

    MOSFET N-CH 150V 21A TO262
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    DigiKey IRF3315L Tube 50
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    Infineon Technologies AG IRF3315PBF

    MOSFET N-CH 150V 23A TO220AB
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    RS IRF3315PBF Bulk 269 1
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    IRF331 Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF331 Intersil 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 ?, N-Channel Power MOSFETs Original PDF
    IRF331 Fairchild Semiconductor N-Channel Power MOSFETs, 5.5A, 350 V/400V Scan PDF
    IRF331 FCI POWER MOSFETs Scan PDF
    IRF331 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF331 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF331 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. Scan PDF
    IRF331 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF331 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
    IRF331 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRF331 Motorola Switchmode Datasheet Scan PDF
    IRF331 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF331 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF331 Unknown FET Data Book Scan PDF
    IRF331 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    IRF331 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF331 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF331 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF331 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF331 National Semiconductor N-thannel Power MOSFETs Scan PDF
    IRF331 Samsung Electronics N-CHANNEL POWER MOSFETS Scan PDF

    IRF331 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF3315

    Abstract: No abstract text available
    Text: PD -91623A APPROVED IRF3315 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.07Ω G Description ID = 27A S Fifth Generation HEXFETs from International Rectifier


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    -91623A IRF3315 O-220 IRF3315 PDF

    IRF470

    Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
    Text: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0


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    IRF331 O-204AA/TO-3 IRF332 2N6012 O-247 IRFP352R IRFP353R IRF470 IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R PDF

    IRF 504

    Abstract: K02A
    Text: PD- 95760 IRF3315SPbF IRF3315LPbF • Lead-Free 1 IRF3315S/LPbF 2 IRF3315S/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H L OT CODE 8024 AS S E MB L ED ON WW 02, 2000 IN T HE AS S E MB L Y LINE "L"


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    IRF3315SPbF IRF3315LPbF IRF3315S/LPbF F530S EIA-418. IRF 504 K02A PDF

    irf332

    Abstract: irf330 harris
    Text: IRF330, IRF331, IRF332, IRF333 S E M I C O N D U C T O R 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    IRF330, IRF331, IRF332, IRF333 TA17414. irf332 irf330 harris PDF

    IRF3315

    Abstract: No abstract text available
    Text: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-145-64 IRF3315 HEXFET TO-220 PD -91623A APPROVED IRF3315 HEXFET Power MOSFET l l l l l Advanced Process Technology


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    IRF3315 O-220 -91623A IRF3315 PDF

    irf7309

    Abstract: IRF7507TR IRF7342 IRF7210 DO-30 IRLML2803TR IRF964
    Text: International Rectifier MOSFETs and Rectifiers MOSFETs Continued HEXFETª Power MOSFETs Ñ D2PAK (cont.) N-Channel (continued) Mfr.Õs Type IRF3710S IRF1310NS IRF540NS IRF530NS IRF3415S IRF3515S IRF3315S IRFS31N20D IRF640NS IRF630NS IRF644S IRF740S IRF710S


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    OT-223 IRF3710S IRF7324 IRF1310NS IRF731450 1N4049 300U80A† 150L10A† DO-30 irf7309 IRF7507TR IRF7342 IRF7210 IRLML2803TR IRF964 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF331 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)5.5 I(DM) Max. (A) Pulsed I(D)3.5 @Temp (øC)100 IDM Max (@25øC Amb)22 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


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    IRF331 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF331R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)5.5 I(DM) Max. (A) Pulsed I(D)3.5 @Temp (øC)100 IDM Max (@25øC Amb)22 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


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    IRF331R PDF

    IRF1010

    Abstract: No abstract text available
    Text: PD - 94825 IRF3315PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 150V RDS on = 0.082Ω G Description ID = 21A S Fifth Generation HEXFETs from International Rectifier


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    IRF3315PbF O-220 O-220AB. O-220AB IRF1010 IRF1010 PDF

    Marking Code ly

    Abstract: IRL3103L marking LY IRF3315SPBF
    Text: PD- 95760 IRF3315SPbF IRF3315LPbF • Lead-Free www.irf.com 1 08/24/04 IRF3315S/LPbF 2 www.irf.com IRF3315S/LPbF www.irf.com 3 IRF3315S/LPbF 4 www.irf.com IRF3315S/LPbF www.irf.com 5 IRF3315S/LPbF 6 www.irf.com IRF3315S/LPbF www.irf.com 7 IRF3315S/LPbF D2Pak Package Outline


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    IRF3315SPbF IRF3315LPbF IRF3315S/LPbF F530S Marking Code ly IRL3103L marking LY IRF3315SPBF PDF

    TO-262 Package

    Abstract: IRL3103L
    Text: PD- 95760 IRF3315SPbF IRF3315LPbF • Lead-Free www.irf.com 1 08/24/04 IRF3315S/LPbF 2 www.irf.com IRF3315S/LPbF www.irf.com 3 IRF3315S/LPbF 4 www.irf.com IRF3315S/LPbF www.irf.com 5 IRF3315S/LPbF 6 www.irf.com IRF3315S/LPbF www.irf.com 7 IRF3315S/LPbF D2Pak Package Outline


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    IRF3315SPbF IRF3315LPbF IRF3315S/LPbF F530S TO-262 Package IRL3103L PDF

    AN-994

    Abstract: IRF3315 IRF3315L IRF3315S MJ100015
    Text: PD - 9.1617B IRF3315S/L PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF3315S Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS(on) = 0.082Ω


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    1617B IRF3315S/L IRF3315S) IRF3315L) AN-994 IRF3315 IRF3315L IRF3315S MJ100015 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94825A IRF3315PbF l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 150V RDS on = 0.070Ω G Description ID = 23A S Fifth Generation HEXFETs from International Rectifier


    Original
    4825A IRF3315PbF O-220 O-220AB PDF

    IRF1010

    Abstract: No abstract text available
    Text: PD - 94825 IRF3315PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 150V RDS on = 0.082Ω G Description ID = 21A S Fifth Generation HEXFETs from International Rectifier


    Original
    IRF3315PbF O-220 O-220AB. O-220AB IRF1010 IRF1010 PDF

    Untitled

    Abstract: No abstract text available
    Text: In te rn a tio n a l pd-9.i 6i 7b IRF3315S/L 1QR R e c t i f i e r _PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRF3315S Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching


    OCR Scan
    IRF3315S) IRF3315L) IRF3315S/L PDF

    IRF331

    Abstract: IRF332 IRF3301 IRF333 IRF330
    Text: -Standard Power MOSFETs IRF330, IRF331, IRF332, IRF333 F ile N u m b e r 1570 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan
    IRF330, IRF331, IRF332, IRF333 50V-400V 92CS-33741 IRF332 IRF333 IRF331 IRF3301 IRF330 PDF

    IRF331R

    Abstract: IRF330R ic l00a 250M IRF332R IRF333R
    Text: _ Rugged Power MOSFETs File Number 2011 IRF330R, IRF331R, IRF332R, IRF333R Avalanche Energy Rated N-Channel Power MOSFETs 4.5A a nd 5.5A, 350V-400V ros on = 1 .0 0 and 1 .5 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan
    IRF330R, IRF331R, IRF332R, IRF333R 50V-400V IRF332R IRF333R 92CS-426S9 IRF331R IRF330R ic l00a 250M PDF

    L3103L

    Abstract: No abstract text available
    Text: PD - 9.1617B International I R Rectifier IR F 33 15S /L PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF3315S • Low-profile through-hole (IRF3315L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


    OCR Scan
    1617B IRF3315S) IRF3315L) 4A55452 L3103L PDF

    WO2M

    Abstract: IRF330 IRF331 LM 7801 IRF332 IRF333
    Text: □1 J3875081 G E SOLID STATE ¿ Ë 1 3 Û 7 S G 0 1 □□löBGM 7 W 0 1E 18304 Di T " ' 3 £H I - Standard Power MOSFETs IRF330, IRF331, IRF332, IRF333 File Number 1570 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode


    OCR Scan
    IRF330, IRF331, IRF332, IRF333 50V-400V IRF332 IRF333 WO2M IRF330 IRF331 LM 7801 PDF

    lem 732 733

    Abstract: lem 731 IRF3303 lem 733 1rf730 IRF330-333 5N40 MTP5N35 733 331 lem* 731
    Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34b‘ïb74 0 0 5 7 0 ^ □ IRF330-333/IRF730-733 M TM /M TP5N35/5N40 N-Channel Power M O SF ET s, 5.5 A, 350 V/400 V FAIRCHILD A Schlumberger Company Power And Discrete Division — Description TO-204AA TO-220AB IRF330 IRF331


    OCR Scan
    IRF330-333/IRF730-733 MTM/MTP5N35/5N40 T-39-11 O-22QAB IRF730 IRF731 IRF732 IRF733 MTP5N35 MTP5N40 lem 732 733 lem 731 IRF3303 lem 733 1rf730 IRF330-333 5N40 MTP5N35 733 331 lem* 731 PDF

    9BB.

    Abstract: No abstract text available
    Text: PD 9.1623 International IOR Rectifier IRF3315 PRELIMINARY H EXFET Power M O S F E T • • • • • Advanced Process Technology Dynamic dv/dt Rating t75°C Operating Temperature Fast Switching Fully Avalanche Rated V DSs = 150V ^ DS on = Description


    OCR Scan
    IRF3315 O-220 9BB. PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF330, IRF331y IRF332, IRF333 I ia ttr is sem conduc or 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 4.5A and 5.5A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan
    IRF330, IRF331y IRF332, IRF333 beRF333 PDF

    IRF331

    Abstract: field effect transistor IRF 900 volts irf330 transistor d 331 data Irf333
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF330 IRF331 IRF333 Pow er Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid


    OCR Scan
    IRF330 IRF331 IRF333 O-204) IRF331. field effect transistor IRF 900 volts transistor d 331 data Irf333 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1623 International IGR Rectifier IRF3315 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDss = 150 V ^D S c n = Description 0.082Q


    OCR Scan
    IRF3315 O-220 554S5 PDF