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    IRF333 Search Results

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    IRF333 Price and Stock

    Vicor Corporation VI-RF333-EXXX

    VI-RF333-EXXX 24V 24V 24V 75W
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    DigiKey VI-RF333-EXXX Bulk
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    International Rectifier IRF333

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    Bristol Electronics IRF333 1
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    Quest Components IRF333 1
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    IRF333 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF333 Intersil 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 ?, N-Channel Power MOSFETs Original PDF
    IRF333 Fairchild Semiconductor N-Channel Power MOSFETs, 5.5A, 350 V/400V Scan PDF
    IRF333 FCI POWER MOSFETs Scan PDF
    IRF333 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF333 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF333 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. Scan PDF
    IRF333 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF333 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
    IRF333 Motorola Switchmode Datasheet Scan PDF
    IRF333 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRF333 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF333 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF333 Unknown FET Data Book Scan PDF
    IRF333 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    IRF333 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF333 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF333 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF333 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF333 National Semiconductor N-thannel Power MOSFETs Scan PDF
    IRF333 Samsung Electronics N-CHANNEL POWER MOSFETS Scan PDF

    IRF333 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    irf332

    Abstract: irf330 harris
    Text: IRF330, IRF331, IRF332, IRF333 S E M I C O N D U C T O R 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF330, IRF331, IRF332, IRF333 TA17414. irf332 irf330 harris PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    IRF470

    Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
    Text: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0


    Original     		IRF331 O-204AA/TO-3 IRF332 2N6012 O-247 IRFP352R IRFP353R IRF470 IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R PDF

    CMD8

    Abstract: No abstract text available
    Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)


    OCR Scan     		DD3711b T-39-01 CMD8 PDF

    IRF331

    Abstract: IRF332 IRF3301 IRF333 IRF330
    Text: -Standard Power MOSFETs IRF330, IRF331, IRF332, IRF333 F ile N u m b e r 1570 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		IRF330, IRF331, IRF332, IRF333 50V-400V 92CS-33741 IRF332 IRF333 IRF331 IRF3301 IRF330 PDF

    IRF331R

    Abstract: IRF330R ic l00a 250M IRF332R IRF333R
    Text: _ Rugged Power MOSFETs File Number 2011 IRF330R, IRF331R, IRF332R, IRF333R Avalanche Energy Rated N-Channel Power MOSFETs 4.5A a nd 5.5A, 350V-400V ros on = 1 .0 0 and 1 .5 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		IRF330R, IRF331R, IRF332R, IRF333R 50V-400V IRF332R IRF333R 92CS-426S9 IRF331R IRF330R ic l00a 250M PDF

    WO2M

    Abstract: IRF330 IRF331 LM 7801 IRF332 IRF333
    Text: □1 J3875081 G E SOLID STATE ¿ Ë 1 3 Û 7 S G 0 1 □□löBGM 7 W 0 1E 18304 Di T " ' 3 £H I - Standard Power MOSFETs IRF330, IRF331, IRF332, IRF333 File Number 1570 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode


    OCR Scan     		IRF330, IRF331, IRF332, IRF333 50V-400V IRF332 IRF333 WO2M IRF330 IRF331 LM 7801 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF330, IRF331y IRF332, IRF333 I ia ttr is sem conduc or 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 4.5A and 5.5A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		IRF330, IRF331y IRF332, IRF333 beRF333 PDF

    IRF331

    Abstract: field effect transistor IRF 900 volts irf330 transistor d 331 data Irf333
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF330 IRF331 IRF333 Pow er Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid


    OCR Scan     		IRF330 IRF331 IRF333 O-204) IRF331. field effect transistor IRF 900 volts transistor d 331 data Irf333 PDF

    Untitled

    Abstract: No abstract text available
    Text: Type No. IRF232 IRF630 IRF631 IRF632 IRF633 9-16 2N6759 2N6760 IRF330 IRF331 IRF333 IRF730 IRF731 TO-204AA 42 T 02 04A A (42) TO-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) 70220 (37) T0204AA (42) TO-204AA (42) T 02 04A A (42) T0-204AA (42)


    OCR Scan     		IRF232 IRF233 IRF630 IRF631 IRF632 IRF633 MTP12N18 MTP12N20 2N6759 2N6760 PDF

    irf332

    Abstract: IRF331 IRF3302
    Text: H E D I 4ÖS5M52 G0Cm3t. Q | Data Sheet No. PD-9.302H INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I« R T-39-11 REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF330 IRF331 IRF332 IRF333 Product Summary 400 Volt, 1.0 Ohm HEXFET TO-204AlA TO-3 Hermetic Package


    OCR Scan     		S5M52 T-39-11 IRF330 IRF331 IRF332 IRF333 O-204 G-119 IRF330, IRF331, IRF3302 PDF

    1RF330

    Abstract: No abstract text available
    Text: MOTOROLA SC X S T R S /R IME F D I t3fci72SM OGä^fc,?! 4 | 7-3Ÿ-I/ MOTOROLA • I SEM IC O N D U C T O R TECHNICAL DATA IRF330 IRF331 IRF333 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-Mode Silico n Gate T M O S These T M O S Power FETs are designed for high


    OCR Scan     		t3fci72SM IRF330 IRF331 IRF333 IRF330, IRF333 1RF330, 1RF330 PDF

    IRF332

    Abstract: IRF3319 irf330
    Text: I LArrrti— IRF330, IRF3319 IRF332, IRF333 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		IRF330, IRF3319 IRF332, IRF333 TA17414. IRF331, RF333 IRF332 irf330 PDF

    IRF449

    Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441
    Text: - 25 2 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR


    OCR Scan     		Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA IRF449 irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441 PDF

    irf840

    Abstract: equivalent irf840 irf840 equivalent irf840 rf MTM3N55 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
    Text: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j


    OCR Scan     		IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D irf840 equivalent irf840 irf840 equivalent irf840 rf MTM3N55 PDF

    1RF321

    Abstract: IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452
    Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350


    OCR Scan     		IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 1RF321 IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 PDF

    VN64GA

    Abstract: IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
    Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90


    OCR Scan     		IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A IRF132 IRF120 IRF122 VN64GA IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150 PDF

    irf250

    Abstract: IRF133 international rectifier 2sk135 equivalent HPWR 6501 IRF350 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504
    Text: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPW R-6502 HPW R-6503 HPW R-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO -3 TO -3 TO -3 TO -3 100 120 140 160 180 200


    OCR Scan     		PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf250 IRF133 international rectifier 2sk135 equivalent HPWR 6501 IRF350 2SK133 PDF

    1RF820

    Abstract: 733 331 VN64GA CHARACTERISTICS DIODE 10SI 10 IRF332 VN4000A IRF340 IRF440 IRF450 IRF820
    Text: Ü Ü A C D ^ U /C D M i v i a iv i v ^ i v T T k iv r i i i i i v D r/\W i t i v u v i w C A lA A ^ /\ r i f^ .n \ M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING Packages: I B V qss Volts 4 5 0 -5 0 0 TO-3 TO-220


    OCR Scan     		to-220 to-39 to-237 to-92 to-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* 1RF820 733 331 VN64GA CHARACTERISTICS DIODE 10SI 10 IRF332 VN4000A IRF340 IRF820 PDF

    irf150

    Abstract: VN64GA 2SK134 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504 IRF122 IRF223
    Text: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPW R-6501 H P W R -6502 H P W R -6503 H P W R -6504 BVd s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 T O -3 T O -3 T O -3 T O -3 100 120


    OCR Scan     		PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf150 VN64GA 2SK134 2SK133 IRF223 PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


    OCR Scan     		DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E PDF

    Mosfet K 135 To3

    Abstract: IRF430 432Z til 431 IRF330 IRF331 IRF332 IRF333 IRF431 IRF432
    Text: 7 9 6 4 1 4 2 5 / M C M iM fî c c ü r r ' A M n n r ' T n -ñfl DE | ? ci t i 4 1 4E 0 0 D S 1 B 4 S c 98D ;N e 0 5134 D T ^ J f- N-CHANNEL POWER MOSFETS IRF430/431/432/433 FEATURES • • • • • • • • • Low RDS on at high voltage ' Improved inductive ruggedness


    OCR Scan     		cib414E 00DS1B4 IRF430/431/432/433 IRF330 IRF331 IRF332 IRF333 98D05134 IRF430 IRF431 Mosfet K 135 To3 432Z til 431 IRF432 PDF