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    IRF340 Price and Stock

    Thomas & Betts DIRF34040

    For Cutler Hammer Only |Abb Thomas & Betts DIRF34040
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark DIRF34040 Bulk 1
    • 1 $3289.26
    • 10 $3039.45
    • 100 $2935.36
    • 1000 $2935.36
    • 10000 $2935.36
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    Master Electronics DIRF34040
    • 1 $2851.79
    • 10 $2663.09
    • 100 $2663.09
    • 1000 $2663.09
    • 10000 $2663.09
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    Infineon Technologies AG IRF340

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Future Electronics IRF340 100
    • 1 -
    • 10 -
    • 100 $24
    • 1000 $24
    • 10000 $24
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    New Jersey Semiconductor Products, Inc. IRF340

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRF340 2,730 1
    • 1 $15.264
    • 10 $15.264
    • 100 $14.0887
    • 1000 $12.5165
    • 10000 $12.5165
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    New Jersey Semiconductor Products Inc IRF340

    TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,10A I(D),TO-240AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF340 2,184
    • 1 $16.536
    • 10 $16.536
    • 100 $16.536
    • 1000 $13.356
    • 10000 $12.72
    		Buy Now

    UNMARKED IRF340

    TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,10A I(D),TO-240AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF340 18
    • 1 $28.8
    • 10 $27.36
    • 100 $25.92
    • 1000 $25.92
    • 10000 $25.92
    		Buy Now
    Find more IRF340 price and stock on Findchips.com

    IRF340 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF340 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF340 International Rectifier HEXFET Transistor Original PDF
    IRF340 Intersil 10A, 400V, 0.550 ?, N-Channel Power MOSFET Original PDF
    IRF340 STMicroelectronics N-Channel ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE Original PDF
    IRF340 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRF340 Fairchild Semiconductor N-Channel Power MOSFETs, 10A, 350V/400V Scan PDF
    IRF340 FCI POWER MOSFETs Scan PDF
    IRF340 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF340 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF340 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF340 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF340 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
    IRF340 Motorola Switchmode Datasheet Scan PDF
    IRF340 Motorola European Master Selection Guide 1986 Scan PDF
    IRF340 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF340 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF340 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF340 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF340 Unknown FET Data Book Scan PDF
    IRF340 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRF340 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF340

    Abstract: TA17424 to204ae TB334
    Text: IRF340 Data Sheet March 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 10A, 400V • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance


    Original     		IRF340 TB334 O-204AE TA17424. IRF340 TA17424 to204ae TB334 PDF

    IRF340

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRF340 FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.55Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 11 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V


    Original     		IRF340 IRF340 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EtnL-donductoi ^Products., One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRF340 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary


    Original     		IRF340 O-204AA/AE) PDF

    IRF3401

    Abstract: IRF340
    Text: PD - 90371 IRF340 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF340 BVDSS RDS(on) 400V 0.55Ω ID 10A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		IRF340 O-204AA/AE) IRF3401 IRF340 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 90371 IRF340 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF340 BVDSS RDS(on) 400V 0.55Ω ID 10A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		IRF340 O-204AA/AE) PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF340 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D)6.0 @Temp (øC)100 IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55


    Original     		IRF340 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF340R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D)6.3 @Temp (øC)100 IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ


    Original     		IRF340R PDF

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    IRF341R

    Abstract: IRF343 IRF340R IRF342R IRF343R
    Text: Rugged Power MOSFETs _ IRF340R, IRF341R, IRF342R, IRF343R File N u m b e r 2005 Avalanche Energy Rated N-Channel Power MOSFETs 10A and 8A, 400V and 350V rDS on = 0.550 and 0.80fi N -C H A N N E L E N H A N C E M E N T M O D E Features: • Single pulse avalanche energy rated


    OCR Scan     		IRF340R, IRF341R, IRF342R, IRF343R IRF342R IRF343R 92CS-4263Â 92CS-42660 IRF341R IRF343 IRF340R PDF

    MTP8N45

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R D I• b3b?as4 aoâibîB a ime F I T-ÌÌ-I3 MOTOROLA ■ I SEM ICO NDUCTO R TECHNICAL DATA IRF340 Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF340 V d SS 400 V rDS on >D 0.55 n 10 A This TM O S Power FET is designed for high voltage, high speed


    OCR Scan     		IRF340 MTP8N45 PDF

    Untitled

    Abstract: No abstract text available
    Text: • 4 3 0 5 3 7 1 0 0 5 3 ^ 4 3 HARRIS 1T4 ■ HAS IR F340/341/342/343 IRF340R/341R/342R/343R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 0 4 A A • 10A and 8.3A , 4 0 0 V - 3 5 0 V B O T T O M V IE W • rD S on = 0 .5 5 0 and 0 .8 0 H


    OCR Scan     		F340/341/342/343 IRF340R/341R/342R/343R IRF340, IRF341, IRF342, IRF343 IRF340R, IRF341R, PDF

    IRF340

    Abstract: IRF341 IRF342 IRF343 RC9S
    Text: Standard Power MOSFETs- IRF340, IRF341, IRF342, IRF343 File N um ber Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 8 A and 10 A, 350 V - 400 V rDscom = 0.55 O and 0.8 O


    OCR Scan     		IRF340, IRF341, IRF342, IRF343 IRF343 75BVDSS IRF340 IRF341 IRF342 RC9S PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF340 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		IRF340 PDF

    T0204AA

    Abstract: No abstract text available
    Text: IRF640 IRF641 IRF642 IRF340 IRFP340 IRF341 IRFP341 IRF740 IRF741 IRF742 IRF743 IRFP440 IRF441 60 1600 750 300 E2 10 60 1600 750 300 E2 0.22 10 60 1600 750 300 E2 0.25 0.22 10 60 1600 750 300 E2 4 0.25 0.55 5 60 1600 450 150 E3 2 4 0.25 0.55 5 60 1600 450 150


    OCR Scan     		IRF640 IRF641 IRF642 IRF643 IRF340 IRFP340 IRF341 IRFP341 O-220 T0204AA PDF

    743 LEM

    Abstract: IRF340 fairchild 741 741 LEM 8N40 fairchild 742 IRF341 IRF342 IRF343 AM/amplifier LEM 741
    Text: A4 FAIRCHILD s e m i c o n d u c t o r dÊ J 34^74 DDETTDS 1 IRF340-343/IRF740-743 T - ì 1 MTM8N35/8N40 N-Channel Power M O SFET s, 10 A, 350 V/400 V F A IR C H IL D A Schlumberger Company Power And Discrete Division Description TO-204AA TO-220AB IRF340 IRF341


    OCR Scan     		IRF340-343/IRF740-743 MTM8N35/8N40 O-204AA O-220AB IRF340 IRF341 IRF342 IRF343 MTM8N35 MTM8N40 743 LEM IRF340 fairchild 741 741 LEM 8N40 fairchild 742 IRF341 IRF342 IRF343 AM/amplifier LEM 741 PDF

    DIODE S4 83A

    Abstract: irf340 DIODE M4A IRF34
    Text: HE 0 I MflSS4S5 0 DOT 14 4 Q | Data Sheet No. PD-9.371F INTERNATIONAL R E C T I F I E R - Ì Y - f 3 INTERNATIONAL- RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* IRF340 IRF341 IRF342 IRF343 HEXFET TRANSISTORS 400 VOLT, 0.55 Ohm HEXFET TO-204AA TO-3 Hermetic Package


    OCR Scan     		IRF340 IRF341 IRF342 IRF343 O-204AA G-127 IRF340, IRF341, IRF342, IRF343 DIODE S4 83A DIODE M4A IRF34 PDF

    IRF341

    Abstract: No abstract text available
    Text: iH A R R is SEMIC0NDUCT0R IRF340, IRF341 IRF342, IRF343 10A and 8.3A, 400V and 350V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 10A and 8.3A, 400V and 350V • Linear Transfer Characteristics The IRF340, IRF341, IRF342, and IRF343 are N-Channel


    OCR Scan     		IRF340, IRF341 IRF342, IRF343 IRF341, IRF343 IRF341 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF340 Advanced Power MOSFET FEATURES B ^ dss - 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^ D S o n = 0 -5 5 Q ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V


    OCR Scan     		IRF340 PDF

    IRF341

    Abstract: D86EQ2 IRF340
    Text: I M Ü IRF340,341 D86EQ2.Q1 T 10 AMPERES 400, 350 VOLTS RDS ON = 0-55 n HELD EFFECT POWER TRANSISTOR This series of N -C h annel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		IRF340 D86EQ2 00A//usec, IRF341 PDF

    ED 83

    Abstract: No abstract text available
    Text: Government/ Space Products International [^Rectifier HEXFET, CECC Qualified — Europe N-Channel Types Basic Type IRF044 IRF120 IRF130 IRF140 IRF150 IRF220 IRF230 IRF240 IRF250 IRF244 IRF320 IRF330 IRF340 IRF350 IRF420 IRF430 IRF440 IRF450 VDS V RDS(on)


    OCR Scan     		IRF044 IRF120 IRF130 IRF140 IRF150 IRF220 IRF230 IRF240 IRF250 IRF244 ED 83 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF340 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V DSS rDS on» <d IRF340 400 V 0.55 n 10 A This TM O S Pow er FET is d esigned fo r h ig h volta g e , high speed p o w e r sw itch in g a p p lica tio n s such as sw itch in g re g u lators, co n ­


    OCR Scan     		IRF340 PDF

    power mosfet j 162

    Abstract: n-channel 250V power mosfet IRF340
    Text: IRF340 A dvanced Power MOSFET FEATURES B V DSS = 400 V ^ D S o n = 0 .5 5 a ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance Id ♦ Improved Gate Charge = 1 1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V


    OCR Scan     		IRF340 power mosfet j 162 n-channel 250V power mosfet IRF340 PDF

    f341

    Abstract: 2S1214
    Text: Tfi 7 9 6 4 142 SAMSUNG ¡> F | 7 ^ 4 1 4 3 SE M IC O N D U C T O R D G D S in t, | .9 8 D O 51 1 9 I NC D T -3 f-'/3 N-CHANNEL POWER MOSFETS . - IRF340/341/342/343 FEATURES • L o w R DS on • Improved inductive ruggedness Fast switching times .


    OCR Scan     		IRF340/341/342/343 F--13 f341 2S1214 PDF