IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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30N60
Abstract: N60A 30N60A igbt 30N60 IXGH30N60U1 30N60U1 IXGH30N60AU1 IXGM30N60A
Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90
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Wei60A
30N60
30N60A
O-204AE
30N60
30N60A
30N60U1
N60A
igbt 30N60
IXGH30N60U1
IXGH30N60AU1
IXGM30N60A
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40N30
Abstract: 35n30 FM40N30 IXFH40N30
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 300 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous
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35N30
40N30
40N30
35n30
FM40N30
IXFH40N30
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75N10
Abstract: No abstract text available
Text: VDSS MegaMOSTMFET IXTH/IXTM 67 N10 IXTH/IXTM 75 N10 100 V 100 V ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 100 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 100 V
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67N10
75N10
O-204
O-247
O-204
O-247
75N10
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40N30
Abstract: IXTH40N30 IXTM35N30 IXTM40N30 40AA
Text: VDSS MegaMOSTMFET IXTH/IXTM 35 N30 IXTH 40 N30 IXTM 40 N30 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C
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35N30
40N30
O-204
O-247
O-204
40N30
IXTH40N30
IXTM35N30
IXTM40N30
40AA
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IRF150CF
Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152
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BUZ349
SFN152
YTFP152
YTF152
IRFP152
RFH35Nl0
RFK35Nl0
PB125N60HM
PB125N60HP
IRF150CF
GENTRON
2SK747A
EUM159M
2SK798
EFM159M179
YTFP150
2SK747
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IRF140
Abstract: irf140 ir IRF1401
Text: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF140
O-204AA/AE)
param252-7105
IRF140
irf140 ir
IRF1401
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IRF240
Abstract: mosfet IRF240
Text: PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE IRF240 200V, N-CHANNEL Product Summary Part Number IRF240 BVDSS 200V RDS(on) 0.18Ω ID 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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O-204AA/AE)
IRF240
IRF240
mosfet IRF240
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IRH7450
Abstract: IRH8450
Text: PD - 91807A IRH7450 IRH8450 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total
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1807A
IRH7450
IRH8450
500Volt,
1x106
IRH7450
IRH8450
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IRF250
Abstract: irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247
Text: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International
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90338E
IRF250
JANTX2N6766
JANTXV2N6766
O-204AA/AE)
MIL-PRF-19500/543]
an52-7105
IRF250
irf250 datasheet
IRF 543 MOSFET
JANTX2N6766
JANTXV2N6766
avalanche diode 30A
IRF250 TO-247
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FRK260
Abstract: No abstract text available
Text: FRK260D, FRK260R, FRK260H 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 46A, 200V, RDS on = 0.070Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRK260D,
FRK260R,
FRK260H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
FRK260
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IRF340
Abstract: TA17424 to204ae TB334
Text: IRF340 Data Sheet March 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 10A, 400V • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance
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IRF340
TB334
O-204AE
TA17424.
IRF340
TA17424
to204ae
TB334
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Untitled
Abstract: No abstract text available
Text: APT20GT60AR 600V 30A Thunderbolt IGBT TO-3 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT20GT60AR
150KHz
O-204AE)
66VCES
MIL-STD-750
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TO204AE
Abstract: No abstract text available
Text: Case Outline and Dimensions - TO-204AE
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O-204AE
TO204AE
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BUR51S
Abstract: No abstract text available
Text: BUR51S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUR51S
O204AE)
1-Aug-02
BUR51S
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2N6274
Abstract: transistor 2N6274
Text: 2N6274 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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2N6274
O204AE)
1-Aug-02
2N6274
transistor 2N6274
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BUR21
Abstract: No abstract text available
Text: BUR21 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUR21
O204AE)
1-Aug-02
BUR21
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thermafilm
Abstract: 2088AB thermasil EB107/D sync nut eb107 ierc heatsink richco Silicone Rubber 35 Shore A thermafilm 1 mhw 592
Text: AN1040/D Mounting Considerations For Power Semiconductors http://onsemi.com Prepared by: Bill Roehr APPLICATION NOTE INTRODUCTION Current and power ratings of semiconductors are inseparably linked to their thermal environment. Except for lead–mounted parts used at low currents, a heat exchanger
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AN1040/D
r14525
thermafilm
2088AB
thermasil
EB107/D
sync nut
eb107
ierc heatsink
richco Silicone Rubber 35 Shore A
thermafilm 1
mhw 592
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2N5684
Abstract: No abstract text available
Text: 2N5684 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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2N5684
O204AE)
1-Aug-02
2N5684
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Untitled
Abstract: No abstract text available
Text: This N-Channel Power MOSFETs z > Material National COOLFETsTM Semiconductor Copyrighted Case Style Pd W Tc = 25°C V D SS (V) Min l0 @ Tc = 25°C (A) Tc = 100°C (A) IRF350CF T0-204AE (42) T0-3P (43) T0-3P (43) TO-204AE (42) TO-3P (43) T0-3P (43) 150 400
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hSD113D
T-39-01
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M J16020/D SEMICONDUCTOR TECHNICAL DATA M J16020 M J16022 Advance Information S W IT C H M O D E S e rie s N PN S ilic o n P o w e r T ra n s is to rs These transistors are designed for high-voltage, high-speed, power switching in
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J16020/D
J16020
J16022
MJ16022
MJ16020
MJ16020/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BUT33/D SEMICONDUCTOR TECHNICAL DATA BUT33 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS
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BUT33/D
BUT33
97A-05
O-204AE
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BUT35
Abstract: transistors but35 CM4050
Text: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS
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b3L75S4
T-35-1?
BUT35
BUT35
transistors but35
CM4050
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mosfet IRF240
Abstract: IRF242 IRF240 IRF241 IRF243
Text: Standard Power MOSFETs- IRF240, IRF241, IRF242, IRF243 File N um ber Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 16 A and 18 A, 150 V - 200 V rDsion» - 0.18 Q and 0.22 O
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IRF240,
IRF241,
IRF242,
IRF243
IRF243
08TAIN
mosfet IRF240
IRF242
IRF240
IRF241
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