IRF244 Search Results

irf246 N

Abstract: irf244 IRF246
Contextual Info: IRF244, IRF245, IRF246, IRF247 S E M I C O N D U C T O R 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 13A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: H a r r IRF244, IRF245, IRF246, IRF247 i s SEMIC0NDUCT0R 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 13A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

irf246 N

Abstract: irf244 TA17423 VW250 pj 88 diode
Contextual Info: iH A R R is IRF244, IRF245, IRF246, IRF247 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 13A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

irf246 N

Abstract: IRF246
Contextual Info: £3 H A R R IS August IRF244, IRF245 IRF246, IRF247 N-Channel Power MOSFETs Avalanche Energy Rated 1991 Package Features T0-204A A BOTTOM VIEW • 14A and 13A, 275V - 250V • rDS on = 0 .2 8 0 and 0 .3 4 0 • Single Puls« Avalanche Energy Rated • SOA is Power-Dlssipation Limited

ED 83

Contextual Info: Government/ Space Products International [^Rectifier HEXFET, CECC Qualified — Europe N-Channel Types Basic Type IRF044 IRF120 IRF130 IRF140 IRF150 IRF220 IRF230 IRF240 IRF250 IRF244 IRF320 IRF330 IRF340 IRF350 IRF420 IRF430 IRF440 IRF450 VDS V RDS(on)

irf244

Abstract: irf246 N IRF246 44108 780I IRF245 IRF247
Contextual Info: Rugged Power MOSFETs_ IRF244, IRF245, IRF246, IRF247 File Number 2209 Avalanche-Energy-Rated N-Channel Power MOSFETs N-CHANNEL ENHANCEMENT MODE D 14 A and 13 A, 275 V and 250 V rDs on = 0.28 Cl and 0.34 Q Features: • ■ • • ■ • S ingle pulse avalanche en ergy rated

irf244

Abstract: IRF246 IRF245 IRF247 TB334 relay 12v dc 6 pin
Contextual Info: IRF244, IRF245, IRF246, IRF247 Semiconductor 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 13A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

irf244

Abstract: IRF351 IRF242 IRF243 IRF245 IRF252 1RF450 1RF430 1RF340 T0204AA
Contextual Info: - gj £ *± € ft A £ t§ <Ta=25^C Vd s or Vd g Vg s Pd Id * /CH a Ig s s rain * /CH Vg s * V) (V) (W) (A) V g s th) Id s s (nA) (V) (HA) (V) (V) (V) ft Id (nA) & & F os(on) Vd s = Vg s max Vd s m Id (on) Ciss g fs Coss ft Crss V g s =0 (max) *typ V g s

irf113

Abstract: 1RF440 1RF450 irf244 IRF242 IRF243 IRF245 IRF252 1RF340 Siliconix
Contextual Info: - ft A gj £ *± V ds or € £ Vgs t§ <Ta=25^C Pd Id m a Ig s s V gs th ) Id s s ft & F o s o n ) Vd s = & I d (on) Coss C is s g fs * /CH rain * /CH Vg s =0 ( * ty p ) ( * ty p ) (* ty p ) Id (max) (max) (max) Vd s (A) (pF) (pF) (pF) (V) (max) max Id

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

Contextual Info: H E 0 I MÖSS4SE INTERNATIONAL ÜGDÖ74S 3 | Data Sheet No. PD-9.588A T-39-13 RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFP244 IRFP245 N-CHANNEL Product Summary 250 Volt, 0.28 Ohm HEXFET TO-247AC TO-3P Plastic Package

irf244

Abstract: pd9528 irf244r
Contextual Info: 11E D I 4055452 Q QQTI Q1* ^ | Data Sheet No. PD-9.528A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IÖ R T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRF2 4 4 IRF2 4 5 N-CHANNEL 250 Volt, 0.28 Ohm HEXFET T0-204AA TO-3 Hermetic Package

IRF460 in TO220

Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching irf460 to247 IRF250 TO-247 IRF244 Application of irf250 IRFD9120 N CHANNEL
Contextual Info: HEXFET Power MOSFETs Products From IR FullPak N-Channel FullPak Fully-isolated HEXFETs from the heatsink/enclosure , then the FullPak is for you. Until now, semiconductors were insulated from grounded heatsinks with insulating w ashers and nylon screws. Improper Installation of

IRF1644

Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Contextual Info: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.

idm 73

Abstract: IRF244
Contextual Info: H EXFET Power MOSFETs International S<Ei R e c tifie r Hermetic Package TO-3 N-Channel Part Number Vos Drafn Roston Source Voltage Volts) On-State Resistance (Ohms) Iq Continuous Drain Current 25°C Case (Amps) IDM Drain Current (Amps) Pq Max Power Dissipation

Contextual Info: .W S i r 19Sr. LTECHNOLOGY in e A a LTC1156 Q u a d High Side M icro p o w e r MOSFET Driver w ith Internal C h a rg e Pump F€flTUR€S DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ ■ ■ The LTC1156 quad High side gate driver allows using low cost N-channel FETs for high side switching applications.

IRF224

Abstract: irf244 THOMSON DISTRIBUTOR 58e d IRF222 IRF352 irf362 THOMSON 58E THOMSON 58E CASE OUTLINE IRF220 IRF221
Contextual Info: THOMSON/ HtXhtl S flE D ISTRIBU TOR □ □T D • TCSK International m s Rectifier Power MOSFETs Hermetic Package TO-3 N-Channel Part Number IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF232 2N6758 IRF230 IRF242 IRF240 IRF252 IRF250

irf113

Abstract: 1RF243 irf244 IRF242 IRF243 IRF245 IRF252 1RF222
Contextual Info: - ft A gj £ *± Vd s or € £ Vg s Ig s s Pd Id * /CH Vd g a t§ <Ta=25^C V g s th) Id s s rain * /CH Id nA) & F os(on) Vd s = Vg s max ft & Id (on) Ciss g fs Coss ft Crss Vg s =0 (max) *typ V g s (0) (V) *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ)

1RF350

Abstract: 1RF320 irf244 IRF242 IRF243 IRF245 IRF252 1RF450 Siliconix
Contextual Info: - ft A gj £ *± Vd s or € £ Vg s Pd Id m a t § <Ta=25^C Ig s s Vg s Id s s th) ft & F os on) Vd s = & I d (on) Coss Ciss g fs * /CH rain * /CH Vg s = 0 (*typ) (*typ) (*typ) Id *typ Vg s *typ Id (max) (max) (max) Vd s (A) (A) (V) (S) (A) (pF) (pF) (pF)

irf211

Abstract: irf244 Irf154 IRF154 N IRF242 IRF243 IRF245 IRF252 1RF240
Contextual Info: - ft A gj £ *± Vd s or € £ Vg s Pd Id * /CH Vd g a t § <Ta=25^C I gss rain * /CH Vg s * V ) (V ) (W) (A ) Vg s t h ) I dss (n A ) (V ) (H A ) (V ) (V ) (V ) Id (n A ) ft & I d (o n ) C is s g fs C oss ft C rss Vg s =0 (m ax) * ty p (0 ) Vg s (V ) * ty p

irf244

Abstract: IRF242 IRF243 IRF245 IRF252
Contextual Info: - ft A gj £ *± Vds or € £ Vgs Pd Id * /CH Vdg a t§ <Ta=25^C I gss rain * /CH Vg s * V) (V) (W) (A) Vgs th) I dss (nA) (V) (H A ) (V) (V) (V) Id (nA) ft & I d (on) Coss Ciss g fs ft Crss Vgs =0 (max) *typ (0 ) Vg s (V) *typ (A) Id (A) Vgs (V) *typ (S)

IRFP237

Abstract: IRFP234 IRFP235 IRF246 IRF640R IRF627 irfp236 IRFP255 1RF632 IRF244
Contextual Info: TH OH SO N/ D I S T R I B U TOR 5ñE D T05t.fl73 QD D S 7 1 D 713 TCSK Power M O S F E T s R u gge d -Se rie s Power M O S F E T s — N -Channel continued 0.45 0.60 0.70 0.80 1.80 2 2.20 2.50 3 3.5 4 4.5 5 5.5 8 9 16 18 25 30 250 3.30 3.80 6.50 8.10 13

1RFZ40

Abstract: MFE9200 1rfz44 1RFD123 irfz12 IRF145 irfu9220 irfu9222 IRFZ45 IRH450
Contextual Info: - M € tí: f ft * t Vds or Vd g € £ fê Vg s Ta=25^ Id Pd * /CH * /CH IGSS V g s th) IDSS ft % Bg. Ciss Coss Crss ft & *typ (A) Id (A) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max) (pF) (pF) (pF) Id (A) m % Vd s (V) ínA) Vg s (V) 1R F Z 3 5 IR N