f25n06l

Abstract: F25N06 RFP2506L RFP25N06L an7254 TA9638
Contextual Info: Logic-Level Power MOSFETs RFP25N06L File Number 2044 N-Cnannel Logic Level Power Field-Effect Transistors L2FET 25 A, 50 V - 60 V rDs(on) = 0.085 O Features: N-CHANNEL ENHANCEMENT MODE • Design optim ized fo r 5 volt gate drive ■ Can be driven directly from Q-MOS,

2N6786

Contextual Info: Standard Power MOSFETs 2N6786 T j , JUNC TION TEMPERATURE fC T j, JUNCTION TEMPERATURE *C) 92GS-4412? Fig. 8 - B re a k d o w n v o lta g e vs. te m p e ra tu re . O 10 20 30 92GS-44128 Fig. 9 - N o rm a liz e d o n -re s is ta n c e vs. te m p e ra tu re .

irfp 9240

Abstract: irfp 240 IRFP p-channel irfp9240
Contextual Info: HARRIS IR F P 9 2 4 0 /P 9 2 4 1 IR FP 9242/P 9243 Avalanche Energy Rated P-Channel Power MOSFETs May 1992 Package Features T O -2 4 7 • -10A and -12A , -2 0 0 V and -15 0 V T O P VIEW • fDS ON = 0 .5 0 ft and 0.7ft • Single Pulse Avalanche Energy Rated

irf*234 n

Abstract: IRF235 sm 4205 IRF234d GE-X8
Contextual Info: IRF234, IRF235 IRF236, IRF237 21 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated May 1992 Package Features T O -2 0 4 A A • 8.1A and 6.5A, 275V - 250V B O T T O M VIEW • rD S °n = 0 -4 5 0 and 0 .6 8 ÎÎ • Single Pulse Avalanche Energy Rated

IRF254

Abstract: IRF255 IRF256 IRF257 IIRF257 IRF25
Contextual Info: Rugged Power MOSFETs IRF254, IRF255 IRF256, IRF257 File Number 2300 Avalanche-Energy-Rated N-Channel Power MOSFETs 22 A and 20 A, 275 V and 250 V rDsioni = 0.14 O and 0.17 Q n -c h a n n e l e n h a n c e m e n t m ode U Features: • Single pulse avalanche energy rated

IRFP9240R

Abstract: IFP92 IRFP9243R 9243 IRFP IRFP9240 IRFP9241 IRFP9241R IRFP9242R
Contextual Info: _ Rugged Power MOSFETs File Num ber IRFP9240R, IRFP9241R, IRFP9242R, IRFP9243R 2294 Avalanche-Energy-Rated P-Channel Power MOSFETs -10 A and -12 A, 200 V and 150 V rDston = 0.50 fi and 0.70 fi TERMINAL DIAGRAM D Features: • S ingle pulse avalanche energy rated

GSI550

Abstract: IGT7E50CS
Contextual Info: Preview Products G SI550, IGT7E50CS File N um b er 2328 Current Sensing IGT Transistors Insulated Gate Bipolar Transistors 50 A, 500 V rDs on = 0.052 fi TERMINAL DIAGRAM Features: • ■ ■ ■ ■ Lo w Vce(sat) - 1 . 5 V typ. @ 50 A U ltra -fa st tu rn -o n - 200 n s ty p ic a l

24N60D

Contextual Info: HA R R I S S E M I C O N D S E C T O R '_p ' 3 <=ì - ’S I 4305271 G03SÔMÔ H H H A S H G TA 24N 60D 1C ^ H a r r is August 1991 40E D Current Se n sin g N -C h an n e l Enhancem ent-M ode Insulated Gate Bipolar Transistor IGBT) Package Features • 24A, 600V

ICAN-6525

Abstract: 74fct373 74FCT533 rca 711
Contextual Info: HARRIS SE MI CON D SECTOR lb E D • 4302271 001M400 31 HARRIS ■ RCA ■ GE ■ ■ 7 ^ 6 - 0 7 - // CMOS Logic S E M I C O N D U C T O R HARRI S 3 I NT E RS I L C D 54 /7 4 F C T 3 7 3 , C D 54/74F C T 533 Advance Information D O - 373 533 -QO OO

Contextual Info: 2 H a r r is IRFF9220, IRFF9221 IRFF9222, IRFF9223 Avalanche Energy Rated P-Channel Power MOSFETs August 1991 Features Package T0-205A F • -2 A and -2 .5 A , -1 5 0 V and -2 0 0 V BOTTOM VIEW • t q s O N = 1 - 5 0 0 and 2 .4 0 ÎÎ GATE SOURCE • Single Pulse Avalanche Energy Rated

IRFP462

Abstract: IRFP460 G8TE of IRFP460 IHFP460
Contextual Info: Preview Products File Number IRFP460, IRFP462 2291 Avalanche-Energy-Rated N-Channel Power MOSFETs 20 A and 17 A, 500 V i"DS on = 0.27 n and 0.35 fl N-CHANNEL ENHANCEMENT MODE o Features: • S ingle pulse avalanche energy rated • SOA is pow er-dissipation lim ited

44222

Abstract: 2N6975 442-22 ic lg 631 2N6976 2N6977 2N6978 S2GS-44222
Contextual Info: Insulated-Gate Bipolar Transistors- 2N6975, 2N6976, 2N6977, 2N6978 File Num ber 2297 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 5 A, 400 V and 500 V Vceom: 2 V T«: 1 /us, 0.5 /j s N-CHANNEL ENHANCEMENT MODE

IRF9520

Abstract: IRF9523 IRF9521 IRF9522 irf9520 p channel GS 9521
Contextual Info: Rugged Power M O SFETs IRF9520, IRF9521 IRF9522, IRF9523 File Number 2 2 8 1 Avalanche-Energy-Rated P-Channel Power M OSFETs -5 A and -6 A, -60 V and -100 V rDsiom = 0.60 Cl and 0.80 Q TERMINAL DIAGRAM o Features: • Single pulse avalanche energy rated m SOA is power-dissipation limited

GSI510

Abstract: transistor C 639 W IGT5E10CS Bipolar Transistors
Contextual Info: Insulated-Gate Bipolar Transistors GSI510, IGT5E10CS File Number 2326 Current Sensing IGT Transistors Insulated Gate Bipolar Transistors 10 A, 500 V rpsion = 0.27 O TERMINAL DIAGRAM Features: m Low V'ceis«» - 2.5 V typ. @ 10 A m Ultra-fast turn-on - 100 ns typical

IRFD9123

Abstract: IRFD9120 MOSFET IRFd9120 44202 FR 9120 irfd 92QS-44168 92GS-4420Z
Contextual Info: Rugged Power MOSFETs File N u m b e r 2285 IRFD9120 IRFD9123 Avalanche-Energy-Rated P-Channel Power MOSFETs -1.0 A and -0.8 A, -60 V and -100 V rDston = 0.6 O and 0.8 Q TERMINAL DIAGRAM Features:

1RF9140

Abstract: F9142 IRF high current p-channel lts 543 pin diagram F9140 IRF 543 MOSFET
Contextual Info: H A R R I S IRF9140, IRF9141 IRF9142, IRF9143 Avalanche Energy Rated P-Channel Power MOSFETs Ja n u ary 1 994 Package Features T O -2 0 4 A A BOTTOM VIEW • -19 A and -15A , -80 V and -100V • rQS ON = 0 .2 0 0 and 0.30H DRAIN (FLANGE) SOURCE • Single Pulse Avalanche Energy Rated

f9240

Abstract: irf9240r irf 44 n rf924
Contextual Info: HARRIS IR F 9 2 40 , IR F9241 IRF9242, IRF9243 Avalanche Energy Rated P-Channel Power MOSFETs A ugust 1991 Features Package T O -2Û 4A A BOTTOM VIEW • -9A and -11A , -15 0 V and -200V • rDS ON = 0 .5 0 0 and 0 .7 ÎÎ • Single Pulse Avalanche Energy Rated

IFU422

Abstract: FU420 IFU420 IRFR421 420 Diode FR420 IFR421 IRFU N-Channel Power MOSFETs
Contextual Info: m HARRIS IRFR420/421/422 IRFU420/421/422 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Features Packages IR F U 4 2 0 /4 2 1 /4 2 2 T O -2 5 1 A A TOP VIEW • 2.2 A and 2 .5 A, 4 5 0 V and 5 0 0 V • rD S on = a i d 4 .0 n I SOURCE • Single Pulse A valanche Energy Rated

f9520

Abstract: irf9520 IRF9520 harris
Contextual Info: h a r r i s IRF9520, IRF9521 IRF9522, IRF9523 Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 19 9 4 Package F e a tu re s T 0 -2 2 0 A B • -5 A and -6 A , -8 0 V and - 1 00V TOP VIEW • rD S O N = 0 .6 f l and 0 .8 H • Single Pulse Avalanche Energy Rated

TC 9151 P

Abstract: IRFP9151
Contextual Info: IR F P 9150 IR F P 9151 S ì H A R R IS Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Package Features T O -2 4 7 • -2 5 A , -8 0 V and -1 0 0 V TOP VIEW • rD S 0 N = 0 .1 5 0 H • Single Pulse Avalanche Energy Rated SOURCE • S O A is P o w er-D issip atio n Lim ited

Contextual Info: ^ IRFD9220 IRFD9223 H a r r is Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Features Package 4 - PIN D U A L -IN -L IN E • -0 .4 5 A and -0 .6 A , -1 5 0 V and -2 0 0 V TOP VIEW • rD S O N = 1 .5 ft and 2 .4 ÎÎ • Single Pulse Avalanche Energy Rated

fp360

Contextual Info: IRFP360 IRFP362 2 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated August 1991 Package F e a tu re s T O -2 4 7 • 20A and 23A, 400V TOP VIEW • rD S °n) = 0 .2 0 0 and 0 .2 5 0 • Single Pulse Avalanche Energy Rated • SOA Is Power-Dlssipation Limited

OSKJ

Abstract: F9220 IAFF9221 IRFF9220 IRFF9221 IRFF9222 IRFF9223 IRFF9221I 92CS-43262
Contextual Info: Rugged Power MOSFETs File Number IRFF9220, IRFF9221 IRFF9222, IRFF9223 2288 Avalanche-Energy-Rated P-Channel Power MOSFETs -2 A and -2.5 A, -150 V and -200 V rDsioni = 1.5 O and 2.4 O TERMINAL DIAGRAM

rectifier diode 1-35 LA V6

Abstract: IRFF9120 IRFF9122 IRFF9123 IRFF9121 2CS-432T
Contextual Info: Rugged Power MOSFETs File N u m b e r 2287 IRFF9120, IRFF9121 IRFF9122, IRFF9123 Avalanche-Energy-Rated P-Channel Power MOSFETs -3.5 A and -4 A, -60 V, -100 V fDS on = 0.60 Q and 0.80 O TERMINAL DIAGRAM D Features: • S ingle pulse avalanche energy rated