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    IRFD9220 Search Results

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    IRFD9220 Price and Stock

    Vishay Siliconix IRFD9220

    MOSFET P-CH 200V 560MA 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD9220 Tube 2,500
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    • 10000 $2.6375
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    Bristol Electronics IRFD9220 5
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    Vishay Siliconix IRFD9220PBF

    MOSFET P-CH 200V 560MA 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD9220PBF Tube 2,500
    • 1 -
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    • 10000 $1.1125
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    ComSIT USA IRFD9220PBF 1,700
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    Vishay Intertechnologies IRFD9220PBF

    P Channel Mosfet, -200V, 560Ma Hd-1; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:560Ma; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFD9220PBF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IRFD9220PBF Bulk 2,500
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    • 10000 $1.16
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    RS IRFD9220PBF Bulk 2,500
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    • 10000 $1.42
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    Bristol Electronics IRFD9220PBF 173
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    TME IRFD9220PBF 175 1
    • 1 $2.19
    • 10 $1.02
    • 100 $0.86
    • 1000 $0.7
    • 10000 $0.7
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    Chip One Stop IRFD9220PBF Tube 80
    • 1 $0.956
    • 10 $0.953
    • 100 $0.949
    • 1000 $0.949
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    Vishay Semiconductors IRFD9220PBF

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com IRFD9220PBF 1,035
    • 1 $3.72
    • 10 $2.94
    • 100 $1.82
    • 1000 $1.25
    • 10000 $1.22
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    Harris Semiconductor IRFD9220

    TRANSISTOR,MOSFET,P-CHANNEL,200V V(BR)DSS,580MA I(D),TO-250VAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFD9220 197
    • 1 $1.6
    • 10 $1.6
    • 100 $0.8
    • 1000 $0.8
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    IRFD9220 4
    • 1 $3.3396
    • 10 $2.5047
    • 100 $2.5047
    • 1000 $2.5047
    • 10000 $2.5047
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    Find more IRFD9220 price and stock on Findchips.com

    IRFD9220 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD9220 Intersil 0.6A, 200V, 1.500 ?, P-Channel Power MOSFET Original PDF
    IRFD9220 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD9220 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 200V 560MA 4-DIP Original PDF
    IRFD9220 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD9220 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, -200V, -.56A, Pkg Style HEXDIP Scan PDF
    IRFD9220 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFD9220 International Rectifier Plastic Package HEXFETs Scan PDF
    IRFD9220 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFD9220 International Rectifier Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A) Scan PDF
    IRFD9220 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD9220 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    IRFD9220 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD9220 Unknown FET Data Book Scan PDF
    IRFD9220 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD9220 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD9220 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFD9220PBF International Rectifier HEXFET Power MOSFET Original PDF
    IRFD9220PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 200V 560MA 4-DIP Original PDF

    IRFD9220 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFD9220

    Abstract: No abstract text available
    Text: IRFD9220 Data Sheet January 2002 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET Features • 0.6A, 200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFD9220 IRFD9220 PDF

    s0918

    Abstract: IRFD9220
    Text: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) (Ω) 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • For Automatic Insertion COMPLIANT • End Stackable • P-Channel


    Original     		IRFD9220, SiHFD9220 2002/95/EC 18-Jul-08 s0918 IRFD9220 PDF

    IRFD120

    Abstract: VISHAY DIODE MARKING
    Text: PD- 95918 IRFD9220PbF • Lead-Free Document Number: 91141 10/28/04 www.vishay.com 1 IRFD9220PbF Document Number: 91141 www.vishay.com 2 IRFD9220PbF Document Number: 91141 www.vishay.com 3 IRFD9220PbF Document Number: 91141 www.vishay.com 4 IRFD9220PbF Document Number: 91141


    Original     		IRFD9220PbF 12-Mar-07 IRFD120 VISHAY DIODE MARKING PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9220, SiHFD9220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) () 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • For Automatic Insertion COMPLIANT • End Stackable


    Original     		IRFD9220, SiHFD9220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) (Ω) 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • For Automatic Insertion COMPLIANT • End Stackable • P-Channel


    Original     		IRFD9220, SiHFD9220 18-Jul-08 PDF

    IRFD120

    Abstract: No abstract text available
    Text: PD- 95918 IRFD9220PbF • Lead-Free 1 IRFD9220PbF 2 IRFD9220PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE


    Original     		IRFD9220PbF IRFD120 IRFD120 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9220 Data Sheet Title FD 20 bt A, 0V, 00 m, July 1999 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFD9220 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) () 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • For Automatic Insertion COMPLIANT • End Stackable • P-Channel


    Original     		IRFD9220, SiHFD9220 2002/95/EC 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) () 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • For Automatic Insertion COMPLIANT • End Stackable • P-Channel


    Original     		IRFD9220, SiHFD9220 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = - 10 V 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • End Stackable


    Original     		IRFD9220, SiHFD9220 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) () 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • For Automatic Insertion COMPLIANT • End Stackable • P-Channel


    Original     		IRFD9220, SiHFD9220 2002/95/EC 11-Mar-11 PDF

    AN609

    Abstract: IRFD9220
    Text: IRFD9220_RC, SiHFD9220_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRFD9220 SiHFD9220 AN609, 0426m 8968m 4501m 6212m 26-Oct-10 AN609 PDF

    diode marking s12

    Abstract: No abstract text available
    Text: IRFD9220, SiHFD9220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) () 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 COMPLIANT • End Stackable • P-Channel • Fast Switching • Ease of Paralleling


    Original     		IRFD9220, SiHFD9220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 diode marking s12 PDF

    IRFD9220

    Abstract: No abstract text available
    Text: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = - 10 V 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • End Stackable


    Original     		IRFD9220, SiHFD9220 18-Jul-08 IRFD9220 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9220, SiHFD9220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) () 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 COMPLIANT • End Stackable • P-Channel • Fast Switching • Ease of Paralleling


    Original     		IRFD9220, SiHFD9220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    IRFD9220

    Abstract: No abstract text available
    Text: IRFD9220 Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET File Number 2286.3 Features • 0.6A, 200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFD9220 IRFD9220 PDF

    Untitled

    Abstract: No abstract text available
    Text: International Rectifier • HEXFET P o w e r M O S F E T • • • • • • • DD1SD7t 3SS" INR PD'9439C IRFD9220 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel Fast Switching


    OCR Scan     		IRFD9220 -200V PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9220 S em iconductor April 1999 Data Sheet -0.6A, -200V, 1.500 Ohm, P-Channel Power MOSFET • -0.6A, -200V • rDS ON = 1 -500i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		IRFD9220 -200V, -200V -500i2 TB334 TA17502. PDF

    IRF7205

    Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY


    OCR Scan     		BSS84 BSS92 BS250 BSS83 IRF5210S T0263 IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRF7205 IRF7342 IXTH7P50 T0-220AB irfp9240 PDF

    IF-D92

    Abstract: IRFD9220 IRFD9223 VOS-10
    Text: Rugged Power M IRFD9220 IRFD9223 M File Number 0 ~ aR 2286 Avalanche-Energy-Rated P-Channel Power MOSFETs -0.45 A and -0.6 A, -150 V and -200 V rDsion = 1.5 0 and 2.4 Q TERMINAL DIAGRAM


    OCR Scan     		IRFD9220 IRFD9223 IRFD9223 92CS-43278 92CS-43279 IF-D92 VOS-10 PDF

    IRFD9220

    Abstract: 9439c 439C 1RFD9220 1rfd if39
    Text: PD-9.439C International lOR Rectifier IRFD9220 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel Fast Switching Ease of Paralleling V dss - -200V R DS on = 1 -5 Í Í


    OCR Scan     		IRFD9220 IRFD9220 9439c 439C 1RFD9220 1rfd if39 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ IRFD9220 IRFD9223 H a r r is Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Features Package 4 - PIN D U A L -IN -L IN E • -0 .4 5 A and -0 .6 A , -1 5 0 V and -2 0 0 V TOP VIEW • rD S O N = 1 .5 ft and 2 .4 ÎÎ • Single Pulse Avalanche Energy Rated


    OCR Scan     		IRFD9220 IRFD9223 IRFD9220, /RFD9223 PDF

    Untitled

    Abstract: No abstract text available
    Text: • 4302271 ODSMSTE 05? ■ HAS IRFD9220 IRFD9223 ¡3 H a r r is Avalanche Energy Rated P-Channel Power M O SFETs January 1 9 9 4 Features Package 4 - PIN D U A L -IN -L IN E • -0.45A and -0.6A, -150V and -200V TOP VIEW • rDS ON = 1-5H and 2.4CÎ • Single Pulse Avalanche Energy Rated


    OCR Scan     		IRFD9220 IRFD9223 -150V -200V 550Eti PDF

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25
    Text: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR


    OCR Scan     		1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 LM3661TL-1.25 PDF