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    IRFD120 Price and Stock

    Vishay Siliconix IRFD120

    MOSFET N-CH 100V 1.3A 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD120 Bulk
    • 1 -
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    Bristol Electronics IRFD120 95 3
    • 1 -
    • 10 $2.0475
    • 100 $1.2797
    • 1000 $1.2797
    • 10000 $1.2797
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    Quest Components IRFD120 200
    • 1 $0.63
    • 10 $0.63
    • 100 $0.42
    • 1000 $0.294
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    IRFD120 40
    • 1 $1.0435
    • 10 $0.8348
    • 100 $0.6261
    • 1000 $0.6261
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    ComSIT USA IRFD120 2,407
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    Vishay Siliconix IRFD120PBF

    MOSFET N-CH 100V 1.3A 4DIP
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    DigiKey IRFD120PBF Bulk 2,500
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    RS IRFD120PBF Bulk 2,500
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    ComSIT USA IRFD120PBF 730
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    Vishay Intertechnologies IRFD120PBF

    N Channel Mosfet, 100V, 1.3A, Hvmdip4; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.3A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFD120PBF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IRFD120PBF Bulk 475 2,500
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    RS IRFD120PBF Bulk 2 100 Weeks 1
    • 1 $0.6
    • 10 $0.51
    • 100 $0.51
    • 1000 $0.51
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    Bristol Electronics IRFD120PBF 42
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    TTI IRFD120PBF Tube 100
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    • 100 $0.547
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    TME IRFD120PBF 415 1
    • 1 $1.195
    • 10 $0.635
    • 100 $0.537
    • 1000 $0.431
    • 10000 $0.387
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    General Transistor Corp IRFD120

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com IRFD120 2,451
    • 1 $5.72
    • 10 $5.19
    • 100 $1.2
    • 1000 $1.2
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    International Rectifier IRFD120

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    Bristol Electronics IRFD120 8,027
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    IRFD120 229
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    IRFD120 214 7
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    • 10 $0.75
    • 100 $0.4875
    • 1000 $0.2812
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    Quest Components IRFD120 1,033
    • 1 $0.63
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    • 100 $0.63
    • 1000 $0.2625
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    IRFD120 492
    • 1 $1.0435
    • 10 $1.0435
    • 100 $0.5218
    • 1000 $0.4174
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    IRFD120 171
    • 1 $1
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    IRFD120 111
    • 1 $1.05
    • 10 $1.05
    • 100 $0.525
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    IRFD120 39
    • 1 $1.386
    • 10 $1.1088
    • 100 $0.8316
    • 1000 $0.8316
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    IRFD120 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD120 Fairchild Semiconductor N-Channel Power MOSFET Original PDF
    IRFD120 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRFD120 Intersil 1.3A, 100V, 0.300 ?, N-Channel Power MOSFET Original PDF
    IRFD120 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD120 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 1.3A 4-DIP Original PDF
    IRFD120 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD120 Harris Semiconductor (IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs Scan PDF
    IRFD120 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD120 International Rectifier Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A) Scan PDF
    IRFD120 International Rectifier Plastic Package HEXFETs Scan PDF
    IRFD120 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFD120 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFD120 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFD120 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 100V, 1.3A, Pkg style HEXDIP Scan PDF
    IRFD120 Motorola European Master Selection Guide 1986 Scan PDF
    IRFD120 Motorola (IRFD123) TMOS Field Effect Transistor / Dual In-Line Package Scan PDF
    IRFD120 Motorola Switchmode Datasheet Scan PDF
    IRFD120 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD120 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFD120 Unknown FET Data Book Scan PDF

    IRFD120 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Power MOSFET in a HEXDIP package

    Abstract: TA17401 IRFD120 TB334
    Text: IRFD120 Data Sheet July 1999 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET • 1.3A, 100V • rDS ON = 0.300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    Original
    IRFD120 TB334 TA17401. Power MOSFET in a HEXDIP package TA17401 IRFD120 TB334 PDF

    IRFD120PBF

    Abstract: IRFD120
    Text: PD- 95928 IRFD120PbF • Lead-Free www.irf.com 1 10/27/04 IRFD120PbF 2 www.irf.com IRFD120PbF www.irf.com 3 IRFD120PbF 4 www.irf.com IRFD120PbF www.irf.com 5 IRFD120PbF 6 www.irf.com IRFD120PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations


    Original
    IRFD120PbF IRFD120 IRFD120PBF IRFD120 PDF

    IRFD120

    Abstract: No abstract text available
    Text: PD- 95927 IRFD110PbF • Lead-Free 1 IRFD110PbF 2 IRFD110PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE


    Original
    IRFD110PbF IRFD120 IRFD120 PDF

    IRFD120

    Abstract: No abstract text available
    Text: IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original
    IRFD120, SiHFD120 18-Jul-08 IRFD120 PDF

    F7101

    Abstract: international rectifier code 807D1 IRF530S IRF7101 IRF7807D1 IRFD120 MS-012AA 8024 digit 263A
    Text: HD-1 HEXDIP THIS IS AN IRFD120 INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFD120 XXXX LAST FOUR DIGITS OF ASSEMBLY LOT CODE DATE CODE (YYWW) YY = YEAR WW = WEEK D 2 Pak (TO-263A) THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L"


    Original
    IRFD120 O-263A) IRF530S MS-012AA) IRF7101 F7101 IRF7807D1 807D1 F7101 international rectifier code 807D1 IRF7101 IRF7807D1 IRFD120 MS-012AA 8024 digit 263A PDF

    IRFD120

    Abstract: HexDIP Package HEXDIP
    Text: PD- 95920 IRFD014PbF • Lead-Free 1 IRFD014PbF 2 IRFD014PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE


    Original
    IRFD014PbF IRFD120 IRFD120 HexDIP Package HEXDIP PDF

    IRFD120

    Abstract: No abstract text available
    Text: PD- 95918 IRFD9220PbF • Lead-Free 1 IRFD9220PbF 2 IRFD9220PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE


    Original
    IRFD9220PbF IRFD120 IRFD120 PDF

    IRFD120

    Abstract: No abstract text available
    Text: PD- 95919 IRFD9120PbF • Lead-Free 1 IRFD9120PbF 2 IRFD9120PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE


    Original
    IRFD9120PbF IRFD120 IRFD120 PDF

    irfd120

    Abstract: No abstract text available
    Text: IRFD120 Data Sheet Title FD 0 bt 3A, 0V, 00 m, an- 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are


    Original
    IRFD120 TB334 irfd120 PDF

    IRFD120

    Abstract: No abstract text available
    Text: PD- 95928 IRFD120PbF • Lead-Free Document Number: 91128 10/27/04 www.vishay.com 1 IRFD120PbF Document Number: 91128 www.vishay.com 2 IRFD120PbF Document Number: 91128 www.vishay.com 3 IRFD120PbF Document Number: 91128 www.vishay.com 4 IRFD120PbF Document Number: 91128


    Original
    IRFD120PbF 12-Mar-07 IRFD120 PDF

    IRFD120

    Abstract: No abstract text available
    Text: IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original
    IRFD120, SiHFD120 2002/95/EC 11-Mar-11 IRFD120 PDF

    AN609

    Abstract: IRFD120
    Text: IRFD120_RC, SiHFD120_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    IRFD120 SiHFD120 AN609, 3009m 0418u 6349m 9124m 25-Oct-10 AN609 PDF

    irfd120

    Abstract: No abstract text available
    Text: IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original
    IRFD120, SiHFD120 12-Mar-07 irfd120 PDF

    irfd120

    Abstract: No abstract text available
    Text: IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original
    IRFD120, SiHFD120 2002/95/EC 18-Jul-08 irfd120 PDF

    IRFD120

    Abstract: IRFD024PBF
    Text: PD- 95933A IRFD024PbF • Lead-Free ± 20 1 IRFD024PbF 2 IRFD024PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE


    Original
    5933A IRFD024PbF IRFD120 IRFD120 IRFD024PBF PDF

    IRFD120

    Abstract: No abstract text available
    Text: IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable


    Original
    IRFD120, SiHFD120 2002/95/EC 18-Jul-08 IRFD120 PDF

    385H

    Abstract: IRFD120 dual mosfet marking 506
    Text: International S Rectifier PD-9.385H IRFD120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling VDSS= 100V R DS on =


    OCR Scan
    IRFD120 385H IRFD120 dual mosfet marking 506 PDF

    IRFD120

    Abstract: irfd123 IRF0123
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD120 TMOS Field Effect Transistor Dual In-Line Package IR F D 1 2 3 N-Channel Enhancement Mode TM O S FET TR A N S IS TO R S FE T DIP Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline


    OCR Scan
    IRFD120 IRFD123 IRFD123 IRF0123 PDF

    1RFD123

    Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
    Text: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*


    OCR Scan
    IRFD120/121/122/123 12OR/121R/122R/123R IRFD120, IRFD121, IRFD122, IRFD123 IRFD120R, IRFD121R, IRFD122R, IRFD123R 1RFD123 IRFD 123R fd120 IRFD 120 IRFD 123 PDF

    1RFD120

    Abstract: TRANSISTOR IRFD120
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD120 IRFD123 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode • Ideal for Peripheral Control Applications • Intermediate 1 Watt Power Capability • Standard DIP Outline TMOS FET TRANSISTORS


    OCR Scan
    IRFD120 IRFD123 1RFD120 1RFD120 TRANSISTOR IRFD120 PDF

    IRFD123

    Abstract: D120 IRFD120 if1070 IRFD 120 IRFD 123
    Text: Tem ic IRFD120/123 Siliconix N-Channel Enhancement-Mode Transistors Product Summary Part Num ber V BR DSS 00 rDS(on) (Ö ) I d (A) IRFD120 100 0.3 1.3 IRFD123 60 0.4 1.1 D D Top View 6 s N-Channel M OSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)


    OCR Scan
    IRFD120/123 IRFD120 IRFD123 IK1D123 -55DC P-36852â 25C--7// D120 if1070 IRFD 120 IRFD 123 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 0 5 5 4 5 2 0015GB2 1Ô4 » I N R International SËr]Rectifier IRFD120 HEXFET Power MOSFET • • • • • • • PD-9.385H INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175°C Operating Temperature


    OCR Scan
    0015GB2 IRFD120 5S452 QG15027 PDF

    TRANSISTOR IRFD120

    Abstract: D82CL2 IRFD120
    Text: F 5g M l ^ o [ M Ï S I F 1 IRFD120,121 P82CL2.K2 T 1.3 AMPERES 100,60 VOLTS RPS(ON = 0-3 n FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan
    IRFD120 D82CL2 00A//US, IRFD120/D82CL2 IRFD12VD82CK2 TRANSISTOR IRFD120 PDF

    irfd123

    Abstract: 2501a IRFD120R IRFD121R IRFD122R IRFD123R IRF012
    Text: Rugged Pow er M O S F E T s_ File Number 2036 IRFD120R, IRFD121R, IRFD122R, IRFD123R Avalanche Energy Rated N-Channel Power MOSFETs 1.3A and 1.1A, 60V-100V ros on = 0.300 and 0.400 N -C H A N N E L E N H A N C E M E N T M O D E Features:


    OCR Scan
    IRFD120R, IRFD121R, IRFD122R, IRFD123R 0V-100V IRFD122R IRFD123R irfd123 2501a IRFD120R IRFD121R IRF012 PDF