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    Harris Semiconductor IFU420

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    IFU420 Datasheets Context Search

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    ifr420

    Abstract: IFU420 IFR-420 irfr420
    Text: IRFR420, IRFU420 Data Sheet 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		IRFR420, IRFU420 TA17405. TB334 IRFR420 IRFR420B IRFR420TM O-252 ifr420 IFU420 IFR-420 PDF

    ifr420

    Abstract: IFU420 IFR-420 irfu420 IRFR420 IRFR420T TB334
    Text: IRFR420, IRFU420 Data Sheet 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		IRFR420, IRFU420 TA17405. ifr420 IFU420 IFR-420 irfu420 IRFR420 IRFR420T TB334 PDF