Contextual Info: IRF230R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D)6 @Temp (øC)100 IDM Max (@25øC Amb)36 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ

IRF230R

Abstract: IRF231R IRF232R IRF233R
Contextual Info: _Rugged Power MOSFETs File N u m b er IRF230R, IRF231R, IRF232R, IRF233R 1999 Avalanche Energy Rated N-Channel Power M OSFETs 8.0A and 9.0A, 150V-200V rDs on = 0 .4 0 and 0.6CÌ N-CHANNEL ENHANCEMENT MODE D Features: • Single pulse avalanche energy rated

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

Contextual Info: 43D2271 2 J H 0053^03 A R R SIS • HAS I S IR F 2 3 0 /2 3 1 /2 3 2 /2 3 3 IR F 2 3 0 R /2 3 1 R /2 3 2 R /2 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A ug ust 1 9 91 Features Package T O -2 0 4 A A • 8 .0 A and 9.0 A , 1 5 0 V - 2 0 0 V • rD S °n =

RF232R

Abstract: IRF23 IRF N-Channel Power MOSFETs F233
Contextual Info: 2 H A R R I S »RF230/231/232/233 IR F230R /231R/232R/233R N-Channel Power MOSFETs Avalanche Energy Rated* A ugust 1991 Features Package T O -2 0 4 A A • 8.0A and 9.0A, 150V - 200V • fD S (°n = 0.4S1 and 0 .6 0 • Single Pulse Avalanche Energy Rated*